Panasonic 2SA0879 User Manual

Transistors

2SA0879 (2SA879)

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SC1573

■ Features

• High collector-emitter voltage (Base open) V

CEO

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

−250 V

−200 V

−5V

−70 mA

−100 mA

1W

150 °C

0.7

±0.1

0.45

5.9

132

+0.2
–0.1

±0.2

(1.27)(1.27)

2.54

+0.3

0.7

–0.2

±0.2

8.6

±0.5

13.5

(3.2)

±0.15

0.45

TO-92L-A1 Package

4.9

±0.2

+0.2
–0.1

1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51

Unit: mm

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

CEOIC

EBOIE

h

FE

CE(sat)IC

T

ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

60 to 150 100 to 220

= −100 µA, IB = 0 −200 V

= −1 µA, IC = 0 −5V

VCE = −10 V, IC = −5 mA 60 220 

= −50 mA, IB = −5 mA −1.5 V

VCB = −10 V, IE = 10 mA, f = 200 MHz 50 80 MHz

VCB = −10 V, IE = 0, f = 1 MHz 5 10 pF

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002 SJC00006BED

1

2SA0879

1.2

)

1.0

W
(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (°C

IB  V

−2.4

−2.0

)

−1.6

mA
(

B

−1.2

PC  T

a

BE

VCE = −10 V
T

a

= 25°C

IC  V

IC  V

25°C

−25°C

CE

IB = −2 mA

−1.8 mA

−1.6 mA

−1.4 mA

BE

VCE = −10 V

Ta = 25°C

−1.2 mA

−1.0 mA

− 0.8 mA

− 0.6 mA

− 0.4 mA

− 0.2 mA

)

−120

−100

)

mA

(

−80

C

−60

−40

Collector current I

−20

0

)

0 −10−8−2 −6−4

Collector-emitter voltage VCE (V

−120

−100

Ta = 75°C

)

mA
(

−80

C

−60

−120

−100

)

mA
(

−80

C

−60

−40

Collector current I

−20

0

0 −2.4−2.0−1.6− 0.4 −1.2− 0.8

)

−100

V
(

CE(sat)

−10

−1

IC  I

B

VCE = −10 V
T

Base current IB (mA

V

 I

CE(sat)

C

IC / IB = 10

= 25°C

a

)

− 0.8

Base current I

− 0.4

0

0 −1.2−1.0− 0.8− 0.2 − 0.6− 0.4

Base-emitter voltage VBE (V

hFE  I

300

250

FE

200

150

100

Forward current transfer ratio h

50

0

− 0.1 −1 −10 −100

Ta = 75°C

C

VCE = −10 V

25°C

−25°C

Collector current IC (mA

25°C

−25°C

Ta = 75°C

CB

f = 1 MHz
I

E

T

a

)

= 0

= 25°C

−40

Collector current I

−20

0

0 −2.0−1.6− 0.4 −1.2− 0.8

)

Base-emitter voltage VBE (V

160

140

)

120

MHz

(

T

100

80

60

40

fT  I

E

)

VCB = −10 V
f = 100 MHz

= 25°C

T

a

− 0.1

− 0.01

Collector to emitter saturation voltage V

− 0.1 −1 −10 −100

Collector current IC (mA

Cob  V

16

(pF)

14

ob

C

12

10

8

6

4

Transition frequency f

20

0

0.1 1 10 100

)

Emitter current IE (mA

)

2

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

Collector-base voltage VCB (V

)

2

SJC00006BED