OSRAM SFH 4751 Technical data

OSTAR

®

- Lighting IR 6-fold with Optics (940nm)

Lead (Pb) Free Product - RoHS Compliant

SFH 4751

Wesentliche Merkmale

•3.1 W optische Leistung bei IF=1A

• Aktive Chipfläche 2.1 x 3.2 mm

2

• max. Gleichstrom 1 A

• niedriger Wärmewiderstand (3 K/W)

• Emissionswellenlänge 940 nm

• ESD-sicher bis 2 kV nach JESD22-A114-B

Anwendungen

• Infrarotbeleuchtung für Kameras

• Überwachungssysteme

• IR-Datenübertragung

• Verkehrsüberwachungssysteme

• Beleuchtung für Bilderkennungssysteme

• Nicht für Anwendungen im Automobilbereich

Sicherheitshinweise

Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare Infrarot­Strahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheits­richtlinien der IEC-Normen 60825-1 und 62471
behandelt werden.

Features

•3.1 W optical power at IF=1A

• Active chip area 2.1 x 3.2 mm2

• max. DC-current 1 A

• Low thermal resistance (3 K/W)

• Spectral emission at 940 nm

• ESD save up to 2 kV acc. to JESD22-A114-B

Applications

• Infrared Illumination for cameras

• Surveillance systems

• IR Data Transmission

• Intelligent Transportation Systems

• Machine vision systems

• Not released for automotive applications

Safety Advices

Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 and IEC 62471.

Typ
Type

Bestellnummer
Ordering Code

Strahlstärke1) (IF = 1A, tp = 20 ms)
Radiant intensity

1)

Ιe (mW/sr)

SFH 4751 Q65110A8867 > 630 (typ. 900)

1)

gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr.

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SFH 4751

Grenzwerte T

1)

= 25 °C

B

Maximum Ratings

Bezeichnung
Parameter

Betriebs- und Lagertemperatur
Operating and storage temperature range

Sperrschichttemperatur
Junction temperature

Sperrspannung
Reverse voltage

Vorwärtsgleichstrom
Forward current

Stoßstrom, tp = 100 µs, D = 0
Surge current

Leistungsaufnahme,
Power consumption

Thermische Verlustleistung
Thermal power-dissipation

Symbol
Symbol

T

, T

B, op

T

J

V

R

I

F

I

FSM

P

tot

P

th

B, stg

Wert
Value

Einheit
Unit

– 40 … + 100 °C

+ 145 °C

0.5 V

1 A

5 A

12 W

10.3 W

Wärmewiderstand Sperrschicht / Bodenplatte

R

thJB

3 K/W

Thermal resistance Junction / Base plate

1)

T

= Temperatur auf der Rückseite der Metallkernplatine / Temperature at the backside of the base plate.

B

Kennwerte (TB = 25 °C)
Characteristics

Bezeichnung
Parameter

Wellenlänge der Strahlung

Symbol
Symbol

λ

peak

Wert
Value

950 nm

Wavelength at peak emission

I

= 1 A, tp = 10 ms

F

Schwerpunkts-Wellenlänge der Strahlung

λ

centroid

940 nm

Centroid wavelength

I

= 1 A, tp = 10 ms

F

Spektrale Bandbreite bei 50% von I
Spectral bandwidth at 50% of I

IF = 1 A, t

= 10 ms

p

max

Abstrahlwinkel

max

Δλ 35 nm

ϕ ± 70 Grad

Half angle

Einheit
Unit

deg.

2010-02-15 2

Kennwerte (TB = 25 °C)
Characteristics (cont’d)

SFH 4751

Bezeichnung
Parameter

Abmessungen der aktiven Chipfläche1)
Dimension of the active chip area

Schaltzeiten, Ie von 10% auf 90% und von 90%

I

auf 10%,

= 5 A, RL = 50 Ω

F

Symbol
Symbol

L × B
L × W

t

, t

r

f

Switching times, Ιe from 10% to 90% and from

I

90% to 10%,
Durchlassspannung

= 5 A, RL = 50 Ω

F

V

F

Forward voltage

I

= 1 A, tp = 100 µs

F

Gesamtstrahlungsfluss

Φ

e

Total radiant flux

I

= 1 A, tp = 100 μs

F

Temperaturkoeffizient von Ie bzw. Φ
Temperature coefficient of Ie or Φ

I

= 1 A, tp = 10 ms

F

Temperaturkoeffizient von V
Temperature coefficient of V

I

= 1 A, tp = 10 ms

F

e

F

F

Temperaturkoeffizient von λ

e

TC

TC

TC

I

V

λ,centroid

Temperature coefficient of λ

I

= 1 A, tp = 10 ms

F

1)

Die aktive Chipfläche besteht aus 6 einzelnen Chips mit je 1 x 1 mm².
The active chip area consists of 6 single chips with 1 x 1 mm² each.

Wert
Value

Einheit
Unit

2.1 × 3.2 mm²

10, 10 ns

9.8 (< 12) V

3.1 W

– 0.3 %/K

– 12 mV/K

+ 0.3 nm/K

2010-02-15 3

OHF04180

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0

100˚

90˚

80˚

70˚

60˚

50˚

0˚10˚20˚30˚40˚

0

0.2

0.4

0.6

0.8

1.0

ϕ

Strahlstärke1) Ι

e

Radiant Intensity1) Ι

Bezeichnung
Parameter

SFH 4751

e

Symbol Werte

Values

SFH 4751 -EA SFH 4751 -EB

Einheit
Unit

Strahlstärke
Radiant Intensity

I

= 1 A, tp = 20 ms

F

1)

Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1)
Only one group in one packing unit (variation lower 1.6:1)

Ι

e min

Ι

e max

630
1000

Abstrahlcharakteristik
Radiation Characteristics I

= f (ϕ)

rel

800
1250

mW/sr
mW/sr

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SFH 4751

800

0

nm

%

OHF04133

20

40

60

80

100

1050850 900 950

I

rel

λ

0

0

˚C

T

I

F

A

OHF04168

0.2

0.4

0.6

0.8

1.0

1.2

B

20 40 60 80 120

OHF04169

F

I

V

A

5

F

V

10

1

10

-2

5

10

-1

5

10

0

7 9 11 13 15 17

0

-5

F

I

A

t

p

s

OHF04167

-410-310-210-1100101102

1010

P

t

=

D

T

T

t

P

I

F

0.01

0.33

0.5

0.2

0.1

0.02

D

0.005

=

0.05

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.5

1

OHF03848

10

-3

A

10

1

0

10

5

5

10

-1

-2

5

10

I

F

10 10

0

10

1

1055

-2 -1

Φ

(1 A)

Φ

e

e

Relative spektrale Emission
Relative Spectral Emission

I

= f (λ), TB = 25 °C

rel

Max. zulässiger Durchlassstrom
Max. Permissible Forward Current

I

= f (TB), R

F

2010-02-15 5

thJB

= 3 K/W

Durchlassstrom
Forward Current

I

= f (VF), TB = 25 °C,

F

Single pulse, tp = 100 μs

Zulässige Impulsbelastbarkeit
Permissible Pulse Handling
Capability

I

= f (tp), T

F

= 85 °C,

B

Duty cycle D = parameter

Relativer Gesamtstrahlungsfluss
Relative Total Radiant Flux

Φe/Φe(1A) = f (IF), TB = 25 °C,
Single pulse, tp = 100 μs

Anschlusskontaktierung
Contacting

SFH 4751

Drahttyp
Wire type

AWG 18 ~0.8 mm

AWG 20 ~0.5 mm

AWG 22 ~0.3 mm

Durchmesser
Diameter

(Litze;
flexible wire)

(Litze;
flexible wire)

(Litze;
flexible wire)

Lötspitze
Solder Tip

3.2 mm
(Meisel;
Chisel)

3.2 mm
(Meisel;
Chisel)

3.2 mm
(Meisel;
Chisel)

Temperatur
Temperature

250 °C
350 °C

250 °C
350 °C

250 °C
350 °C

Lötzeit
Solder Time

16 sec.
6 sec

14 sec.
5 sec

9 sec.
3 sec

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Maßzeichnung und Ersatzschaltbild
Package Outlines and equivalent circuit diagram

SFH 4751

Maße in mm (inch) / Dimensions in mm (inch).

Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg

www.osram-os.com

© All Rights Reserved.

The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1

A critical component is a component usedin a life-support device or system whose failure can reasonably be expected

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2

Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

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