OSRAM SFH 4050 Technical data

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm)
Lead (Pb) Free Product - RoHS Compliant
SFH 4050
Für Neuentwicklungen / for new designs
Vorläufige Daten / Preliminary Data

Wesentliche Merkmale

Sehr kleines Gehäuse: (LxBxH) 1.7 mm x 0.8 mm x 0.65 mm
Emissionswellenlänge typ. 850 nm
Gegurtet lieferbar
Sehr hohe Gesamtleistung

Anwendungen

Miniaturlichtschranken
Industrieelektronik
„Messen/Steuern/Regeln“
Sensorik
Alarm- und Sicherungssysteme
IR-Freiraumübertragung

Sicherheitshinweise

Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare Infrarot­Strahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheits­richtlinien der IEC-Normen 60825-1 und 62471 behandelt werden.

Features

Very small package: (LxWxH) 1.7 mm x 0.8 mm x 0.65 mm
Peak wavelength typ. 850 nm
Available on tape and reel
High optical total power

Applications

Miniature photointerrupters
Industrial electronics
For drive and control circuits
Sensor technology
Alarm and safety equipment
IR free air transmission

Safety Advices

Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471.
Typ Type
SFH 4050 Q65110A6460 4 (typ. 7)
1)
gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr
ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device
2007-04-02 1
Bestellnummer Ordering Code
Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping
Ie (mW/sr)
1)

Grenzwerte (TA = 25 °C) Maximum Ratings

SFH 4050
Bezeichnung Parameter
Betriebs- und Lagertemperatur Operating and storage temperature range
Sperrspannung Reverse voltage
Vorwärtsgleichstrom Forward current
Stoßstrom, tp = 200 µs, D = 0 Surge current
Verlustleistung Power dissipation
Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 5 mm
2
Thermal resistance junction - ambient mounted
2
on PC-board (FR4), padsize 5 mm
each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block
Symbol Symbol
Top , T
V
I
I
P
R
stg
R
F
FSM
tot
thJA
R
thJS
Wert Value
Einheit Unit
– 40 + 100 °C
5 V
100 mA
1 A
180 mW
450
250
K/W
K/W

Kennwerte (TA = 25 °C) Characteristics

Bezeichnung Parameter
Wellenlänge der Strahlung Wavelength at peak emission
I
= 100 mA
F
Spektrale Bandbreite bei 50% von I Spectral bandwidth at 50% of I
max
max
IF = 100 mA
Abstrahlwinkel Half angle
Aktive Chipfläche Active chip area
Abmessungen der aktiven Chipfläche Dimension of the active chip area
Symbol Symbol
λ
peak
Wert Value
Einheit Unit
850 nm
∆λ 35 nm
ϕ ± 80 Grad
deg.
A
L × B
0.09 mm
0.3 × 0.3 mm²
2
L × W
2007-04-02 2
Kennwerte (TA = 25 °C) Characteristics (cont’d)
SFH 4050
Bezeichnung Parameter
Schaltzeiten, Ie von 10% auf 90% und von 90%
I
auf 10%, bei
= 100 mA, RL = 50
F
Switching times, Ιe from 10% to 90% and from
I
90% to 10%,
= 100 mA, RL = 50
F
Kapazität, Capacitance
V
= 0 V, f = 1 MHz
R
Durchlassspannung Forward voltage
I
= 100 mA, tp = 20 ms
F
I
= 1 A, tp = 100 µs
F
Sperrstrom Reverse current
V
= 5 V
R
Gesamtstrahlungsfluss Total radiant flux
I
= 100 mA, tp = 20 ms
F
Temperaturkoeffizient von Ie bzw. Φe,
I
= 100 mA
F
Temperature coefficient of Ie or Φe, IF = 100 mA
Symbol Symbol
t
, t
r
f
C
o
V
F
V
F
I
R
Φ
e typ
TC
I
Wert Value
Einheit Unit
12 ns
15 pF
1.5 (< 1.8)
2.4 (< 3.0)
not designed for
V V
µA reverse operation
50 mW
– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
TC
Temperature coefficient of VF, IF = 100 mA
Temperaturkoeffizient von λ, IF = 100 mA
TC
Temperature coefficient of λ, IF = 100 mA
2007-04-02 3
V
λ
– 0.7 mV/K
+ 0.2 nm/K
SFH 4050
Strahlstärke Ie in Achsrichtung
1)
gemessen bei einem Raumwinkel = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of = 0.01 sr
Bezeichnung
Symbol Werte
Parameter
SFH 4050-P SFH 4050-Q
Strahlstärke Radiant intensity
I
= 100 mA, tp = 20 ms
F
Strahlstärke
I
e min
I
e max
I
e typ
4 8
50 70 mW/sr
Radiant intensity
I
= 1 A, tp = 100 µs
F
1)
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) /
Only one group in one packing unit (variation lower 2:1)
Abstrahlcharakteristik Radiation Characteristics I
50˚
rel
ϕ
= f (ϕ)
10˚20˚30˚40˚
1.0
0.8
OHF00614
Values
6.3
12.5
Einheit Unit
mW/sr mW/sr
60˚
70˚
80˚
90˚
100˚
0.6
0.4
0.2
0
20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0
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Relative Spectral Emission
I
= f (λ)
rel
100
%
I
rel
80
60
40
20
OHL01714
I
e
Radiant Intensity
I
e
100 mA
= f (I
F
Single pulse, tp = 20 µs
OHL01715
I
I
e (100 mA)
1
10
e
0
10
5
-1
10
5
-2
10
5
SFH 4050
)
Max. Permissible Forward Current
I
= f (TA), R
F
120
Ι
F
100
80
60
40
20
= 450 K/W
thJA
R
thjA
OHR00883
= 450 K/W
0
700
Forward Current IF = f (VF) Single pulse, tp = 20 µs
0
10
A
I
F
-1
10
5
-2
10
5
-3
10
5
-4
10
0
0.5 1 1.5 2 2.5 V3
nm
950750 800 850
λ
OHL01713
V
F
-3
10
0
10
1
10
2
10
Permissible Pulse Handling Capability
I
= f (τ), TA = 25 °C,
F
duty cycle D = parameter
t
T
P
=
OHF02506
t
P
T
10 10s10
1.2 A
I
F
D
=
1.0
D
0.8
0.005
0.01
0.02
0.6
0.033
0.05
0.1
0.2
0.4
0.5 1
0.2
0
1010 1010 10
I
mA
F
t
0
0
3
1055
I
F
210-1-2-3-4-5
p
20 40 60 80 100 120mA˚C
T
A
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Maßzeichnung Package Outlines

SFH 4050
0.8 (0.031)
±0.1 (0.004)
Package
0.125 (0.005)
7˚ max
±0.1 (0.004)
1.7 (0.067)
marking
0.7 (0.028)
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse / Package Epoxydharz, diffus / Epoxy, diffuse
Farbe / Colour Farblos / colourless
±0.05 (0.002)
0.65 (0.026)
+0.05 (0.002)
-0.03 (0.001)
Package marking
+0.02 (0.001)
-0.05 (0.002)
±0.1 (0.004)
1.3 (0.051)
GPLY7036
Gehäusemarkierung/
Anode
Package marking

Empfohlenes Lötpaddesign Reflow Löten Recommended Solder Pad Design Reflow Soldering

0.7 (0.028)
0.8 (0.031)
0.8 (0.031)
Maße in mm (inch) / Dimensions in mm (inch).
0.8 (0.031)
OHAPY606
2007-04-02 6
SFH 4050

Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten (nach J-STD-020C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)

300
˚C
250
T
255 ˚C 240 ˚C
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
217 ˚C
200
10 s min
30 s max
150
120 s max
100 s max
Ramp Down 6 K/s (max)
100
Ramp Up
50
3 K/s (max)
25 ˚C
0
0
50 100 150 200 250 300
t

Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802)

OHLA0687
260 ˚C 245 ˚C 235 ˚C
+0 ˚C
-5 ˚C ±5 ˚C
+5 ˚C
-0 ˚C
s
300
C
250
T
235 C
200
150
100
50
0
0
C... 260
1. Welle
1. wave
ca 200 K/s
CC... 130100
50 100 150 200 250
10 s
Zwangskühlung
2 K/s
forced cooling
5 K/s
2007-04-02 7
2. Welle
2. wave
OHLY0598
Normalkurve standard curve
Grenzkurven limit curves
2 K/s
s
t
SFH 4050
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2007-04-02 8
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