Panasonic 2SA0720A User Manual
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA0720A (2SA720A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1318A
■ Features
• High collector-emitter voltage (Base open) V
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
CEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
−80 V
−70 V
−5V
− 0.5 A
−1A
625 mW
150 °C
−55 to +150 °C
0.45
0.7
2.5
+0.15
–0.1
±0.1
+0.6
–0.2
123
5.0
±0.2
2.5
+0.6
–0.2
±0.2
0.7
±0.2
2.3
±0.2
5.1
±0.5
12.9
Unit: mm
4.0
±0.2
+0.15
0.45
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
1
Forward current transfer ratio
*
Collector-emitter saturation voltage
1
Base-emitter saturation voltage
*
Transition frequency f
Collector output capacitance C
1
*
CBOIC
CEOIC
EBOIE
I
CBO
h
FE1
h
FE2
V
CE(sat)IC
V
BE(sat)IC
T
ob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurment
2: Rank classification
*
Rank Q R
h
FE1
85 to 170 120 to 240
= −10 µA, IE = 0 −80 V
= −2 mA, IB = 0 −70 V
= −10 µA, IC = 0 −5V
VCB = −20 V, IE = 0 − 0.1 µA
2
*
VCE = −10 V, IC = −150 mA 85 240
VCE = −10 V, IC = −500 mA 40
= −300 mA, IB = −30 mA − 0.2 − 0.6 V
= −300 mA, IB = −30 mA − 0.85 −1.50 V
VCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz
VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF
Publication date: March 2003 SJC00003BED
Note) The part number in the parenthesis shows conventional part number.
1
2SA0720A
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
800
a
)
mW
(
600
C
400
200
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
−10
)
V
(
CE(sat)
−1
− 0.1
− 0.01
Collector-emitter saturation voltage V
− 0.001
−1 −10 −100
CE(sat)
25°C
C
IC / IB = 10
Ta = 75°C
−25°C
Collector current IC (mA
IC V
BE(sat)
Ta = −25°C
CE
IB = −10 mA
I
C
IC / IB = 10
25°C
75°C
Ta = 25°C
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
)
−1.2
−1.0
)
A
(
− 0.8
C
− 0.6
− 0.4
Collector current I
− 0.2
0
0 −10−8−2 −6−4
)
Collector-emitter voltage VCE (V
V
−100
)
V
(
BE(sat)
−10
−1
− 0.1
−1.2
−1.0
)
A
(
− 0.8
C
− 0.6
− 0.4
Collector current I
− 0.2
0
0 −10−8−2 −6−4
300
250
FE
200
150
100
Forward current transfer ratio h
50
IC I
B
VCE = −10 V
= 25°C
T
a
Base current IB (mA
hFE I
C
VCE = −10 V
Ta = 75°C
25°C
−25°C
)
Base-emitter saturation voltage V
− 0.01
−1 000
)
−1 −10 −100
Collector current IC (mA
−1 000
)
0
−1 −10 −100
Collector current IC (mA
−1 000
)
fT I
200
)
160
MHz
(
T
120
80
40
Transition frequency f
0
1 10 100
Emitter current IE (mA
E
VCB = −10 V
= 25°C
T
a
50
(pF)
ob
C
40
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
−1 −10 −100
)
2
Cob V
CB
IE = 0
f = 1 MHz
= 25°C
T
a
Collector-base voltage VCB (V
SJC00003BED
4
10
3
10
CEO
VCB = −20 V
a
I
T
)
)
a
T
(
= 25°C
2
a
10
T
(
CBO
I
CBO
I
10
1
)
012040 16080
Ambient temperature Ta (°C
)
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