Page 1
Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
5.9
±0.2
4.9
Unit: mm
±0.2
Complementary to 2SC1383, 2SC1384
±0.2
8.6
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
2SA0683 V
CBO
2SA0684 −60
2SA0683 V
CEO
2SA0684 −50
EBO
C
CP
C
j
−55 to +150 °C
stg
−30 V
−25 V
−5V
−1A
−1.5 A
1W
150 °C
0.7
±0.1
0.45
+0.2
–0.1
132
(1.27)(1.27)
2.54
+0.3
0.7
–0.2
±0.5
13.5
(3.2)
±0.15
+0.2
0.45
–0.1
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
2SA0683 V
CBOIC
2SA0684 −60
2SA0683 V
CEOIC
2SA0684 −50
EBOIE
I
1
*
CBO
h
FE1
h
FE2
CE(sat)IC
BE(sat)IC
T
ob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
2: Rank classification
*
Rank Q R S
h
FE
85 to 170 120 to 240 170 to 340
= −10 µA, IE = 0 −30 V
= −2 mA, IB = 0 −25 V
= −10 µA, IC = 0 −5V
VCB = −20 V, IE = 0 − 0.1 µA
2
*
VCE = −10 V, IC = −500 mA 85 340
VCE = −5 V, IC = −1 A 50
= −500 mA, IB = −50 mA − 0.2 − 0.4 V
= −500 mA, IB = −50 mA − 0.85 −1.20 V
VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2004 SJC00001CED
1
Page 2
2SA0683, 2SA0684
PC T
1.2
)
1.0
W
(
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080
a
Ambient temperature Ta (°C
V
I
−100
)
V
(
CE(sat)
−10
−1
− 0.1
Collector-emitter saturation voltage V
− 0.01
− 0.01
CE(sat)
25°C
− 0.1 −1 −10
Collector current IC (A
C
IC / IB = 10
Ta = 75°C
−25°C
)
IC V
BE(sat)
Ta = −25°C
75°C
CE
I
Ta = 25°C
IB = −10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
)
C
IC / IB = 10
25°C
−1.5
−1.25
)
A
(
−1.0
C
− 0.75
− 0.50
Collector current I
− 0.25
0
0 −10−8−2 −6−4
)
Collector-emitter voltage VCE (V
V
−100
)
V
(
BE(sat)
−10
−1
− 0.1
−1.2
VCE = −10 V
= 25°C
T
a
−1.0
)
mA
(
− 0.8
C
− 0.6
− 0.4
Collector current I
− 0.2
0
0 −12−10−8−2 −6−4
600
500
FE
400
Ta = 75°C
300
200
Forward current transfer ratio h
100
IC I
Base current IB (mA
hFE I
25°C
−25°C
B
)
C
VCE = −10 V
Base-emitter saturation voltage V
− 0.01
− 0.01
− 0.1 −1 −10
Collector current IC (A
)
0
− 0.01
− 0.1 −1 −10
Collector current IC (A
)
200
VCB = −10 V
= 25°C
T
a
)
160
MHz
(
T
120
80
40
Transition frequency f
0
1 10 100
Emitter current IE (mA
2
fT I
E
50
(pF)
ob
C
40
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
−1 −10 −100
)
Cob V
CB
IE = 0
f = 1 MHz
= 25°C
T
a
Collector-base voltage VCB (V
(V)
V
Collector-emitter voltage
)
−120
−100
CER
−80
−60
−40
−20
(Resistor between B and E)
0
0.1 1 10 100
V
R
CER
BE
IC = −10 mA
= 25°C
T
a
2SA0684
2SA0683
Base-emitter resistance RBE (kΩ
)
SJC00001CED
Page 3
)
T
(
I
a
CEO
4
10
3
10
)
= 25°C
2
a
10
T
(
CEO
I
10
1
I
T
CEO
VCE = −10 V
016040 12080
Ambient temperature Ta (°C
2SA0683, 2SA0684
a
)
A
(
C
−10
Collector current I
−10
−10
)
Safe operation area
−10
I
CP
−1
I
C
−1
−2
−3
− 0.1 −1 −10 −100
Collector-emitter voltage VCE (V
t = 1 s
Single pulse
= 25°C
T
a
t = 10 ms
2SA0683
2SA0684
)
SJC00001CED
3
Page 4
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
Loading...