Panasonic 2SA0720 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SA0720

Silicon PNP epitaxial planar type

For low-frequency power amplification and driver amplification
Complementary to 2SC1318

 Features

 Complementary pair with 2SC1318

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

–60 V

–50 V

–5 V

–500 mA

–1 A

625 mW

150

–55 to +150

°C

°C

 Package

Code

TO-92B-B1

Pin Name

1. Emitter

2. Collector

3. Base

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank Q R S

h

FE1

85 to 170 120 to 240 170 to 340

CBOIC

CEOIC

EBOIE

I

CBO

h

FE1

h

FE2

CE(sat)IC

BE(sat)IC

T

C

= –10 mA, IE = 0 –60 V

= –10 mA, IB = 0 –50 V

= –10 mA, IC = 0 –5 V

VCB = –20 V, IE = 0 – 0.1

*VCE = –10 V, IC = –150 mA 85 340

VCE = –10 V, IC = –500 mA 40

= –300 mA, IB = –30 mA – 0.35 – 0.60 V

= –300 mA, IB = –30 mA –1.1 –1.5 V

VCB = –10 V, IE = 50 mA, f = 200 MHz 200 MHz

VCB = –10 V, IE = 0, f = 1 MHz 6 15 pF

re

mA



Publication date : October 2008 SJC00415AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 16040 12080 14020 10060

0

800

600

200

500

700

400

100

300

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C

)

0 −12−10−8−2 −6−4

0

−1200

−1000

−800

−600

−400

−200

Ta = 25°C

− 0.9 mA

− 0.8 mA

− 0.7 mA

− 0.6 mA

− 0.5 mA

− 0.4 mA

− 0.3 mA

− 0.2 mA

− 0.1 mA

IB = −1.0 mA

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

−1 −10 −100

−1000

− 0.001

− 0.01

− 0.1

−1

−10

IC / IB = 10

Ta = 75°C

25°C

−25°C

Collector-emitter saturation voltage V

CE(sat)

(

V

)

Collector current IC (mA

)

−1 −10 −100

−1000

− 0.01

− 0.1

−1

−10

−100

IC / IB = 10

Ta = −25°C

25°C

75°C

Base-emitter saturation voltage V

BE(sat)

(

V

)

Collector current IC (mA

)

− 0.01

− 0.1 −1 −10

0

600

500

400

300

200

100

VCE = −10 V

Ta = 75°C

25°C

−25°C

Forward current transfer ratio h

FE

Collector current IC (A

)

1 10 100

0

240

200

160

120

80

40

VCB = −10 V
Ta = 25°C

Transition frequency f

T

(

MHz

)

Emitter current IE (mA

)

−1 −10 −100

0

50

40

30

20

10

IE = 0
f = 1 MHz
Ta = 25°C

Collector-base voltage VCB (V

)

Collector output capacitance

(Common base, input open circuited)

C

ob

(pF)

1 10 100 1000

0

−120

−100

−80

−60

−40

−20

IC = −2 mA
Ta = 25°C

Base-emitter resistance RBE (kΩ

)

Collector-emitter voltage

(Resistor between B and E)

V

CER

(V)

0 −10−8−2 −6−4

0

−800

−600

−200

−500

−700

−400

−100

−300

VCE = −10 V
Ta = 25°C

Base current IB (mA

)

Collector current I

C

(

mA

)

2SA0720

PC  Ta IC  VCE IC  I

V

 IC V

CE(sat)

BE(sat)

 I

C

hFE  I

B

C

fT  IE Cob  V

2 SJC00415AED

V

CB

CER

 R

BE