Panasonic 2SA0838 Datasheet

Transistor

2SA838

Silicon PNP epitaxial planer type

For high-frequency amplification
Complementary to 2SC1359

Features

■

●

High transition frequency fT.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

–30
–20

–5
–30
250
150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

5.0±0.2 4.0±0.2

5.1±0.213.5±0.5

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

0.45

2.3±0.2

+0.2
–0.1

Unit: mm

1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance

Symbol

I

CBO

I

CEO

I

EBO

h

FE

V

CE(sat)

V

BE

f

T

NF
Z

rb

Common emitter reverse transfer

C

capacitance

*

hFE Rank classification

re

Rank B C

h

FE

70 ~ 140 110 ~ 220

Conditions

VCB = –10V, IE = 0

min

typ

max

– 0.1

Unit

µA

VCE = –20V, IB = 0
VEB = –5V, IC = 0

*

VCE = –10V, IC = –1mA
IC = –10mA, IB = –1mA
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 1mA, f = 5MHz
VCE = –10V, IC = –1mA, f = 2MHz

70

150

– 0.1
– 0.7

300

2.8
22

–100

–10
220

4.0
50

µA

V
V

MHz

dB

Ω

VCE = –10V, IC = –1mA,

1.2

2.0

pF

f = 10.7MHz

1

Transistor 2SA838

PC—Ta IC—V

500

)

450

mW

(

400

C

350

300

250

200

150

100

50

Collector power dissipation P

0

0 20016040 12080

Ambient temperature Ta (˚C

–120

FE

–100

hFE—I

Ta=75˚C

C

VCE=–10V

CE

)

–30

–25

)
mA

(

–20

C

–15

–10

Collector current I

–5

0

0 –10–8–2 –6–4

)

Collector to emitter voltage VCE (V

Cob—V

6

)
pF

(

5

ob

CB

Ta=25˚C

IB=–250µA

–200µA

–150µA

–100µA

–50µA

f=1MHz
I

=0

E

Ta=25˚C

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.1 –1 –10 –100– 0.3 –3 –30

)

)

5

pF

(

re

4

V

CE(sat)—IC

IC/IB=10

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Cre—V

CE

IC=–1mA
f=10.7MHz
Ta=25˚C

)

–80

–60

–40

–20

Forward current transfer ratio h

0

– 0.1 –1 –10 –100– 0.3 –3 –30

25˚C

–25˚C

Collector current IC (mA

fT—I

E

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

VCB=–10V
Ta=25˚C

4

3

3

2

2

1

1

Collector output capacitance C

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector to base voltage VCB (V

PG — I

24

20

C

VCE=–10V
f=100MHz
Ta=25˚C

)
dB

(

16

12

8

Power gain PG

4

Common emitter reverse transfer capacitance C

0

–1 –3 –10 –30 –100

)

Collector to emitter voltage VCE (V

)
dB

(

NF — I

5

4

3

2

E

VCB=–10V
f=100MHz
Ta=25˚C

Noise figure NF

1

)

0

0.1 1 10 1000.3 3 30

Emitter current IE (mA

2

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector current IC (mA

)

0

0.1 0.3 1 3 10

Emitter current IE (mA

)