Panasonic 2SA0886 User Manual
查询2SA0886供应商
Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1847
■ Features
• Output of 4 W can be obtained by a complementary pair with
2SC1847
• TO-126B package which requires no insulation plate for installation to the heat sink
φ 3.16
±0.1
8.0
+0.5
–0.1
±0.3
3.8
±0.1
1.9
±0.5
11.0
±1.0
16.0
Unit: mm
3.2
±0.2
±0.1
3.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
P
C
j
−55 to +150 °C
stg
−50 V
−40 V
−5V
−1.5 A
−3A
1.2 W
150 °C
0.75
±0.1
4.6
±0.2
123
0.5
±0.1
0.5
2.3
±0.2
TO-126B-A1 Package
±0.1
1: Emitter
2: Collector
3: Base
1.76
±0.1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
CBOIC
CEOIC
I
CBO
I
CEO
I
EBO
h
FE
CE(sat)IC
BE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
h
FE1
80 to 160 120 to 220
= −1 mA, IE = 0 −50 V
= −2 mA, IB = 0 −40 V
VCB = −20 V, IE = 0 −1 µA
VCE = −10 V, IB = 0 −100 µA
VEB = −5 V, IC = 0 −10 µA
VCE = −5 V, IC = −1 A 80 220
= −1.5 A, IB = − 0.15 A −1.0 V
= −2 A, IB = − 0.2 A −1.5 V
VCB = −5 V, IE = 0.5 A, f = 200 MHz 150 MHz
T
VCB = −20 V, IE = 0, f = 1 MHz 45 pF
ob
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003 SJD00003BED
1
2SA0886
PC T
1.6
)
W
(
C
1.2
0.8
0.4
a
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
(V)
BE(sat)
–0.1
–10
BE(sat)
–1
TC=–25˚C
C
100˚C
25˚C
Base-emitter saturation voltage V
–0.01
–0.01 –1–0.1
Collector current IC (A)
IC/IB=10
IC V
hFE I
TC=100˚C
–25˚C
CE
C
TC=25˚C
IB=–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
VCE=–5V
25˚C
–5mA
(V)
–10
CE(sat)
–1
–0.1
Collector-emitter saturation voltage V
–0.01
–0.01
240
200
(MHz)
160
T
120
80
Transition frequency f
40
0
0.01 0.1 1 10
–4.0
–3.5
–3.0
(A)
C
–2.5
–2.0
–1.5
Collector current I
–1.0
–0.5
0
)
0 –10–2 –4 –8–6
Collector-emitter voltage VCE (V)
1000
FE
100
10
Forward current transfer ratio h
1
–0.01 –1–0.1
Collector current IC (A)
V
I
CE(sat)
TC=100˚C
25˚C
–25˚C
–0.1 –1
Collector current IC (A)
fT I
E
Emitter current IE (A)
C
IC/IB=10
VCB=–5V
f=200MHz
T
=25˚C
C
Cob V
140
(pF)
ob
C
120
100
80
60
40
20
Collector output capacitance
(Common base, input open circuited)
0
–1 –10 –100
CB
Collector-base voltage VCB (V)
2
IE=0
f=1MHz
T
=25˚C
C
V
R
–60
–50
(V)
CER
V
–40
–30
–20
–10
Collector-emitter voltage
(Resistor between B and E)
0
0.001 0.01 0.1 1 10
CER
BE
Base-emitter resistance RBE (kΩ)
SJD00003BED
TC=25˚C
)
a
(T
CEO
I
= 25°C)
a
(T
CEO
I
1000
100
10
1
I
T
CEO
0 12020 10040 8060
Ambient temperature Ta (°C)
a
VCE=–12V
Loading...