Datasheet SFH 7221 Datasheet (OSRAM)

GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor

Lead (Pb) Free Product - RoHS Compliant

SFH 7221

Wesentliche Merkmale

• SMT-Gehäuse mit IR-Sender (880 nm) und
Si-Fototransistor

• Geeignet für SMT-Bestückung

• Gegurtet lieferbar

• Sender und Empfänger getrennt ansteuerbar

• Geeignet für IR-Reflow Löten

Anwendungen

• Datenübertragung

• Wegfahrsperre

• Infrarotschnittstelle

Typ
Type

SFH 7221 Q65110A2741 SMT Multi TOPLED

Bestellnummer
Ordering Code

Features

• SMT package with IR emitter (880 nm) and
Si-phototransistor

• Suitable for SMT assembly

• Available on tape and reel

• Emitter und detector can be controlled
separately

• Suitable for IR reflow soldering

Applications

• Data transmission

• Lock bar

• Infrared interface

Gehäuse
Package

®

2005-07-08 1

Grenzwerte
Maximum Ratings

SFH 7221

Bezeichnung
Parameter

Betriebstemperatur
Operating temperature range

Lagertemperatur
Storage temperature range

Sperrschichttemperatur
Junction temperature

Durchlassstrom (LED)
Forward current (LED)

Kollektorstrom (Transistor)
Collector current (Transistor)

Stoßstrom
Surge current

t ≤ 10 µs, D = 0.005

Sperrspannung (LED)
Reverse voltage (LED)

Symbol
Symbol

T

op

T

stg

T

j

I

F

I

C

I

FM

V

R

Wert

Value

Einheit
Unit

IRED Transistor

– 40 ... + 100 – 40 ... + 100 °C

– 40 ... + 100 – 40 ... + 100 °C

+ 100 + 100 °C

100 – mA

–15mA

2500 75 mA

5–V

Kollektor-Emitter Spannung
(Transistor)
Collector-emitter voltage
(Transistor)

Verlustleistung
Total power dissipation

Wärmewiderstand Sperrschicht / Umgebung
Thermal resistance junction / ambient
Montage auf PC-Board
mounting on pcb

1)

1)

(Padgröße ≥ 16 mm2)

(pad size ≥ 16 mm2)
Sperrschicht / Lötstelle
junction / soldering joint

1)

PC-board: G30/FR4

Hinweis / Notes

Die angegebenen Grenzdaten gelten für einen Chip.
The stated maximum ratings refer to one chip.

V

P

R

R

CE

tot

th JA

th JS

–35V

180 165 mW

500

400

450

–

K/W

K/W

2005-07-08 2

Kennwerte IRED (TA = 25 °C)
Characteristics IRED

SFH 7221

Bezeichnung
Parameter

Wellenlänge der Strahlung
Wavelength of radiation

I

= 100 mA, tp = 20 ms

F

Spektrale Bandbreite bei 50% von
Spectral bandwidth at 50% of

I

max

, I

I

max

Abstrahlwinkel
Viewing angle

Aktive Chipfläche
Active chip area

Abmessungen der aktiven Chipfläche
Dimensions of active chip area

Schaltzeiten, I
10% Switching times, I

von 10% auf 90% und von 90% auf

e

from 10% to 90 % and from

e

90% to 10%

I

= 100 mA, RL = 50 Ω

F

Kapazität
Capacitance

V

= 0 V, f = 1 MHz

R

Durchlassspannung
Forward voltage

I

= 100 mA, tp = 20 ms

F

I

= 1 A, tp = 100 µs

F

Sperrstrom
Reverse current

V

= 5 V

R

Gesamtstrahlungsfluss
Total radiant flux

I

= 100 mA, tp = 20 ms

F

Temperaturkoeffizient von I

bzw. Φ

e

Temperature coefficient of Ie bzw. Φ

I

= 100 mA, IF = 100 mA

F

, IF = 100 mA

= 100 mA

F

e
e

Symbol
Symbol

λ

peak

Wert

Value

Einheit
Unit

880 nm

∆λ 80 nm

ϕ±60 Grad

deg.

A

L × B

× W

L
t

, t

r

f

C

o

V

F

V

F

I

R

Φ

e

TC

I

0.09 mm

0.3 × 0.3 mm

0.5 µs

15 pF

1.5 (≤ 1.8)

3.0 (≤ 3.8)

V
V

0.01 (≤ 1)µA

23 mW

– 0.5 %/K

2

2005-07-08 3

T

Kennwerte IRED (

= 25 °C)

A

Characteristics IRED (cont’d)

SFH 7221

Bezeichnung
Parameter

Temperaturkoeffizient von
Temperature coefficient of V

I

= 100 mA

F

V

F
F

Temperaturkoeffizient von λ
Temperature coefficient of λ

I

= 100 mA

F

Strahlstärke I

in Achsrichtung

e

gemessen bei einem Raumwinkel Ω = 0.01 sr

Radiant Intensity I

in Axial Direction

e

at a solid angle of Ω = 0.01 sr

Bezeichnung
Parameter

Strahlstärke

Symbol
Symbol

I

e

Radiant intensity

I

= 100 mA, tp = 20 ms

F

Strahlstärke

I

e typ.

Radiant intensity

I

= 1 A, tp = 100 µs

F

Symbol
Symbol

TC

V

TC

λ

Wert

Value

Einheit
Unit

– 2 mV/K

+ 0.25 nm/K

Werte
Values

Einheit
Unit

> 4 mW/sr

48 mW/sr

IRED Radiation Characteristics I
Phototransistor Directional Characteristics

0˚10˚20˚40˚ 30˚

ϕ

1.0

50˚

60˚

70˚

80˚

90˚

100˚

1.0 0.8 0.6 0.4

2005-07-08 4

0.8

0.6

0.4

0.2

0

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

= f (ϕ)

rel

S

rel

= f (ϕ)

OHL01660

Kennwerte Fototransistor (TA = 25 °C, λ = 880 nm)
Characteristics Phototransistor

SFH 7221

Bezeichnung
Parameter

Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity

Spektraler Bereich der Fotoempfindlichkeit

S = 10% von S

max

Spectral range of sensitivity

S = 10% of S

max

Bestrahlungsempfindliche Fläche (∅ 240 µm)
Radiant sensitive area (∅ 240 µm)

Abmessung der Chipfläche
Dimensions of chip area

Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface

Halbwinkel
Half angle

Kapazität
Capacitance

V

= 0 V, f = 1 MHz, E = 0

CE

Dunkelstrom
Dark current

V

= 25 V, E = 0

CE

Fotostrom
Photocurrent

E

= 0.1 mW/cm2, VCE = 5 V

e

Anstiegszeit/Abfallzeit
Rise time/Fall time

I

= 1 mA, VCC = 5 V, RL = 1 kΩ

C

Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage

I

= 5 µA, Ee = 0.1 mW/cm

C

2

Symbol
Symbol

λ

S max

Wert
Value

Einheit
Unit

860 nm

λ 380 … 1150 nm

A 0.045 mm

2

L × B 0.45 × 0.45 mm × mm

H

ϕ±60 Grad

C

CE

I

CEO

I

PCE

t

, t

r

f

V

CEsat

0.5 … 0.7 mm

deg.

5.0 pF

1 (≤ 200) nA

≥ 16 µA

7 µs

150 mV

2005-07-08 5

IRED

Forward Current IF = f (VF)

T

= 25 °C

A

R

thjA

OHR00881

V

F

OHR00883

= 450 K/W

T

A

1

10

A

Ι

F

0

10

-1

10

-2

10

-3

10

0123456V8

Max. Permissible Forward Current

I

= f (TA)

F

120

Ι

F

100

80

60

40

20

0

0

20 40 60 80 100 120mA˚C

Rel Luminous Intensity

I

/ IV (10 mA) = f (IF), TA = 25 °C

V

10

OHR00878

3

2

10

Ι

e

Ι

(100mA)

e

1

10

0

10

-1

10

-2

10

-3

10

10 10110

0

2

Ι

Relative Spectral Emission

I

= f (λ)

rel

100

%

Ι

rel

80

60

40

20

0

800 850 900 950 nm 1000

750

OHR00877

SFH 7221

Perm. Pulse Handling Capability

I

= f (tp), Duty cycle D = parameter,

F

T

= 25 °C

A

4

10

mA

Ι

F

104mA

F

D

0.005=

0.01

0.02

3

10

2

10

1

10

10 s

0.05

0.1

0.2

0.5
DC

t

p

t

p

=D

T

T

-5

10-410-310-210-110010110

Perm. Pulse Handling Capability

I

= f (tp), Duty cycle D = parameter,

F

T

= 85 °C

A

4

10
mA

I

F

3

10

2

0.2

10

0.5
1

1

10

λ

1010 10

=

D

D

0.005

0.01

0.02

0.05

0.1

-2-3-4-5

OHR00886

Ι

F

2

t

p

OHF02621

t

P

t

P

T

I

F

T

=

10 s10

t

p

210-1

1010

10

2005-07-08 6

Phototransistor

Rel. Spectral Sensitivity

S

= f (λ)

rel

100

S

rel

%

80

60

40

20

OHF01121

Photocurrent I

E

= Parameter

e

0

10

mA

Ι

PCE

-1

10

= f (VCE),

PCE

0.5

0.25

0.1

mW

1

cm
mW

cm

mW
cm

mW
cm

OHF01529

2

2

2

2

Dark Current

I

= f (VCE), E = 0

CEO

1

10
nA

Ι

CEO

0

10

-1

10

-2

10

SFH 7221

OHF01527

0

400

600 800 1000 1200

Total Power Dissipation

P

= f (TA)

tot

200
mW

P

tot

160

120

80

40

0

0

20 40 60 80 ˚C 100

Dark Current

I

= f (TA), VCE = 5 V, E = 0

CEO

3

10

Ι

CEO

nm

λ

OHF00871

T

A

OHF01530

-2

10

0

5 10 15 20 25 30 35

Capacitance

C

= f (VCE), f = 1 MHz, E = 0

CE

5.0

C

pF

CE

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5
0

-2

10

10-110010110

Photocurrent

I

= f (Ee), VCE = 5 V

PCE

3

10

A

µ

Ι

PCE

V

V

CE

OHF01528

V

V

CE

OHF00312

-3

10

0 5 10 15 20 25 30 35V

Photocurrent

V

= 5 V

CE

1.6

Ι

PCE

Ι

PCE

25

1.4

I

PCE/IPCE25°

V

CE

= f (TA),

OHF01524

1.2

1.0

0.8

0.6

0.4

0.2

2

0

-25

0 25 50 75 100

C

T

A

2

10

1

10

0

10

-1

10

-25nA0 25 50 75 100

˚C

T

A

2

10

1

10

0

10

-1

10

-3

10

-2

10

2005-07-08 7

m

W/cm

0

2

10

E

e

Maßzeichnung
Package Outlines

0.8 (0.031)

0.6 (0.024)

3.0 (0.118)

2.6 (0.102)

2.3 (0.091)

2.1 (0.083)

SFH 7221

2.1 (0.083)

1.7 (0.067)

0.9 (0.035)

0.7 (0.028)

32

CC

3.0 (0.118)

3.4 (0.134)

Package marking

Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

EA

41

0.1 (0.004) typ

(2.4 (0.094))

0.5 (0.020)

1.1 (0.043)

0.18 (0.007)

0.12 (0.005)

3.7 (0.146)

3.3 (0.130)

0.6 (0.024)

0.4 (0.016)

GPLY6965

Empfohlenes Lötpaddesign IR-Reflow Löten
Recommended Solder Pad IR Reflow Soldering

3.3 (0.130)

2.6 (0.102)

1.1 (0.043)

3.3 (0.130)

0.4 (0.016)

1.5 (0.059)

4.5 (0.177)

Padgeometrie für
verbesserte Wärmeableitung

Paddesign for
improved heat dissipation

2005-07-08 8

Kathoden Markierung / Cu Fläche / 12 mm per pad
Cathode marking

Lötstoplack
Solder resist

Cu-area

0.5 (0.020)

7.5 (0.295)

2

_

<

OHLPY439

SFH 7221

Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)

300

˚C

250

T

200

150

100

50

255 ˚C
240 ˚C

217 ˚C

120 s max

Ramp Up
3 K/s (max)

25 ˚C

0

0

50 100 150 200 250 300

Maximum Solder Profile

Recommended Solder Profile

Minimum Solder Profile

10 s min

30 s max

Ramp Down
6 K/s (max)

100 s max

OHLA0687

260 ˚C
245 ˚C
235 ˚C

+0 ˚C

-5 ˚C
±5 ˚C
+5 ˚C

-0 ˚C

s

t

Published by
OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

© All Rights Reserved.

The information describes the type of component and shall not be considered as assured chara cteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

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material that is returned to us unsorted or wh ich we are not obliged to accept, we shall hav e to invoice you for any costs
incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components

1

A critical component is a component used in a life-support device or sys tem whose failure can reasonably be expected

to cause the failure of that life-support device or system, or to affec t its safety or e ffectiveness of that dev ice or system.

2

Life support devices or systems are intended (a) to be implanted in the human body , or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

2005-07-08 9

1

, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.