Panasonic 2SA0719 User Manual

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Transistors

2SA0719, 2SA0720 (2SA719, 2SA720)

Silicon PNP epitaxial planar type

For low-frequency power amplification and driver amplification

Complementary to 2SC1317, 2SC1318

■ Features

5.0

±0.2

±0.2

5.1

Unit: mm

4.0

±0.2

• Complementary pair with 2SC1317 and 2SC1318

2.5

+0.6
–0.2

±0.2

0.7

±0.2

2.3

±0.5

12.9

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

EIAJ: SC-43A

TO-92-B1 Package

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

2SA0719 V

CBO

2SA0720 −60

2SA0719 V

CEO

2SA0720 −50

EBO

C

CP

C

j

−55 to +150 °C

stg

−30 V

−25 V

−5V

−500 mA

−1A

625 mW

150 °C

0.45

0.7

2.5

+0.15
–0.1

±0.1

+0.6
–0.2

123

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

2SA0719 V

CBOIC

2SA0720 −60

2SA0719 V

CEOIC

2SA0720 −50

EBOIE

I

CBO

FE1

h

FE2

CE(sat)IC

BE(sat)IC

T

ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S

h

FE1

85 to 170 120 to 240 170 to 340

= −10 µA, IE = 0 −30 V

= −10 mA, IB = 0 −25 V

= −10 µA, IC = 0 −5V

VCB = −20 V, IE = 0 − 0.1 µA

*VCE = −10 V, IC = −150 mA 85 340 

VCE = −10 V, IC = −500 mA 40 

= −300 mA, IB = −30 mA − 0.35 − 0.60 V

= −300 mA, IB = −30 mA −1.1 −1.5 V

VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz

VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2003 SJC00002CED

1

2SA0719, 2SA0720

PC  T

800

)

700

mW
(

600

C

500

400

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

a

Ambient temperature Ta (°C

V

 I

−10

)
V

(

CE(sat)

−1

− 0.1

− 0.01

Collector-emitter saturation voltage V

− 0.001

−1 −10 −100

CE(sat)

25°C

C

IC / IB = 10

Ta = 75°C

−25°C

Collector current IC (mA

IC  V

BE(sat)

Ta = −25°C

CE

 I

Ta = 25°C

IB = −1.0 mA

C

IC / IB = 10

25°C

75°C

− 0.9 mA

− 0.8 mA

− 0.7 mA

− 0.6 mA

− 0.5 mA

− 0.4 mA

− 0.3 mA

− 0.2 mA

− 0.1 mA

)

−800

−700

)

−600

mA
(

C

−500

−400

−300

−200

Collector current I

−100

0

0 −10−8−2 −6−4

600

500

FE

400

300

Ta = 75°C

200

Forward current transfer ratio h

100

−1 200

−1 000

)

mA

(

−800

C

−600

−400

Collector current I

−200

0

)

0 −12−10−8−2 −6−4

Collector-emitter voltage VCE (V

V

−100

)
V

(

BE(sat)

−10

−1

− 0.1

IC  I

Base current IB (mA

hFE  I

25°C

−25°C

B

VCE = −10 V

= 25°C

T

a

C

VCE = −10 V

)

Base-emitter saturation voltage V

−1 000

)

− 0.01

−1 −10 −100

Collector current IC (mA

−1 000

)

0

− 0.01

− 0.1 −1 −10

Collector current IC (A

)

fT  I

240

200

)

MHz
(

160

T

120

80

Transition frequency f

40

0

1 10 100

Emitter current IE (mA

2

E

VCB = −10 V

= 25°C

T

a

Cob  V

50

(pF)

ob

C

40

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

)

−1 −10 −100

Collector-base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

(V)

V

Collector-emitter voltage

)

−120

−100

CER

−80

−60

−40

−20

(Resistor between B and E)

0

V

 R

CER

1101001000

Base-emitter resistance RBE (kΩ

BE

IC = −2 mA

= 25°C

T

a

2SA0720

2SA0719

)

SJC00002CED