Leistungsstarke IR-Lumineszenzdiode
High Power Infrared Emitter
Lead (Pb) Free Product - RoHS Compliant
SFH 4501, SFH 4502, SFH 4503
SFH 4501
SFH 4502 SFH 4503
Wesentliche Merkmale
• Leistungsstarke GaAs-LED (40mW)
• Hoher Wirkunsgrad bei kleinen Strömen
• Typische Peakwellenlänge 950nm
• SFH 4501 -03: Unterschiedliche Halbwinkel
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• Sensorik
• Diskrete Lichtschranken
• IR-Scheinwerfer für Kameras
Typ
Type
Bestellnummer
Ordering Code
Strahlstärkegruppierung 1) (IF = 100mA, tp = 20 ms)
Radiant intensity grouping
Ie (mW/sr)
Features
• High Power GaAs-LED (40mW)
• High Efficiency at low currents
• Typical peak wavelength 950nm
• SFH 4501 - 03: different half angles
Applications
• IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
• Remote control for steady and varying intensity
• Sensor technology
• Discrete interrupters
• IR spotlight for cameras
1)
SFH 4501 Q62702P5061 110 (>63)
SFH 4502 Q62702P5062 60 (>25)
SFH 4503 Q62702P5305 250 (>63)
1)
gemessen bei einem Raumw ink el Ω = 0.01 sr (SFH4503 Ω = 0.001 sr)
measured at a solid angle of Ω = 0.01 sr (SFH4503 Ω = 0.001 sr)
2004-12-16 1
Grenzwerte (TA = 25 °C) Maximum Ratings
SFH 4501, SFH 4502, SFH 4503
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Durchlaßstrom
Forward current
Stoßstrom, tp = 10 µs, D = 0
Surge current
Verlustleistung
Power dissipation
Wärmewiderstand Sperrschicht - Umgebung,
freie Beinchenlänge max. 10 mm
Thermal resistance junction - ambient,
lead length between package bottom and PCB
max. 10 mm
Symbol
Symbol
T
; T
op
stg
V
R
I
(DC) 100 mA
F
I
FSM
P
tot
R
thJA
Wert
Value
– 40 … + 100 °C
3 V
2.2 A
180 mW
375 K/W
Einheit
Unit
Kennwerte (TA = 25 °C) Characteristics
Bezeichnung
Parameter
Wellenlänge der Strahlung
Wavelength at peak emission
I
= 100 mA, tp = 20 ms
F
Spektrale Bandbreite bei 50% von I
Spectral bandwidth at 50% of I
IF = 100 m A, t
= 20 ms
p
max
max
Abstrahlwinkel
Half angle
SFH 4501
SFH 4502
SFH 4503
Aktive Chipfläche
Active chip area
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
Symbol
Symbol
λ
peak
Wert
Value
Einheit
Unit
950 nm
∆λ 40 nm
ϕ
Grad
deg.
± 7
± 18
± 4
A
L × B
0.09 mm
0.3 × 0.3 mm
L × W
2
2004-12-16 2
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
SFH 4501, SFH 4502, SFH 4503
Bezeichnung
Parameter
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei
I
= 100 mA, tp = 20 ms, RL = 50 Ω
F
Switching times, Ιe from 10% to 90% and from
I
90% to 10%,
= 100 mA, tp = 20 ms, RL = 50 Ω
F
Kapazität
Capacitance
V
= 0 V, f = 1 MHz
R
Durchlaßspannung,
Forward voltage
I
= 100 mA, tp = 20 ms
F
I
= 1 A, tp = 100 µs
F
Sperrstrom,
Reverse current
V
= 3 V
R
Gesamtstrahlungsfluß,
Total radiant flux
I
= 100 mA, tp = 20 ms
F
Temperaturkoeffizient von Ie bzw. Φe,
I
= 100 mA
F
Temperature coefficient of Ie or Φe,
I
= 100 mA
F
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
Symbol
Symbol
t
, t
r
f
C
o
V
F
V
F
I
R
Φ
e
TC
I
TC
V
Wert
Value
Einheit
Unit
10 ns
35 pF
1.5 (≤ 1.8)
3.2 (≤ 4.3)
V
V
0.01 (≤ 10) µA
40 mW
– 0.44 %/K
– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
TC
Temperature coefficient of λ, IF = 100 mA
2004-12-16 3
λ
+ 0.2 nm/K
SFH 4501, SFH 4502, SFH 4503
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr (SFH 4503 Ω = 0.001 sr)
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr (SFH 4503 Ω = 0.001 sr)
Bezeichnung
Description
Strahlstärke
Radiant intensity
I
= 100 mA, tp = 20 ms
F
Strahlstärke
Radiant intensity
I
= 1 A, tp = 100 µs
F
Symbol Werte
Values
SFH 4501 SFH 4502 SFH 4503
I
e min
I
e typ
I
e typ
63
110
25
60
690 390 1500 mW/sr
63
250
Einheit
Unit
mW/sr
2004-12-16 4
Relative Spectral Emissi on
e
)
2
I
= f (λ)
rel
100
Ι
erel
80
OHF00777
SFH 4501, SFH 4502, SFH 4503
Ι
e
Radiant Intensity
Ι
Single pulse, tp = 20 µs
2
10
Ι
e
Ι
e (100 mA)
100 mA
= f (I
OHF00809
F
Max. Permissible Forward Current
I
= f (TA)
F
120
Ι
F
100
OHF00359
60
40
20
0
850 900 950 1000 1100
Forward Current IF = f (VF)
single pulse, tp = 20 µs
4
10
mA
Ι
F
3
10
2
10
1
10
0
10
-1
10
nm800
λ
OHF00784
0
10
-1
10
-2
10
-3
10
10 10110
23
10
mA
Ι
F
Permissible Pulse Handling
I
Capability
= f (τ), TA = 25 °C,
F
duty cycle D = parameter
1
10
A
I
F
5
0
10
t
P
=
D
T
5
OHF00041
t
P
T
D
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
80
R
= 375 K/W
thJA
60
40
20
40
10
I
F
0
0
20 40 60 80 100 120mA˚C
T
A
-2
10
-3
10
0
0.5 1 1.5 2 2.5 3 3.5 4.5
V
V
F
-1
10
-5
10
10-410-310-210-110010
2004-12-16 5
1
10s
t
p
SFH 4501, SFH 4502, SFH 4503
˚
Radiation Characteristics Ι
SFH 4501
50˚
60˚
70˚
80˚
90˚
100˚
Radiation Characteristics Ι
SFH 4502
50˚
= f (ϕ)
rel
ϕ
= f (ϕ)
rel
ϕ
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0˚10˚20˚30˚40˚
0
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0
0˚10˚20˚30˚40˚
OHF00859
OHF00810
60˚
70˚
80˚
90˚
100˚
Radiation Characteristics Ι
SFH 4503
50˚
60˚
70˚
80˚
90˚
0.40.60.81.0
= f (ϕ)
rel
ϕ
0.6
0.4
0.2
0
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120
0˚10˚20˚30˚40˚
1.0
0.8
0.6
0.4
0.2
0
OHF01142
100˚
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0
2004-12-16 6
Maßzeichnung
2.54 (0.100)
Area not flat
)
)
Package Outlines
SFH 4501
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
Area not flat
0.8 (0.031)
0.4 (0.016)
1.8 (0.071)
1.2 (0.047)
29.5 (1.161)
27.5 (1.083)
Anode
9.0 (0.354)
8.2 (0.323)
7.8 (0.307)
7.5 (0.295)
SFH 4501, SFH 4502, SFH 4503
5.9 (0.232)
ø4.8 (0.189)
ø5.1 (0.201)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
GEXY6952
SFH 4502
7.8 (0.307)
7.5 (0.295)
0.4 (0.016)
0.4 (0.016)
0.6 (0.024)
spacing
Maße werden wie folgt ange geben: mm (inch) / Dimensions are spe cified as follows: mm (inch).
1.8 (0.071)
1.2 (0.047)
29.0 (1.142)
27.0 (1.063)
0.8 (0.031)
Anode
9.0 (0.354)
8.2 (0.323)
ø5.1 (0.201)
ø4.8 (0.189)
Anode
5.9 (0.232
5.5 (0.217
0.6 (0.024)
0.4 (0.016)
GEXY6718
2004-12-16 7
SFH 4501, SFH 4502, SFH 4503
OHLPY985
SFH 4503
9.0 (0.354)
8.2 (0.323)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
1.8 (0.071)
1.2 (0.047)
Maße werden wie folgt ange geben: mm (inch) / Dimensions are spe cified as follows: mm (inch).
Area not flat
29 (1.142)
27 (1.063)
Anode
0.8 (0.031)
0.4 (0.016)
Chip position
7.8 (0.307)
7.5 (0.295)
ø4.8 (0.189)
ø5.1 (0.201)
5.7 (0.224)
5.1 (0.201)
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
GEXY6048
Empfohlenes Lötpaddesign
)
Wellenlöten (TTW)
Recommended Solder Pad TTW Soldering
4.8 (0.189)
4 (0.157)
Maße werden wie folgt ange geben: mm (inch) / Dimensions are spe cified as follows: mm (inch).
2004-12-16 8
SFH 4501, SFH 4502, SFH 4503
Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802)
300
C
250
T
200
150
100
235 C
CC... 130100
C... 260
1. Welle
1. wave
ca 200 K/s
10 s
5 K/s
2. Welle
2. wave
2 K/s
OHLY0598
Normalkurve
standard curve
Grenzkurven
limit curves
Zwangskühlung
forced cooling
s
t
50
2 K/s
0
0
50 100 150 200 250
© All Rights Reserved.Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be c ons idered as assured characteristics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances . For in fo rmation on the types in question pleas e c ont ac t our Sales Organization.
Packing
Please use the recycling operators k nown to you . We can als o help you – get in touch wit h your near est sales offic e.
By agreement we will take p acking material back, if it is sorted. You m ust bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-su pport devices or systems must be expressly authorized fo r such purpose! Critical
components
1
A critical component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intend ed (a) to be impl anted i n t he human b ody , or (b ) to supp ort a nd/or ma inta in
1
, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
and sustain human life. If th ey fail , it is rea so nable to assume that the health of the user m ay be endangered.
2004-12-16 9
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