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查询2SA0719供应商
Transistors
2SA0719, 2SA0720 (2SA719, 2SA720)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317, 2SC1318
■ Features
5.0
±0.2
±0.2
5.1
Unit: mm
4.0
±0.2
• Complementary pair with 2SC1317 and 2SC1318
2.5
+0.6
–0.2
±0.2
0.7
±0.2
2.3
±0.5
12.9
+0.15
0.45
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
2SA0719 V
CBO
2SA0720 −60
2SA0719 V
CEO
2SA0720 −50
EBO
C
CP
C
j
−55 to +150 °C
stg
−30 V
−25 V
−5V
−500 mA
−1A
625 mW
150 °C
0.45
0.7
2.5
+0.15
–0.1
±0.1
+0.6
–0.2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
2SA0719 V
CBOIC
2SA0720 −60
2SA0719 V
CEOIC
2SA0720 −50
EBOIE
I
CBO
FE1
h
FE2
CE(sat)IC
BE(sat)IC
T
ob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
= −10 µA, IE = 0 −30 V
= −10 mA, IB = 0 −25 V
= −10 µA, IC = 0 −5V
VCB = −20 V, IE = 0 − 0.1 µA
*VCE = −10 V, IC = −150 mA 85 340
VCE = −10 V, IC = −500 mA 40
= −300 mA, IB = −30 mA − 0.35 − 0.60 V
= −300 mA, IB = −30 mA −1.1 −1.5 V
VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2003 SJC00002CED
1
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2SA0719, 2SA0720
PC T
800
)
700
mW
(
600
C
500
400
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
a
Ambient temperature Ta (°C
V
I
−10
)
V
(
CE(sat)
−1
− 0.1
− 0.01
Collector-emitter saturation voltage V
− 0.001
−1 −10 −100
CE(sat)
25°C
C
IC / IB = 10
Ta = 75°C
−25°C
Collector current IC (mA
IC V
BE(sat)
Ta = −25°C
CE
I
Ta = 25°C
IB = −1.0 mA
C
IC / IB = 10
25°C
75°C
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
)
−800
−700
)
−600
mA
(
C
−500
−400
−300
−200
Collector current I
−100
0
0 −10−8−2 −6−4
600
500
FE
400
300
Ta = 75°C
200
Forward current transfer ratio h
100
−1 200
−1 000
)
mA
(
−800
C
−600
−400
Collector current I
−200
0
)
0 −12−10−8−2 −6−4
Collector-emitter voltage VCE (V
V
−100
)
V
(
BE(sat)
−10
−1
− 0.1
IC I
Base current IB (mA
hFE I
25°C
−25°C
B
VCE = −10 V
= 25°C
T
a
C
VCE = −10 V
)
Base-emitter saturation voltage V
−1 000
)
− 0.01
−1 −10 −100
Collector current IC (mA
−1 000
)
0
− 0.01
− 0.1 −1 −10
Collector current IC (A
)
fT I
240
200
)
MHz
(
160
T
120
80
Transition frequency f
40
0
1 10 100
Emitter current IE (mA
2
E
VCB = −10 V
= 25°C
T
a
Cob V
50
(pF)
ob
C
40
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
)
−1 −10 −100
Collector-base voltage VCB (V
CB
IE = 0
f = 1 MHz
= 25°C
T
a
(V)
V
Collector-emitter voltage
)
−120
−100
CER
−80
−60
−40
−20
(Resistor between B and E)
0
V
R
CER
1101001000
Base-emitter resistance RBE (kΩ
BE
IC = −2 mA
= 25°C
T
a
2SA0720
2SA0719
)
SJC00002CED