OSRAM SFH 4252 Technical data

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
High Power Infrared Emitter (850 nm)

Lead (Pb) Free Product - RoHS Compliant

SFH 4252

Vorläufige Daten / Preliminary Data

Wesentliche Merkmale

• Infrarot LED mit sehr hoher Ausgangsleistung

• Emissionswellenlänge typ. 850 nm

Anwendungen

• Infrarotbeleuchtung für CMOS Kameras

• IR-Datenübertragung

• Sensorik

Sicherheitshinweise

Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare Infrarot­Strahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheits­richtlinien der IEC-Normen 60825-1 und 62471
behandelt werden.

Typ
Type

Bestellnummer
Ordering Code

Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping

Ie (mW/sr)

Features

• High Power Infrared LED

• Peak wavelength typ. 850 nm

Applications

• Infrared Illumination for CMOS cameras

• IR Data Transmission

• Optical sensors

Safety Advices

Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 and IEC 62471.

1)

SFH 4252 Q65110A2468 >10 (typ. 16)

1)

gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr

ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device

2007-04-25 1

Grenzwerte (TA = 25 °C) Maximum Ratings

SFH 4252

Bezeichnung
Parameter

Betriebs- und Lagertemperatur
Operating and storage temperature range

Sperrspannung
Reverse voltage

Vorwärtsgleichstrom
Forward current

Stoßstrom, tp = 200 µs, D = 0
Surge current

Verlustleistung
Power dissipation

Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm

2

Thermal resistance junction - ambient mounted

2

on PC-board (FR4), padsize 16 mm

each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block

Symbol
Symbol

Top , T

V

I

I

P

R

stg

R

F

FSM

tot

thJA

R

thJS

Wert
Value

Einheit
Unit

– 40 … + 100 °C

5 V

100 mA

1 A

180 mW

450

200

K/W

K/W

Kennwerte (TA = 25 °C) Characteristics

Bezeichnung
Parameter

Wellenlänge der Strahlung
Wavelength at peak emission

I

= 100 mA

F

Spektrale Bandbreite bei 50% von I
Spectral bandwidth at 50% of I

max

max

IF = 100 mA

Abstrahlwinkel
Half angle

Aktive Chipfläche
Active chip area

Abmessungen der aktiven Chipfläche
Dimension of the active chip area

Symbol
Symbol

λ

peak

Wert
Value

Einheit
Unit

850 nm

∆λ 35 nm

ϕ ± 60 Grad

deg.

A

L × B

0.09 mm

0.3 × 0.3 mm²

2

L × W

2007-04-25 2

Kennwerte (TA = 25 °C)
Characteristics (cont’d)

SFH 4252

Bezeichnung
Parameter

Schaltzeiten, Ie von 10% auf 90% und von 90%

I

auf 10%, bei

= 100 mA, RL = 50 Ω

F

Switching times, Ιe from 10% to 90% and from

I

90% to 10%,

= 100 mA, RL = 50 Ω

F

Durchlassspannung
Forward voltage

I

= 100 mA, tp = 20 ms

F

I

= 1 A, tp = 100 µs

F

Sperrstrom
Reverse current

V

= 5 V

R

Gesamtstrahlungsfluss
Total radiant flux

I

= 100 mA, tp = 20 ms

F

Temperaturkoeffizient von Ie bzw. Φe,

I

= 100 mA

F

Temperature coefficient of Ie or Φe, IF = 100 mA

Symbol
Symbol

t

, t

r

f

V

F

V

F

I

R

Φ

e typ

TC

I

Wert
Value

Einheit
Unit

12 ns

1.5 (< 1.8)

2.4 (< 3.0)

not designed for

V
V

µA
reverse
operation

40 mW

– 0.5 %/K

Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA

Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA

TC

TC

V

λ

– 0.7 mV/K

+ 0.2 nm/K

2007-04-25 3

SFH 4252

Strahlstärke Ie in Achsrichtung

1)

gemessen bei einem Raumwinkel Ω = 0.01 sr

Radiant Intensity Ie in Axial Direction

at a solid angle of Ω = 0.01 sr

Bezeichnung

Symbol Werte

Parameter

SFH 4252 -R SFH 4252 -S

Strahlstärke
Radiant intensity

I

= 100 mA, tp = 20 ms

F

Strahlstärke

I

e min

I

e max

I

e typ

10
20

100 140 mW/sr

Radiant intensity

I

= 1 A, tp = 100 µs

F

1)

Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) /

Only one group in one packing unit (variation lower 2:1)

Abstrahlcharakteristik
Radiation Characteristics I

= f (ϕ)

rel

0˚10˚20˚40˚ 30˚

ϕ

1.0

OHL01660

Values

16
32

Einheit
Unit

mW/sr
mW/sr

50˚

60˚

70˚

80˚

90˚

100˚

1.0 0.8 0.6 0.4

0.8

0.6

0.4

0.2

0

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

2007-04-25 4

Relative Spectral Emission

I

= f (λ)

rel

100

%

I

rel

80

60

40

20

OHL01714

I

e

Radiant Intensity

I

e

100 mA

= f (I

F

Single pulse, tp = 20 µs

OHL01715

I

I

e (100 mA)

1

10

e

0

10

5

-1

10

5

-2

10

5

SFH 4252

)

Max. Permissible Forward Current

I

= f (TA), R

F

120

Ι

F

100

80

60

40

20

= 450 K/W

thJA

R

thjA

OHR00883

= 450 K/W

0

700

Forward Current IF = f (VF)
Single pulse, tp = 20 µs

0

10

A

I

F

-1

10

5

-2

10

5

-3

10

5

-4

10

0

0.5 1 1.5 2 2.5 V3

nm

950750 800 850

λ

OHL01713

V

F

-3

10

0

10

1

10

2

10

Permissible Pulse Handling
Capability

I

= f (τ), TA = 25 °C,

F

duty cycle D = parameter

1010 1010 10

t

P

T

=

OHF02506

t

P

T

10 10s10

1.2
A

I

F

D

=

1.0

D

0.8

0.005

0.01

0.02

0.6

0.033

0.05

0.1

0.2

0.4

0.5
1

0.2

0

t

0

0

3

1055

mA

I

F

I

F

210-1-2-3-4-5

p

20 40 60 80 100 120mA˚C

T

A

2007-04-25 5

Maßzeichnung Package Outlines

SFH 4252

3.0 (0.118)

2.6 (0.102)

2.3 (0.091)

2.1 (0.083)

3.0 (0.118)

3.4 (0.134)

Cathode marking

0.1 (0.004) (typ.)

(2.4) (0.095)

3.7 (0.146)

0.18 (0.007)

0.12 (0.005)

2.1 (0.083)

1.7 (0.067)

4˚±1

3.3 (0.130)

0.5 (0.020)

1.1 (0.043)

0.9 (0.035)

0.7 (0.028)

A

C

0.6 (0.024)

0.4 (0.016)

GPLY6724

Maße in mm (inch) / Dimensions in mm (inch).

Gehäuse / Package

Anschlussbelegung
Pin configuration

TOPLED®, klarer Verguss / TOPLED®, clear resin

siehe Zeichnung
see drawing

2007-04-25 6

Empfohlenes Lötpaddesign Recommended Solder Pad Design

2.6 (0.102)

SFH 4252

2.6 (0.102)

1.5 (0.059)

4.5 (0.177)

Padgeometrie für
verbesserte Wärmeableitung

Paddesign for
improved heat dissipation

Maße in mm (inch) / Dimensions in mm (inch).

Lötstopplack
Solder resist

4.5 (0.177)

1.5 (0.059)

Cu-Fläche > 16 mm
Cu-area > 16 mm

2

2

OHLPY970

2007-04-25 7

SFH 4252

Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten (nach J-STD-020C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)

300

˚C

250

T

255 ˚C
240 ˚C

Maximum Solder Profile

Recommended Solder Profile

Minimum Solder Profile

217 ˚C

200

10 s min

30 s max

150

120 s max

100 s max

Ramp Down
6 K/s (max)

100

Ramp Up

50

3 K/s (max)

25 ˚C

0

0

50 100 150 200 250 300

t

Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802)

OHLA0687

260 ˚C
245 ˚C
235 ˚C

+0 ˚C

-5 ˚C
±5 ˚C

+5 ˚C

-0 ˚C

s

300

C

250

T

235 C

200

150

100

50

0

0

C... 260

1. Welle

1. wave

ca 200 K/s

CC... 130100

50 100 150 200 250

10 s

Zwangskühlung

2 K/s

forced cooling

5 K/s

2007-04-25 8

2. Welle

2. wave

OHLY0598

Normalkurve
standard curve

Grenzkurven
limit curves

2 K/s

s

t

SFH 4252

Published by
OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

© All Rights Reserved.

The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1

A critical component is a component usedin a life-support device or system whose failure can reasonably be expected

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2

Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

2007-04-25 9