Panasonic 2SA0879 User Manual

Transistors

2SA0879 (2SA879)

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SC1573

■ Features

• High collector-emitter voltage (Base open) VCEO

■ Absolute Maximum Ratings Ta = 25°C

Parameter	Symbol	Rating	Unit
Collector-base voltage (Emitter open)	VCBO	−250	V
Collector-emitter voltage (Base open)	VCEO	−200	V
Emitter-base voltage (Collector open)	VEBO	−5	V
Collector current	IC	−70	mA
Peak collector current	ICP	−100	mA
Collector power dissipation	PC	1	W
Junction temperature	Tj	150	°C
Storage temperature	Tstg	−55 to +150	°C

Unit: mm

5.9±0.2						4.9±0.2
						±0.2
						8.6
0.7±0.1
						+0.3 –0.2
						0.7
						±0.5
						13.5

	+0.2				0.45–0.1+0.2
	0.45–0.1
	(1.27)		(1.27)		1 : Emitter
	1	2	3	(3.2)	2 : Collector
					3 : Base
			2.54±0.15		EIAJ : SC-51
					TO-92L-A1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-emitter voltage (Base open)	VCEO	IC = −100 µA, IB = 0	−200			V
Emitter-base voltage (Collector open)	VEBO	IE = −1 µA, IC = 0	−5			V
Forward current transfer ratio *	hFE	VCE = −10 V, IC = −5 mA	60		220
Collector-emitter saturation voltage	VCE(sat)	IC = −50 mA, IB = −5 mA			−1.5	V
Transition frequency	fT	VCB = −10 V, IE = 10 mA, f = 200 MHz	50	80		MHz
Collector output capacitance	Cob	VCB = −10 V, IE = 0, f = 1 MHz		5	10	pF
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank	Q	R
hFE	60 to 150	100 to 220

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002

SJC00006BED

1

2SA0879

PC Ta

IC VCE

1.2

−120

Ta = 25°C

)

−100

IB = −2 mA

W

1.0

−1.8 mA

(

C

)

−1.6 mA

P

mA

0.2

−20

−1.4 mA

powerCollectordissipation

Collectorcurrent I

−1.2 mA

0.8

(

−80

C

−1.0 mA

0.6

−60

− 0.8 mA

− 0.6 mA

0.4

−40

− 0.4 mA

− 0.2 mA

0

20 40 60 80 100

120

140

160

0

−2

−4

−6

−8

−10

0

0

Ambient temperature

T

a

(°C)

Collector-emitter voltage V

(V)

CE

IB VBE

IC VBE

−2.4

VCE = −10 V

−120

VCE = −10 V

Ta

= 25°C

25°C

−2.0

−100

Ta = 75°C

−25°C

)

)

mA

mA

−1.6

(

−80

(

C

B

I

currentCollector

currentBaseI

−1.2

−60

− 0.8

−40

− 0.4

−20

0

− 0.2 − 0.4 − 0.6

− 0.8

−1.0

−1.2

0

− 0.4

− 0.8

−1.2

−1.6

−2.0

0

0

Base-emitter voltage

VBE (V)

Base-emitter voltage

VBE (V)

hFE IC

fT IE

300

VCE = −10 V

160

VCB = −10 V

250

140

f = 100 MHz

FE

)

Ta = 25°C

h

MHz

120

ratio

200

T

transfercurrentForward

(

frequencyTransitionf

100

Ta = 75°C

150

25°C

80

100

−25°C

60

40

50

20

0

−1

−10

−100

0

1

10

100

− 0.1

0.1

Collector current

IC (mA)

Emitter current IE

(mA)

IC IB

−120

VCE = −10 V Ta = 25°C

−100

)

mA

−80

(

C

I

current

−60

Collector

−40

−20

0

− 0.4 − 0.8 −1.2

−1.6 −2.0

−2.4

0

Base current IB (mA)

VCE(sat) IC

)

−100

V

IC / IB = 10

(

CE(sat)

V

−10

voltage

saturation

−1

emitter

25

°C

Ta = 75°C

− 0.1

Collector to

−

25°C

− 0.01

−1

−10

−100

− 0.1

Collector current IC (mA)

Cob VCB

(pF)

16

f = 1 MHz

ob

14

IE = 0

C

Ta = 25°C

circuited)

10

capacitanceoutputCollector openinputbase,(Common

12

8

6

4

2

0−

1

−10

−100

Collector-base voltage VCB (V)

2	SJC00006BED