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查询2SA0777供应商
Transistors
2SA0777 (2SA777)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1509
■ Features
• High collector-emitter voltage (Base open) V
• Optimum for the driver stage of a low-frequency and 25 W to 30 W
output amplifier.
CEO
■ Absolute Maximum Ratings Ta = 25°C
0.7
±0.1
5.9
±0.2
+0.3
±0.2
8.6
–0.2
0.7
±0.5
13.5
4.9
Unit: mm
±0.2
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
−80 V
−80 V
−5V
− 0.5 A
−1A
1W
150 °C
0.45
+0.2
–0.1
132
(1.27)(1.27)
2.54
+0.2
0.45
–0.1
(3.2)
±0.15
TO-92L-A1 Package
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
1
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
CBOIC
CEOIC
EBOIE
I
CBO
h
FE1
h
FE2
CE(sat)IC
BE(sat)IC
T
ob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Palse measurement
2: Rank classification
*
Rank Q R
h
FE1
90 to 155 130 to 220
= −10 µA, IE = 0 −80 V
= −100 µA, IB = 0 −80 V
= −1 µA, IC = 0 −5V
VCB = −20 V, IE = 0 − 0.1 µA
2
*
VCE = −10 V, IC = −150 mA 90 220
VCE = −5 V, IC = −500 mA 50 100
= −500 mA, IB = −50 mA − 0.2 − 0.4 V
= −500 mA, IB = −50 mA − 0.85 −1.2 V
VCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz
VCB = −10 V, IE = 0, f = 1 MHz 11 20 pF
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002 SJC00004BED
1
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2SA0777
PC T
1.2
)
1.0
W
(
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
a
Ambient temperature Ta (°C
V
I
−10
)
V
(
CE(sat)
−1
− 0.1
− 0.01
Collector-emitter saturation voltage V
− 0.001
−1 −10 −100
CE(sat)
25°C
C
IC / IB = 10
Ta = 75°C
−25°C
Collector current IC (mA
IC V
BE(sat)
Ta = −25°C
CE
IB = −10 mA
I
C
IC / IB = 10
25°C
75°C
Ta = 25°C
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
−1.2
−1.0
)
A
(
− 0.8
C
− 0.6
− 0.4
Collector current I
− 0.2
0
0 −10−8−2 −6−4
)
300
250
FE
200
150
100
Forward current transfer ratio h
50
−1.2
−1.0
)
A
(
− 0.8
C
− 0.6
− 0.4
Collector current I
− 0.2
0
0 −10−8−2 −6−4
)
Collector-emitter voltage VCE (V
V
−100
)
V
(
BE(sat)
−10
−1
− 0.1
IC I
B
VCE = −10 V
= 25°C
T
a
Base current IB (mA
hFE I
C
VCE = −10 V
Ta = 75°C
25°C
−25°C
)
Base-emitter saturation voltage V
−1 000
)
− 0.01
−1 −10 −100
Collector current IC (mA
−1 000
)
0
−1 −10 −100
Collector current IC (mA
−1 000
)
fT I
200
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
0
1 10 100
Emitter current IE (mA
2
E
VCB = −10 V
= 25°C
T
a
(pF)
ob
C
Cob V
50
40
CB
IE = 0
f = 1 MHz
= 25°C
T
a
4
10
3
10
VCB = −20 V
I
CBO
T
a
)
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
−1 −10 −100
)
Collector-base voltage VCB (V
)
a
T
(
= 25°C
2
a
10
T
(
CBO
I
CBO
I
10
1
)
0 18060 12040 100 16014020 80
Ambient temperature Ta (°C
)
SJC00004BED