Panasonic 2SA0777 Technical data

查询2SA0777供应商

Transistors

2SA0777 (2SA777)

Silicon PNP epitaxial planar type

For low-frequency driver amplification

Complementary to 2SC1509

■ Features

• High collector-emitter voltage (Base open) V

• Optimum for the driver stage of a low-frequency and 25 W to 30 W

output amplifier.

CEO

■ Absolute Maximum Ratings Ta = 25°C

0.7

±0.1

5.9

±0.2

+0.3

±0.2

8.6

–0.2

0.7

±0.5

13.5

4.9

Unit: mm

±0.2

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

−80 V

−80 V

−5V

− 0.5 A

−1A

1W

150 °C

0.45

+0.2
–0.1

132

(1.27)(1.27)

2.54

+0.2

0.45

–0.1

(3.2)

±0.15

TO-92L-A1 Package

1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

1

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

CBOIC

CEOIC

EBOIE

I

CBO

h

FE1

h

FE2

CE(sat)IC

BE(sat)IC

T

ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Palse measurement

2: Rank classification

*

Rank Q R

h

FE1

90 to 155 130 to 220

= −10 µA, IE = 0 −80 V

= −100 µA, IB = 0 −80 V

= −1 µA, IC = 0 −5V

VCB = −20 V, IE = 0 − 0.1 µA

2

*

VCE = −10 V, IC = −150 mA 90 220 

VCE = −5 V, IC = −500 mA 50 100

= −500 mA, IB = −50 mA − 0.2 − 0.4 V

= −500 mA, IB = −50 mA − 0.85 −1.2 V

VCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz

VCB = −10 V, IE = 0, f = 1 MHz 11 20 pF

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002 SJC00004BED

1

2SA0777

PC  T

1.2

)

1.0

W
(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

a

Ambient temperature Ta (°C

V

 I

−10

)
V

(

CE(sat)

−1

− 0.1

− 0.01

Collector-emitter saturation voltage V

− 0.001

−1 −10 −100

CE(sat)

25°C

C

IC / IB = 10

Ta = 75°C

−25°C

Collector current IC (mA

IC  V

BE(sat)

Ta = −25°C

CE

IB = −10 mA

 I

C

IC / IB = 10

25°C

75°C

Ta = 25°C

−9 mA

−8 mA

−7 mA

−6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

−1.2

−1.0

)
A

(

− 0.8

C

− 0.6

− 0.4

Collector current I

− 0.2

0

0 −10−8−2 −6−4

)

300

250

FE

200

150

100

Forward current transfer ratio h

50

−1.2

−1.0

)
A

(

− 0.8

C

− 0.6

− 0.4

Collector current I

− 0.2

0

0 −10−8−2 −6−4

)

Collector-emitter voltage VCE (V

V

−100

)
V

(

BE(sat)

−10

−1

− 0.1

IC  I

B

VCE = −10 V

= 25°C

T

a

Base current IB (mA

hFE  I

C

VCE = −10 V

Ta = 75°C

25°C

−25°C

)

Base-emitter saturation voltage V

−1 000

)

− 0.01

−1 −10 −100

Collector current IC (mA

−1 000

)

0

−1 −10 −100

Collector current IC (mA

−1 000

)

fT  I

200

180

)

160

MHz
(

140

T

120

100

80

60

40

Transition frequency f

20

0

1 10 100

Emitter current IE (mA

2

E

VCB = −10 V

= 25°C

T

a

(pF)

ob

C

Cob  V

50

40

CB

IE = 0
f = 1 MHz

= 25°C

T

a

4

10

3

10

VCB = −20 V

I

CBO

 T

a

)

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

)

Collector-base voltage VCB (V

)

a

T
(

= 25°C

2

a

10

T
(

CBO

I

CBO

I

10

1

)

0 18060 12040 100 16014020 80

Ambient temperature Ta (°C

)

SJC00004BED