Panasonic 2SA0683, 2SA0684 User Manual

Transistors

2SA0683 (2SA683), 2SA0684 (2SA684)

Silicon PNP epitaxial planar type

For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384

■ Features

• Allowing supply with the radial taping

■ Absolute Maximum Ratings Ta = 25°C

Parameter		Symbol	Rating	Unit
Collector-base voltage	2SA0683	VCBO	−30	V
(Emitter open)	2SA0684		−60
Collector-emitter voltage	2SA0683	VCEO	−25	V
(Base open)	2SA0684		−50
Emitter-base voltage (Collector open)		VEBO	−5	V
Collector current		IC	−1	A
Peak collector current		ICP	−1.5	A
Collector power dissipation		PC	1	W
Junction temperature		Tj	150	°C
Storage temperature		Tstg	−55 to +150	°C

Unit: mm

5.9±0.2						4.9±0.2
						±0.2
						8.6
0.7±0.1
						+0.3 –0.2
						0.7
						±0.5
						13.5

	+0.2				0.45–0.1+0.2
	0.45–0.1
	(1.27)		(1.27)		1: Emitter
	1	2	3	(3.2)	2: Collector
					3: Base
			2.54±0.15		EIAJ: SC-51
					TO-92L-A1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter			Symbol	Conditions	Min	Typ	Max	Unit
Collector-base voltage		2SA0683	VCBO	IC = −10 µA, IE = 0	−30			V
(Emitter open)		2SA0684			−60
Collector-emitter voltage		2SA0683	VCEO	IC = −2 mA, IB = 0	−25			V
(Base open)		2SA0684			−50
Emitter-base voltage (Collector open)			VEBO	IE = −10 µA, IC = 0	−5			V
Collector-base cutoff current (Emitter open)			ICBO	VCB = −20 V, IE = 0			− 0.1	µA
Forward current transfer ratio *1			hFE1 *2	VCE = −10 V, IC = −500 mA	85		340
			hFE2	VCE = −5 V, IC = −1 A	50
Collector-emitter saturation voltage			VCE(sat)	IC = −500 mA, IB = −50 mA		− 0.2	− 0.4	V
Base-emitter saturation voltage			VBE(sat)	IC = −500 mA, IB = −50 mA		− 0.85	−1.20	V
Transition frequency			fT	VCB = −10 V, IE = 50 mA, f = 200 MHz		200		MHz
Collector output capacitance			Cob	VCB = −10 V, IE = 0, f = 1 MHz		20	30	pF
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement *2: Rank classification

Rank	Q	R	S
hFE	85 to 170	120 to 240	170 to 340

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2004

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1

2SA0683, 2SA0684

PC Ta

IC VCE

IC IB

1.2

−1.5

Ta = 25°C

−1.2

VCE = −10 V

)

Ta = 25°C

−1.0

W

1.0

−1.25

IB = −10 mA

(

)

−9 mA

)

C

A

−8 mA

mA

P

0.8

(

−1.0

(

− 0.8

Collector powerdissipation

C

−7 mA

C

Collector current I

Collector current I

−6 mA

0.6

− 0.75

−5 mA

− 0.6

−4 mA

0.4

− 0.50

−3 mA

− 0.4

−2 mA

0.2

− 0.25

−1 mA

− 0.2

0

0

40

80

120

160

0

−2

−4

−6

−8

−10

0

−2

−4

−6

−8 −10 −12

0

0

Ambient temperature

Ta (°C)

Collector-emitter voltage VCE

(V)

Base current IB

(mA)

VCE(sat) IC

VBE(sat) IC

hFE IC

)

−100

IC / IB = 10

−100

IC / IB = 10

600

VCE = −10 V

V

)

(

V

CE(sat)

(

BE(sat)

FE

500

−10

−10

Collector-emitter saturation voltageV

Base-emitter saturation voltage V

Forward current transferratioh

400

−1

−1

Ta = −25°C

25°C

Ta = 75°C

300

Ta = 75°C

75°C

25°C

25°C

200

−25°C

− 0.1

−25°C

− 0.1

100

− 0.01

− 0.01

0

− 0.1

−1

−10

− 0.1

−1

−10

− 0.1

−1

−10

− 0.01

− 0.01

− 0.01

Collector current

IC (A)

Collector current

IC (A)

Collector current

IC (A)

fT IE

Cob VCB

VCER RBE

200

VCB = −10 V

(pF)

50

IE = 0

−120

IC = −10 mA

Ta = 25°C

ob

f = 1 MHz

(V)

Ta = 25°C

)

160

40

Ta = 25°C

−100

MHz

C

CER

(

Collector output capacitance (Common base, input opencircuited)

V

−80

T

Collector-emitter voltage (Resistor between B and E)

Transition frequency f

120

30

−60

80

2SA0684

20

−40

40

10

2SA0683

−20

0

0

0

1

10

100

−10

−100

1

10

100

−1

0.1

Emitter current IE

(mA)

Collector-base voltage VCB (V)

Base-emitter resistance RBE

(kΩ)

2

SJC00001CED