Panasonic 2SA0794, 2SA0794A User Manual

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Power Transistors

2SA0794 (2SA794), 2SA0794A (2SA794A)

Silicon PNP epitaxial planar type

For low-frequency output driver

Complementary to 2SC1567, 2SC1567A

■ Features

• High collector-emitter voltage (Base open) V

• Optimum for the driver stage of low-frequency and 40 W to 100 W

output amplifier

• TO-126B package which requires no insulation plate for installa­tion to the heat sink

CEO

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

2SA0794 V

2SA0794A −120

2SA0794 V

2SA0794A −120

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

−100 V

−100 V

−5V

− 0.5 A

−1A

1.2 W

150 °C

−55 to +150 °C

φ 3.16

±0.1

0.75

+0.5

8.0

–0.1

±0.1

4.6

±0.2

123

±0.5

±0.3

11.0

3.8

±0.1

1.9

±1.0

16.0

0.5

±0.1

0.5

2.3

±0.2

TO-126B-A1 Package

Unit: mm

±0.1

1: Emitter
2: Collector
3: Base

3.2

1.76

±0.2

±0.1

3.05

±0.1

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Forward current transfer ratio h

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

2SA0794 V

CEOIC

2SA0794A −120

EBOIE

FE1

h

FE2

CE(sat)IC

BE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE1

Publication date: February 2003 SJD00001BED

90 to 155 130 to 220

= −100 µA, IB = 0 −100 V

= −1 µA, IC = 0 −5V

*

VCE = −10 V, IC = −150 mA 90 220 

VCE = −5 V, IC = −500 mA 50 100

= −500 mA, IB = −50 mA − 0.2 − 0.4 V

= −500 mA, IB = −50 mA − 0.85 −1.20 V

VCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz

T

VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF

ob

Note) The part numbers in the parenthesis show conventional part number.

1

2SA0794, 2SA0794A

PC  T

1.6

)
W

(

C

1.2

0.8

0.4

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

IC  V

− 0.6
VCE = −10 V

− 0.5

(A)

− 0.4

C

− 0.3

− 0.2

Collector current I

− 0.1

0

0 −1.0− 0.8− 0.6− 0.4− 0.2

Ta = 125°C

75°C

Base-emitter voltage VBE (V)

BE

a

−1.2

−1.0

(A)

− 0.8

C

− 0.6

− 0.4

Collector current I

− 0.2

0

0 −12−2 −10−4 −8−6

)

Collector-emitter voltage VCE (V)

(V)

−25°C

CE(sat)

−1

− 0.1

Collector-emitter saturation voltage V

− 0.01

− 0.01 − 0.1 −1

IC  V

−16 mA

−14 mA

V

CE(sat)

25°C

CE

−18 mA

 I

TC = 100°C

TC = 25°C

IB = −20 mA

−12 mA

−10 mA

−8 mA

−6 mA

−4 mA

−2 mA

C

IC / IB = 10

−25°C

−1.2

−1.0

(A)

− 0.8

C

− 0.6

− 0.4

Collector current I

− 0.2

0

0 −4 −8 −12−2 −6 −14−10

(V)

−1

BE(sat)

− 0.1

Base-emitter saturation voltage V

− 0.01

− 0.01

Collector current IC (A)

IC  I

B

VCE = −10 V
T

= 25°C

C

Base current IB (mA)

V

 I

T

25°C

BE(sat)

= −25°C

C

C

IC / I

100°C

− 0.1 −1

Collector current IC (A)

= 10

B

hFE  I

C

FE

1

000

T

= 100°C

C

25°C

100

−25°C

Forward current transfer ratio h

10

− 0.01 − 0.1 −1

Collector current IC (A)

2

V

CE

= −10 V

fT  I

200

VCB = −10 V
f = 200 MHz

= 25°C

T

C

160

(MHz)

T

120

80

40

Transition frequency f

0

1 10 100

E

Emitter current IE (mA)

SJD00001BED

Cob  V

50

(pF)

ob

C

40

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

CB

Collector-base voltage VCB (V)

IE = 0
f = 1 MHz

= 25°C

T

C