Panasonic 2SA0683, 2SA0684 User Manual

Transistors

2SA0683 (2SA683), 2SA0684 (2SA684)

Silicon PNP epitaxial planar type

For low-frequency power amplification and driver amplification

5.9

±0.2

4.9

Unit: mm

±0.2

Complementary to 2SC1383, 2SC1384

±0.2

8.6

■ Features

• Allowing supply with the radial taping

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

2SA0683 V

CBO

2SA0684 −60

2SA0683 V

CEO

2SA0684 −50

EBO

C

CP

C

j

−55 to +150 °C

stg

−30 V

−25 V

−5V

−1A

−1.5 A

1W

150 °C

0.7

±0.1

0.45

+0.2
–0.1

132

(1.27)(1.27)

2.54

+0.3

0.7

–0.2

±0.5

13.5

(3.2)

±0.15

+0.2

0.45

–0.1

1: Emitter
2: Collector
3: Base
EIAJ: SC-51

TO-92L-A1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

Transition frequency f

Collector output capacitance C

2SA0683 V

CBOIC

2SA0684 −60

2SA0683 V

CEOIC

2SA0684 −50

EBOIE

I

1

*

CBO

h

FE1

h

FE2

CE(sat)IC

BE(sat)IC

T

ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

2: Rank classification

*

Rank Q R S

h

FE

85 to 170 120 to 240 170 to 340

= −10 µA, IE = 0 −30 V

= −2 mA, IB = 0 −25 V

= −10 µA, IC = 0 −5V

VCB = −20 V, IE = 0 − 0.1 µA

2

*

VCE = −10 V, IC = −500 mA 85 340 

VCE = −5 V, IC = −1 A 50

= −500 mA, IB = −50 mA − 0.2 − 0.4 V

= −500 mA, IB = −50 mA − 0.85 −1.20 V

VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz

VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2004 SJC00001CED

1

2SA0683, 2SA0684

PC  T

1.2

)

1.0

W
(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

a

Ambient temperature Ta (°C

V

 I

−100

)
V

(

CE(sat)

−10

−1

− 0.1

Collector-emitter saturation voltage V

− 0.01

− 0.01

CE(sat)

25°C

− 0.1 −1 −10

Collector current IC (A

C

IC / IB = 10

Ta = 75°C

−25°C

)

IC  V

BE(sat)

Ta = −25°C

75°C

CE

 I

Ta = 25°C

IB = −10 mA

−9 mA

−8 mA

−7 mA

−6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

)

C

IC / IB = 10

25°C

−1.5

−1.25

)
A

(

−1.0

C

− 0.75

− 0.50

Collector current I

− 0.25

0

0 −10−8−2 −6−4

)

Collector-emitter voltage VCE (V

V

−100

)
V

(

BE(sat)

−10

−1

− 0.1

−1.2

VCE = −10 V

= 25°C

T

a

−1.0

)

mA
(

− 0.8

C

− 0.6

− 0.4

Collector current I

− 0.2

0

0 −12−10−8−2 −6−4

600

500

FE

400

Ta = 75°C

300

200

Forward current transfer ratio h

100

IC  I

Base current IB (mA

hFE  I

25°C

−25°C

B

)

C

VCE = −10 V

Base-emitter saturation voltage V

− 0.01

− 0.01

− 0.1 −1 −10

Collector current IC (A

)

0

− 0.01

− 0.1 −1 −10

Collector current IC (A

)

200

VCB = −10 V

= 25°C

T

a

)

160

MHz
(

T

120

80

40

Transition frequency f

0

1 10 100

Emitter current IE (mA

2

fT  I

E

50

(pF)

ob

C

40

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

)

Cob  V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

(V)

V

Collector-emitter voltage

)

−120

−100

CER

−80

−60

−40

−20

(Resistor between B and E)

0

0.1 1 10 100

V

 R

CER

BE

IC = −10 mA

= 25°C

T

a

2SA0684

2SA0683

Base-emitter resistance RBE (kΩ

)

SJC00001CED