OSRAM SFH 4235 Technical data

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm)
Lead (Pb) Free Product - RoHS Compliant
SFH 4235
Vorläufige Daten / Preliminary Data

Wesentliche Merkmale

IR-Lichtquelle mit hohem Wirkungsgrad
Chipgröße (emittierende Fläche) 1 x 1 mm2
max. Gleichstrom 1 A
niedriger Wärmewiderstand (9 K/W)
Schwerpunktswellenlänge 850 nm
ESD-sicher bis 2 kV nach JESD22-A114-E
Erweiterte Korrosionsfestigkeit (s.a. Abschnitt Maßzeichnung)

Anwendungen

Infrarotbeleuchtung für Kameras
Überwachungssysteme
Fahrer-Assistenz Systeme
Beleuchtung für Bilderkennungssysteme

Sicherheitshinweise

Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot­Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheits­richtlinien der IEC-Normen 60825-1 und 62471 behandelt werden.

Features

IR lightsource with high efficiency
die-size (emitting area) 1 x 1 mm2
max. DC-current 1 A
Low thermal resistance (9 K/W)
Center of spectral emission at 850 nm
ESD safe up to 2 kV acc. to JESD22-A114-E
Superior Corrosion Robustness
(see chapter package outlines)

Applications

Infrared Illumination for cameras
Surveillance systems
Driver assistance systems
Machine vision systems

Safety Advices

Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471.
Typ Type
SFH 4235 Q65110A8900 630 (typ. 950)
1)
gemessen mit Ulbrichtkugel / measured with integrating sphere
2010-05-18 1
Bestellnummer Ordering Code
Gesamtstrahlungsfluss1) (IF = 1A, tp = 10 ms) Total Radiant Flux
Φe (mW)
1)

Grenzwerte (TA = 25 °C) Maximum Ratings

SFH 4235
Bezeichnung Parameter
Betriebs- und Lagertemperatur Operating and storage temperature range
Sperrschichttemperatur Junction temperature
Sperrspannung Reverse voltage
Vorwärtsgleichstrom Forward current
Stoßstrom, tp = 200 µs, D = 0 Surge current
Leistungsaufnahme Power consumption
Wärmewiderstand Sperrschicht - Lötstelle Thermal resistance junction - soldering point

Kennwerte (TA = 25 °C) Characteristics

Symbol Symbol
Top , T
T
V
I
I
P
R
stg
J
R
F
FSM
tot
thJS
Wert Value
Einheit Unit
– 40 + 125 °C
+ 145 °C
1 V
1 A
5 A
3.4 W
9 K/W
Bezeichnung Parameter
Wellenlänge der Strahlung Wavelength at peak emission
I
= 1 A, tp = 10 ms
F
Centroid-Wellenlänge der Strahlung Centroid wavelength
I
= 1 A, tp = 10 ms
F
Spektrale Bandbreite bei 50% von I Spectral bandwidth at 50% of I
IF = 1 A, t
Abstrahlwinkel
= 10 ms
p
max
max
Half angle Aktive Chipfläche
Active chip area Abmessungen der aktiven Chipfläche
Dimension of the active chip area
Symbol Symbol
λ
peak
λ
centroid
Wert Value
Einheit Unit
860 nm
850 nm
Δλ 30 nm
ϕ ± 60 Grad
deg.
A
L × B
1 mm
1 × 1 mm²
2
L × W
2010-05-18 2
Kennwerte (TA = 25 °C) Characteristics (cont’d)
SFH 4235
Bezeichnung Parameter
Schaltzeiten, Ie von 10% auf 90% und von 90%
I
auf 10%,
= 5 A, RL = 50 Ω
F
Switching times, Ιe from 10% to 90% and from
I
90% to 10%,
= 5 A, RL = 50 Ω
F
Durchlassspannung Forward voltage
I
= 1 A, tp = 100 µs
F
I
= 5 A, tp = 100 µs
F
Strahlstärke Radiant intensity
I
= 1 A, tp = 100 μs
F
Temperaturkoeffizient von Ie bzw. Φ Temperature coefficient of Ie or Φ
I
= 1 A, tp = 10 ms
F
Temperaturkoeffizient von V Temperature coefficient of V
I
= 1 A, tp = 10 ms
F
F
F
e
e
Temperaturkoeffizient von λ Temperature coefficient of λ
I
= 1 A, tp = 10 ms
F
Symbol Symbol
t
/ t
r
f
V
F
V
F
I
e typ
TC
I
TC
V
TC
λ,centroid
Wert Value
Einheit Unit
7 / 14 ns
3.0 (< 3.4)
3.5 (< 4.5)
V V
320 mW/sr
– 0.3 %/K
– 2 mV/K
+ 0.3 nm/K
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SFH 4235
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚
20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Gesamtstrahlungsfluss1) Φ Total Radiant Flux1) Φ
Bezeichnung
e
e
Symbol Werte
Parameter
Gesamtstrahlungsfluss Total Radiant Flux
I
= 1 A, tp = 10 ms
F
1)
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1) / Only one group in one packing unit (variation lower 1.6:1)
Φ Φ
e min
e max
Abstrahlcharakteristik Radiation Characteristics I
= f (ϕ)
rel
Values
-EA -EB
630
1000
800
1250
Einheit Unit
mW mW
2010-05-18 4
SFH 4235
700
0
nm
%
OHF04132
20
40
60
80
100
950750 800 850
I
rel
λ
0
0
F
I
T
S
OHF04190
1.1
0.1
0.2
0.4
0.3
0.5
0.7
0.6
0.8
0.9
A
13010060 80 ˚C20 40
OHF04188
F
I
V
A
2
F
V
10
-1
5
10
0
5
10
1
10
-2
2.5 3 3.5 4
-5
F
I
A
t
p
s
OHF04189
-410-310-210-1100101102
1010
P
t
=
D
T
T
t
P
I
F
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.5
0.5
0.2
0.33
0.1
0.02
0.05
D
=
0.01
0.005
1
OHF04187
I
F
A
10-1510
0
510
1
1
10
-2
10
-3
10
5
10
10
5
-1
5
0
e
Φ
(1 A)
Φ
e
10
-2
Relative spektrale Emission Relative Spectral Emission
I
= f (λ)
rel
Max. zulässiger Durchlassstrom Max. Permissible Forward Current
I
= f (TA), R
F
thJS
= 9 K/W
Durchlassstrom Forward Current
I
= f (VF)
F
Single pulse, tp = 100 μs
Zulässige Impulsbelastbarkeit Permissible Pulse Handling Capability
I
= f (tp), TS = 85 °C,
F
Duty cycle D = parameter
Relativer Gesamtstrahlungsfluss Relative Total Radiant Flux
Φe/Φe(1A) = f (IF) Single pulse, tp = 100 μs
2010-05-18 5
Maßzeichnung1)
GPLY7072
6.2 (0.244)
5.8 (0.228)
1.9 (0.075)
1.7 (0.067)
Cathode
(R0.85 (0.033))
11.2 (0.441)
10.8 (0.425)
1.2 (0.047)
0.8 (0.031)
0...0.1 (0.004)
0.29 (0.011)
0.24 (0.009)
6.8 (0.268)
7.2 (0.283)
1.1 (0.043)
0.9 (0.035)
1.6 (0.063)
2.0 (0.079)
(ø4.2 (0.165))
ø0.81 (0.031)
4.25 (0.167)
5.35 (0.210)
5.25 (0.206)
ø0.73 (0.028)
4.15 (0.163)
0.65 (0.026)
0.45 (0.018)
OHAY0508
1.55 (0.061)
2 (0.079)
4 (0.157)
6.35 (0.250)
8 (0.315)
1.75 (0.069)
11.5 (0.453)
12.4 (0.488)
24 (0.945)
0.3 (0.012)
0.3 (0.012)
1.9 (0.075)
7.35 (0.289)
Cathode/Collector Side
Package Outlines
Korrosionsfestigkeit besser als EN 60068-2-60 (method 4):
mit erweitertem Korrosionstest: 40°C / 90%rh / 15ppm H2S / 336h
Corrosion robustness better than EN 60068-2-60 (method 4):
with enhanced corrosion test: 40°C / 90%rh / 15ppm H2S / 336h
SFH 4235
Kathodenkennung: Markierung Cathode mark: mark Gewicht / Approx. weight: 0.2 g

Gurtung / Polarität und Lage Verpackungseinheit 800/Rolle, ø180 mm Method of Taping / Polarity and Orientation Packing unit 800/reel, ø180 mm

1)
Maße in mm (inch) / Dimensions in mm (inch)
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Empfohlenes Lötpaddesign
Solder resist
Freies Kupfer
Bare Copper
Lötpasten Schablone Solder paste stencil
Lötstopplack
OHAY0681
0.3 (0.012)
Kupfer Copper
1.6 (0.063)
11.6 (0.457)
12.0 (0.472)
2.3 (0.091)
2.3 (0.091)
10 (0.394)
1.6 (0.063)
11.6 (0.457)
3 Lötstellen 3 solder points
Thermal enhanced PCB
Thermisch optimiertes PCB
ø4.0 (0.157) Heatsink attach
ø4.0 (0.157)
ø2.5 (0.098)
Achtung:
Anode und Heatsink sind elektrisch verbunden
Attention:
Anode and Heatsink are electrically connected
Footprint
Recommended Solder Pad Design
SFH 4235
2010-05-18 7
SFH 4235
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down 6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
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Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
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The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
1
, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2010-05-18 8
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