Panasonic 2PG401 Datasheet
IGBTs
2PG401
Insulated Gate Bipolar Transistor
■ Features
●High breakdown voltage: V
●Allowing to control large current: I
●Allowing to provide with the surface mounting package
CES
= 400V
C(peak)
= 130A
■ Applications
●For flash-light for use in a camera
■ Absolute Maximum Ratings (T
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
DC
Pulse
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
Symbol
V
V
I
C
I
CP
P
C
T
ch
T
stg
CES
GES
= 25°C)
C
Ratings
−55 to +150
400
±8
5
130
15
1.3
150
Unit
V
V
A
A
W
°C
°C
7.2±0.3
+0.3
–0.
10.0
0.8±0.21.0±0.2
7.0±0.3
3.0±0.2
4.6±0.4
213
1.1±0.1
0.75±0.1
2.3±0.2
unit: mm
3.5±0.2
0.85±0.1
0.4±0.1
1: Gate
2: Collector
3: Emitter
I Type Package
■ Electrical Characteristics (T
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
CES
I
GES
V
CES
V
GE(th)
V
CE(sat)
C
ies
t
d(on)
t
r
t
d(off)
t
f
= 25°C)
C
Conditions
VCE = 320V, VGE = 0
VGE = ±8V, VCE = 0
IC = 1mA, VGE = 0
VCE = 10V, IC = 1mA
VGE = 5V, IC = 5A
VGE = 5V, IC = 130A
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V, IC = 130A
VGE = 5V, Rg = 25Ω
min
400
0.5
typ
1930
130
1.4
350
1.5
max
10
±1
1.5
2
10
Unit
µA
µA
V
V
V
pF
ns
µs
ns
µs
1
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