GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
Lead (Pb) Free Product - RoHS Compliant
SFH 7221
Wesentliche Merkmale
• SMT-Gehäuse mit IR-Sender (880 nm) und
Si-Fototransistor
• Geeignet für SMT-Bestückung
• Gegurtet lieferbar
• Sender und Empfänger getrennt ansteuerbar
• Geeignet für IR-Reflow Löten
Anwendungen
• Datenübertragung
• Wegfahrsperre
• Infrarotschnittstelle
Typ
Type
SFH 7221 Q65110A2741 SMT Multi TOPLED
Bestellnummer
Ordering Code
Features
• SMT package with IR emitter (880 nm) and
Si-phototransistor
• Suitable for SMT assembly
• Available on tape and reel
• Emitter und detector can be controlled
separately
• Suitable for IR reflow soldering
Applications
• Data transmission
• Lock bar
• Infrared interface
Gehäuse
Package
®
2005-07-08 1
Grenzwerte
Maximum Ratings
SFH 7221
Bezeichnung
Parameter
Betriebstemperatur
Operating temperature range
Lagertemperatur
Storage temperature range
Sperrschichttemperatur
Junction temperature
Durchlassstrom (LED)
Forward current (LED)
Kollektorstrom (Transistor)
Collector current (Transistor)
Stoßstrom
Surge current
t ≤ 10 µs, D = 0.005
Sperrspannung (LED)
Reverse voltage (LED)
Symbol
Symbol
T
op
T
stg
T
j
I
F
I
C
I
FM
V
R
Wert
Value
Einheit
Unit
IRED Transistor
– 40 ... + 100 – 40 ... + 100 °C
– 40 ... + 100 – 40 ... + 100 °C
+ 100 + 100 °C
100 – mA
–15mA
2500 75 mA
5–V
Kollektor-Emitter Spannung
(Transistor)
Collector-emitter voltage
(Transistor)
Verlustleistung
Total power dissipation
Wärmewiderstand Sperrschicht / Umgebung
Thermal resistance junction / ambient
Montage auf PC-Board
mounting on pcb
1)
1)
(Padgröße ≥ 16 mm2)
(pad size ≥ 16 mm2)
Sperrschicht / Lötstelle
junction / soldering joint
1)
PC-board: G30/FR4
Hinweis / Notes
Die angegebenen Grenzdaten gelten für einen Chip.
The stated maximum ratings refer to one chip.
V
P
R
R
CE
tot
th JA
th JS
–35V
180 165 mW
500
400
450
–
K/W
K/W
2005-07-08 2
Kennwerte IRED (TA = 25 °C)
Characteristics IRED
SFH 7221
Bezeichnung
Parameter
Wellenlänge der Strahlung
Wavelength of radiation
I
= 100 mA, tp = 20 ms
F
Spektrale Bandbreite bei 50% von
Spectral bandwidth at 50% of
I
max
, I
I
max
Abstrahlwinkel
Viewing angle
Aktive Chipfläche
Active chip area
Abmessungen der aktiven Chipfläche
Dimensions of active chip area
Schaltzeiten, I
10% Switching times, I
von 10% auf 90% und von 90% auf
e
from 10% to 90 % and from
e
90% to 10%
I
= 100 mA, RL = 50 Ω
F
Kapazität
Capacitance
V
= 0 V, f = 1 MHz
R
Durchlassspannung
Forward voltage
I
= 100 mA, tp = 20 ms
F
I
= 1 A, tp = 100 µs
F
Sperrstrom
Reverse current
V
= 5 V
R
Gesamtstrahlungsfluss
Total radiant flux
I
= 100 mA, tp = 20 ms
F
Temperaturkoeffizient von I
bzw. Φ
e
Temperature coefficient of Ie bzw. Φ
I
= 100 mA, IF = 100 mA
F
, IF = 100 mA
= 100 mA
F
e
e
Symbol
Symbol
λ
peak
Wert
Value
Einheit
Unit
880 nm
∆λ 80 nm
ϕ±60 Grad
deg.
A
L × B
× W
L
t
, t
r
f
C
o
V
F
V
F
I
R
Φ
e
TC
I
0.09 mm
0.3 × 0.3 mm
0.5 µs
15 pF
1.5 (≤ 1.8)
3.0 (≤ 3.8)
V
V
0.01 (≤ 1)µA
23 mW
– 0.5 %/K
2
2005-07-08 3
T
Kennwerte IRED (
= 25 °C)
A
Characteristics IRED (cont’d)
SFH 7221
Bezeichnung
Parameter
Temperaturkoeffizient von
Temperature coefficient of V
I
= 100 mA
F
V
F
F
Temperaturkoeffizient von λ
Temperature coefficient of λ
I
= 100 mA
F
Strahlstärke I
in Achsrichtung
e
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity I
in Axial Direction
e
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Strahlstärke
Symbol
Symbol
I
e
Radiant intensity
I
= 100 mA, tp = 20 ms
F
Strahlstärke
I
e typ.
Radiant intensity
I
= 1 A, tp = 100 µs
F
Symbol
Symbol
TC
V
TC
λ
Wert
Value
Einheit
Unit
– 2 mV/K
+ 0.25 nm/K
Werte
Values
Einheit
Unit
> 4 mW/sr
48 mW/sr
IRED Radiation Characteristics I
Phototransistor Directional Characteristics
0˚10˚20˚40˚ 30˚
ϕ
1.0
50˚
60˚
70˚
80˚
90˚
100˚
1.0 0.8 0.6 0.4
2005-07-08 4
0.8
0.6
0.4
0.2
0
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
= f (ϕ)
rel
S
rel
= f (ϕ)
OHL01660
Kennwerte Fototransistor (TA = 25 °C, λ = 880 nm)
Characteristics Phototransistor
SFH 7221
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von S
max
Spectral range of sensitivity
S = 10% of S
max
Bestrahlungsempfindliche Fläche (∅ 240 µm)
Radiant sensitive area (∅ 240 µm)
Abmessung der Chipfläche
Dimensions of chip area
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface
Halbwinkel
Half angle
Kapazität
Capacitance
V
= 0 V, f = 1 MHz, E = 0
CE
Dunkelstrom
Dark current
V
= 25 V, E = 0
CE
Fotostrom
Photocurrent
E
= 0.1 mW/cm2, VCE = 5 V
e
Anstiegszeit/Abfallzeit
Rise time/Fall time
I
= 1 mA, VCC = 5 V, RL = 1 kΩ
C
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
= 5 µA, Ee = 0.1 mW/cm
C
2
Symbol
Symbol
λ
S max
Wert
Value
Einheit
Unit
860 nm
λ 380 … 1150 nm
A 0.045 mm
2
L × B 0.45 × 0.45 mm × mm
H
ϕ±60 Grad
C
CE
I
CEO
I
PCE
t
, t
r
f
V
CEsat
0.5 … 0.7 mm
deg.
5.0 pF
1 (≤ 200) nA
≥ 16 µA
7 µs
150 mV
2005-07-08 5
IRED
Forward Current IF = f (VF)
T
= 25 °C
A
R
thjA
OHR00881
V
F
OHR00883
= 450 K/W
T
A
1
10
A
Ι
F
0
10
-1
10
-2
10
-3
10
0123456V8
Max. Permissible Forward Current
I
= f (TA)
F
120
Ι
F
100
80
60
40
20
0
0
20 40 60 80 100 120mA˚C
Rel Luminous Intensity
I
/ IV (10 mA) = f (IF), TA = 25 °C
V
10
OHR00878
3
2
10
Ι
e
Ι
(100mA)
e
1
10
0
10
-1
10
-2
10
-3
10
10 10110
0
2
Ι
Relative Spectral Emission
I
= f (λ)
rel
100
%
Ι
rel
80
60
40
20
0
800 850 900 950 nm 1000
750
OHR00877
SFH 7221
Perm. Pulse Handling Capability
I
= f (tp), Duty cycle D = parameter,
F
T
= 25 °C
A
4
10
mA
Ι
F
104mA
F
D
0.005=
0.01
0.02
3
10
2
10
1
10
10 s
0.05
0.1
0.2
0.5
DC
t
p
t
p
=D
T
T
-5
10-410-310-210-110010110
Perm. Pulse Handling Capability
I
= f (tp), Duty cycle D = parameter,
F
T
= 85 °C
A
4
10
mA
I
F
3
10
2
0.2
10
0.5
1
1
10
λ
1010 10
=
D
D
0.005
0.01
0.02
0.05
0.1
-2-3-4-5
OHR00886
Ι
F
2
t
p
OHF02621
t
P
t
P
T
I
F
T
=
10 s10
t
p
210-1
1010
10
2005-07-08 6
Phototransistor
Rel. Spectral Sensitivity
S
= f (λ)
rel
100
S
rel
%
80
60
40
20
OHF01121
Photocurrent I
E
= Parameter
e
0
10
mA
Ι
PCE
-1
10
= f (VCE),
PCE
0.5
0.25
0.1
mW
1
cm
mW
cm
mW
cm
mW
cm
OHF01529
2
2
2
2
Dark Current
I
= f (VCE), E = 0
CEO
1
10
nA
Ι
CEO
0
10
-1
10
-2
10
SFH 7221
OHF01527
0
400
600 800 1000 1200
Total Power Dissipation
P
= f (TA)
tot
200
mW
P
tot
160
120
80
40
0
0
20 40 60 80 ˚C 100
Dark Current
I
= f (TA), VCE = 5 V, E = 0
CEO
3
10
Ι
CEO
nm
λ
OHF00871
T
A
OHF01530
-2
10
0
5 10 15 20 25 30 35
Capacitance
C
= f (VCE), f = 1 MHz, E = 0
CE
5.0
C
pF
CE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
-2
10
10-110010110
Photocurrent
I
= f (Ee), VCE = 5 V
PCE
3
10
A
µ
Ι
PCE
V
V
CE
OHF01528
V
V
CE
OHF00312
-3
10
0 5 10 15 20 25 30 35V
Photocurrent
V
= 5 V
CE
1.6
Ι
PCE
Ι
PCE
25
1.4
I
PCE/IPCE25°
V
CE
= f (TA),
OHF01524
1.2
1.0
0.8
0.6
0.4
0.2
2
0
-25
0 25 50 75 100
C
T
A
2
10
1
10
0
10
-1
10
-25nA0 25 50 75 100
˚C
T
A
2
10
1
10
0
10
-1
10
-3
10
-2
10
2005-07-08 7
m
W/cm
0
2
10
E
e
Maßzeichnung
Package Outlines
0.8 (0.031)
0.6 (0.024)
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
SFH 7221
2.1 (0.083)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
32
CC
3.0 (0.118)
3.4 (0.134)
Package marking
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
EA
41
0.1 (0.004) typ
(2.4 (0.094))
0.5 (0.020)
1.1 (0.043)
0.18 (0.007)
0.12 (0.005)
3.7 (0.146)
3.3 (0.130)
0.6 (0.024)
0.4 (0.016)
GPLY6965
Empfohlenes Lötpaddesign IR-Reflow Löten
Recommended Solder Pad IR Reflow Soldering
3.3 (0.130)
2.6 (0.102)
1.1 (0.043)
3.3 (0.130)
0.4 (0.016)
1.5 (0.059)
4.5 (0.177)
Padgeometrie für
verbesserte Wärmeableitung
Paddesign for
improved heat dissipation
2005-07-08 8
Kathoden Markierung / Cu Fläche / 12 mm per pad
Cathode marking
Lötstoplack
Solder resist
Cu-area
0.5 (0.020)
7.5 (0.295)
2
_
<
OHLPY439
SFH 7221
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
300
˚C
250
T
200
150
100
50
255 ˚C
240 ˚C
217 ˚C
120 s max
Ramp Up
3 K/s (max)
25 ˚C
0
0
50 100 150 200 250 300
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
10 s min
30 s max
Ramp Down
6 K/s (max)
100 s max
OHLA0687
260 ˚C
245 ˚C
235 ˚C
+0 ˚C
-5 ˚C
±5 ˚C
+5 ˚C
-0 ˚C
s
t
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured chara cteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or wh ich we are not obliged to accept, we shall hav e to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
A critical component is a component used in a life-support device or sys tem whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affec t its safety or e ffectiveness of that dev ice or system.
2
Life support devices or systems are intended (a) to be implanted in the human body , or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2005-07-08 9
1
, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
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