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查询2SA0794供应商
Power Transistors
2SA0794 (2SA794), 2SA0794A (2SA794A)
Silicon PNP epitaxial planar type
For low-frequency output driver
Complementary to 2SC1567, 2SC1567A
■ Features
• High collector-emitter voltage (Base open) V
• Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
• TO-126B package which requires no insulation plate for installation to the heat sink
CEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SA0794 V
2SA0794A −120
2SA0794 V
2SA0794A −120
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
−100 V
−100 V
−5V
− 0.5 A
−1A
1.2 W
150 °C
−55 to +150 °C
φ 3.16
±0.1
0.75
+0.5
8.0
–0.1
±0.1
4.6
±0.2
123
±0.5
±0.3
11.0
3.8
±0.1
1.9
±1.0
16.0
0.5
±0.1
0.5
2.3
±0.2
TO-126B-A1 Package
Unit: mm
±0.1
1: Emitter
2: Collector
3: Base
3.2
1.76
±0.2
±0.1
3.05
±0.1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Forward current transfer ratio h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
2SA0794 V
CEOIC
2SA0794A −120
EBOIE
FE1
h
FE2
CE(sat)IC
BE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
h
FE1
Publication date: February 2003 SJD00001BED
90 to 155 130 to 220
= −100 µA, IB = 0 −100 V
= −1 µA, IC = 0 −5V
*
VCE = −10 V, IC = −150 mA 90 220
VCE = −5 V, IC = −500 mA 50 100
= −500 mA, IB = −50 mA − 0.2 − 0.4 V
= −500 mA, IB = −50 mA − 0.85 −1.20 V
VCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz
T
VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF
ob
Note) The part numbers in the parenthesis show conventional part number.
1
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2SA0794, 2SA0794A
PC T
1.6
)
W
(
C
1.2
0.8
0.4
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
IC V
− 0.6
VCE = −10 V
− 0.5
(A)
− 0.4
C
− 0.3
− 0.2
Collector current I
− 0.1
0
0 −1.0− 0.8− 0.6− 0.4− 0.2
Ta = 125°C
75°C
Base-emitter voltage VBE (V)
BE
a
−1.2
−1.0
(A)
− 0.8
C
− 0.6
− 0.4
Collector current I
− 0.2
0
0 −12−2 −10−4 −8−6
)
Collector-emitter voltage VCE (V)
(V)
−25°C
CE(sat)
−1
− 0.1
Collector-emitter saturation voltage V
− 0.01
− 0.01 − 0.1 −1
IC V
−16 mA
−14 mA
V
CE(sat)
25°C
CE
−18 mA
I
TC = 100°C
TC = 25°C
IB = −20 mA
−12 mA
−10 mA
−8 mA
−6 mA
−4 mA
−2 mA
C
IC / IB = 10
−25°C
−1.2
−1.0
(A)
− 0.8
C
− 0.6
− 0.4
Collector current I
− 0.2
0
0 −4 −8 −12−2 −6 −14−10
(V)
−1
BE(sat)
− 0.1
Base-emitter saturation voltage V
− 0.01
− 0.01
Collector current IC (A)
IC I
B
VCE = −10 V
T
= 25°C
C
Base current IB (mA)
V
I
T
25°C
BE(sat)
= −25°C
C
C
IC / I
100°C
− 0.1 −1
Collector current IC (A)
= 10
B
hFE I
C
FE
1
000
T
= 100°C
C
25°C
100
−25°C
Forward current transfer ratio h
10
− 0.01 − 0.1 −1
Collector current IC (A)
2
V
CE
= −10 V
fT I
200
VCB = −10 V
f = 200 MHz
= 25°C
T
C
160
(MHz)
T
120
80
40
Transition frequency f
0
1 10 100
E
Emitter current IE (mA)
SJD00001BED
Cob V
50
(pF)
ob
C
40
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
−1 −10 −100
CB
Collector-base voltage VCB (V)
IE = 0
f = 1 MHz
= 25°C
T
C