Leistungsstarke IR-Lumineszenzdiode
High Power Infrared Emitter
Lead (Pb) Free Product - RoHS Compliant
SFH 4200
SFH 4205
SFH 4200 SFH 4205
Wesentliche Merkmale
• Leistungsstarke GaAs-LED (35mW)
• Hoher Wirkunsgrad bei kleinen Strömen
• Homogene Abstrahlung
• Typische Peakwellenlänge 950nm
• IR Reflow und TTW Löten geeignet
Anwendungen
• Schnelle Datenübertragung mit
Übertragungsraten bis 100 Mbaud
Tastatur, Joystick, Multimedia)
(IR
• Analoge und digitale Hi-Fi Audio- und
Videosignalübertragung
• Alarm- und Sicherungssysteme
• IR-Scheinwerfer für Kameras
Typ
Type
Bestellnummer
Ordering Code
Strahlstärkegruppierung 1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping
Ie (mW/sr)
Features
• High Power GaAs-LED (35mW)
• High Efficiency at low currents
• Homogeneous Radiation Pattern
• Typical peak wavelength 950nm
• Suitable for IR reflow and TTW soldering
Applications
• High data transmission rate up to 100 Mbaud
keyboard, Joystick, Multimedia)
(IR
• Analog and digital Hi-Fi audio an d vi deo s ignal
transmission
• Alarm and safety equipment
• IR spotlight for cameras
1)
SFH 4200 Q65110A2494 10 (>4)
SFH 4205 Q65110A2498 10 (>4)
1)
gemessen bei einem Raumw ink el Ω = 0.01 sr / measu red at a solid angle of Ω = 0.01 sr
2005-02-25 1
Grenzwerte (TA = 25 °C) Maximum Ratings
SFH 4200, SFH 4205
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Durchlassstrom
Forward current
Stoßstrom, tp = 10 µs, D = 0
Surge current
Verlustleistung
Power dissipation
Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm
2
Thermal resistance junction - ambient mounted
2
on PC-board (FR4), padsize 16 mm
each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
Symbol
Symbol
T
; T
op
stg
V
R
I
(DC) 100 mA
F
I
FSM
P
tot
R
thJA
R
thJS
Wert
Value
– 40 … + 100 °C
3 V
2.2 A
180 mW
450
200
Einheit
Unit
K/W
K/W
2005-02-25 2
Kennwerte (TA = 25 °C) Characteristics
SFH 4200, SFH 4205
Bezeichnung
Parameter
Wellenlänge der Strahlung
Wavelength at peak emission
I
= 100 mA, tp = 20 ms
F
Spektrale Bandbreite bei 50% von I
Spectral bandwidth at 50% of I
IF = 100 mA, t
= 20 ms
p
max
max
Abstrahlwinkel
Half angle
Aktive Chipfläche
Active chip area
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
Schaltzeiten, Ie von 10% auf 90% und von 90%
I
auf 10%, bei
= 100 mA, tp = 20 ms, RL = 50 Ω
F
Switching times, Ιe from 10% to 90% and from
I
90% to10%,
= 100 mA, tp = 20 ms, RL = 50 Ω
F
Durchlassspannung
Forward voltage
I
= 100 mA, tp = 20 ms
F
I
= 1 A, tp = 100 µs
F
Sperrstrom
Reverse current
V
= 3 V
R
Gesamtstrahlungsfluss
Total radiant flux
I
= 100 mA, tp = 20 ms
F
Temperaturkoeffizient von Ie bzw. Φe,
I
= 100 mA
F
Temperature coefficient of Ie or Φe, IF = 100 mA
Symbol
Symbol
λ
peak
Wert
Value
Einheit
Unit
950 nm
∆λ 40 nm
ϕ ± 60 Grad
deg.
A
L × B
0.09 mm
0.3 × 0.3 mm
2
L × W
t
, t
r
V
V
I
R
Φ
TC
f
F
F
e
I
10 ns
1.5 (≤ 1.8)
3.2 (≤ 4.3)
V
V
0.01 (≤ 10) µA
35 mW
– 0.44 %/K
Temperaturkoeffizient von VF, IF = 100 mA
TC
Temperature coefficient of VF, IF = 100 mA
Temperaturkoeffizient von λ, IF = 100 mA
TC
Temperature coefficient of λ, IF = 100 mA
2005-02-25 3
V
λ
– 1.5 mV/K
+ 0.2 nm/K
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
SFH 4200, SFH 4205
Bezeichnung
Parameter
Strahlstärke
Radiant intensity
I
= 100 mA, tp = 20 ms
F
Strahlstärke
Radiant intensity
I
= 1 A, tp = 100 µs
F
Symbol Werte
Values
I
e min.
I
e typ.
I
e typ.
4
10
60 mW/sr
Einheit
Unit
mW/sr
mW/sr
2005-02-25 4
Relative Spectral Emissi on
I
= f (λ)
rel
100
Ι
erel
80
OHF00777
I
e
Radiant Intensity
I
e
100 mA
= f (I
F
Single pulse, tp = 20 µs
OHF00809
Ι
e
Ι
e (100 mA)
2
10
SFH 4200, SFH 4205
)
Max. Permissible Forward Current
I
= f (TA)
F
120
mA
Ι
F
100
OHF00359
60
40
20
0
850 900 950 1000 1100
Forward Current IF = f (VF)
single pulse, tp = 20 µs
4
10
mA
Ι
F
3
10
2
10
1
10
0
10
-1
10
OHF00784
0
10
-1
10
-2
10
-3
10
nm800
10 10110
23
10
λ
mA
Ι
40
10
F
80
60
40
20
0
0
20 40 60 80 100 120
R
thJA
= 375 K/W
˚C
T
A
Permissible Pulse Handling
I
Capability
= f (τ), TA = 25 °C,
F
duty cycle D = parameter
1
10
A
I
F
5
0
10
5
t
P
=
D
T
t
P
T
D
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
OHF00040
I
F
-2
10
-3
10
0
0.5 1 1.5 2 2.5 3 3.5 4.5
Radiation Characteristics I
V
V
F
rel
= f (ϕ
-1
10
-5
10
10-410-310-210-110010
0˚10˚20˚40˚ 30˚
ϕ
1.0
50˚
60˚
70˚
80˚
90˚
0.8
0.6
0.4
0.2
0
100˚
1.0 0.8 0.6 0.4
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
2005-02-25 5
1 2
t
p
OHL01660
10s
Maßzeichnung Package Outlines
SFH 4200
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
0.1 (0.004) (typ.)
SFH 4200, SFH 4205
2.1 (0.083)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
SFH 4205
3.0 (0.118)
3.4 (0.134)
Cathode marking
2.8 (0.110)
Cathode
(2.4 (0.094))
2.4 (0.094)
2.54 (0.100)
spacing
(2.4) (0.095)
3.7 (0.146)
0.18 (0.007)
0.12 (0.005)
1.1 (0.043)
0.9 (0.035)
Anode
4˚±1
3.3 (0.130)
0.5 (0.020)
1.1 (0.043)
4.2 (0.165)
3.8 (0.150)
0.7 (0.028)
(2.85 (0.112))
A
C
0.6 (0.024)
0.4 (0.016)
GPLY6724
Cathode marking
(2.9 (0.114))
(1.4 (0.055))
(R1)
4.2 (0.165)
3.8 (0.150)
(0.3 (0.012))
3.4 (0.134)
3.8 (0.150)
AC
GPLY6880
Maße werden wie folgt ange geben: mm (inch) / Dimensions are specified as follows: mm (inch)
2005-02-25 6
Empfohlenes Lötpaddesign IR-Reflow Löten
Recommended Solder Pad IR Reflow Soldering
SFH 4200
2.6 (0.102)
2.6 (0.102)
SFH 4200, SFH 4205
SFH 4205
1.5 (0.059)
Padgeometrie für
verbesserte Wärmeableitung
Paddesign for
improved heat dissipation
4.5 (0.177)
Padgeometrie
für verbesserte
Wärmeableitung
Lötstopplack
Solder resist
3.7 (0.146)
3.0 (0.118)
1.2 (0.047)
4.5 (0.177)
1.5 (0.059)
Cu-Fläche > 16 mm
Cu-area > 16 mm
2
2
OHLPY970
Paddesign
for improved
heat dissipation
Cu-Fläche > 16 mm
Cu-area > 16 mm
2
2
Lötstopplack
Solder resist
OHLPY965
Maße werden wie folgt ange geben: mm (inch) / Dimensions are specified as follows: mm (inch)
2005-02-25 7
SFH 4200, SFH 4205
Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
300
˚C
250
T
255 ˚C
240 ˚C
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
217 ˚C
200
150
120 s max
100
min. condition for IR Re f low Solderin g:
solder point temperature ≥ 235 °C for at least 10 sec.
50
Ramp Up
3 K/s (max)
25 ˚C
0
0
50 100 150 200 250 300
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
30 s max
100 s max
260 ˚C
245 ˚C
235 ˚C
10 s min
Ramp Down
6 K/s (max)
t
OHLA0687
+0 ˚C
-5 ˚C
±5 ˚C
+5 ˚C
-0 ˚C
s
300
C
250
T
200
150
100
235 C
CC... 130100
50
0
0
C... 260
1. Welle
1. wave
ca 200 K/s
50 100 150 200 250
2 K/s
10 s
5 K/s
Zwangskühlung
forced cooling
2005-02-25 8
2. Welle
2. wave
OHLY0598
Normalkurve
standard curve
Grenzkurven
limit curves
2 K/s
s
t
SFH 4200, SFH 4205
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be c ons idered as assured characteristics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances . For in fo rmation on the types in question pleas e c ont ac t our Sales Organization.
Packing
Please use the recycling operators k nown to you . We can als o help you – get in touch wit h your near est sales offic e.
By agreement we will take p acking material back, if it is sorted. You m ust bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-su pport devices or systems must be expressly authorized fo r such purpose! Critical
components
1
A critical component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
1
, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intend ed (a) to be impl anted i n t he human b ody , or (b ) to supp ort a nd/or ma inta in
and sustain human life. If th ey fail , it is rea so nable to assume that the health of the user m ay be endangered.
2005-02-25 9
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