NPN-Silizium-Fototransistor im SMT SIDELED
Silicon NPN Phototransistor in SMT SIDELED
Lead (Pb) Free Product - RoHS Compliant
SFH 325
SFH 325 FA
SFH 325 SFH 325 FA
®
-Gehäuse
®
-Package
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 450 nm bis 1120 nm (SFH 325) und bei
750 nm bis 1120 nm (SFH 325 FA)
• Hohe Linearität
• P-LCC-2 Gehäuse
• Gruppiert lieferbar
• Nur für Reflow IR-Lötung geeignet.
Anwendungen
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
SFH 325
SFH 325-3
SFH 325-3/-4
SFH 325-4
SFH 325 FA
1)
1)
1)
1)
1)
SFH 325 FA-3
SFH 325 FA-3/-4
SFH 325 FA-4
1)
1)
Bestellnummer
Ordering Code
Q65110A2486 > 16
Q65110A2488 25-50
Q65110A2491 25-80
Q65110A2484 40-80
Q65110A2487 > 16
Q65110A2482 25-50
1)
Q65110A2490 25-80
Q65110A2485 40-80
Features
• Especially suitable for applications from
450 nm to 1120 nm (SFH 325) and from
750 nm to 1120 nm (SFH 325 FA)
• High linearity
• P-LCC-2 package
• Available in groups
• Suitable only for reflow IR soldering.
Applications
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
Fotostrom , (Ee=0,1mW/cm
2
,λ=950nm V
Photocurrent
µA)
Ipce (
= 5 V)
CE
1)
Gruppierung erfolgt in Halbgruppen (siehe Seite 4), Verpackungseinheit = nur eine Halbgruppe / binning in half
groups (see page 4), packing unit = only one half group
2005-07-12 1
Grenzwerte
Maximum Ratings
SFH 325, SFH 325 FA
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Kollektor-Emitterspannung
Collector-emitter voltage
Kollektorstrom
Collector current
Kollektorspitzenstrom, τ < 10 µs
Collector surge current
Verlustleistung,
T
= 25 ° C
A
Total power dissipation
Wärmewiderstand für Montage auf PC-Board
Thermal resistance for mounting on pcb
Symbol
Symbol
T
; T
op
stg
V
CE
I
C
I
CS
P
tot
R
thJA
Wert
Value
Einheit
Unit
– 40 … + 100 ° C
35 V
15 mA
75 mA
165 mW
450 K/W
2005-07-12 2
Kennwerte (TA = 25 ° C, λ = 950 nm)
Characteristics
SFH 325, SFH 325 FA
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von S
max
Spectral range of sensitivity
S = 10% of S
Bestrahlungsempfindliche Fläche
max
(∅
220 µm)
Radiant sensitive area
Abmessung der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
V
Kapazität,
= 0 V, f = 1 MHz, E = 0
CE
Capacitance
Dunkelstrom
Dark current
V
= 20 V, E = 0
CE
Symbol
Symbol
Wert
Value
Einheit
Unit
SFH 325 SFH 325 FA
λ
S max
980 980 nm
λ 450 … 1120 750 … 1120 nm
A
L × B
× W
L
0.038 0.038 mm
0.45 × 0.45 0.45 × 0.45 mm × mm
ϕ±60 ±60 Grad
deg.
C
I
CEO
CE
5.0 5.0 pF
1 (≤ 50) 1 (≤ 50) nA
2
2005-07-12 3
SFH 325, SFH 325 FA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Fotostrom, λ = 950 nm
Photocurrent
E
= 0.1 mW/cm2, VCE = 5 V
e
SFH 325:
E
= 1000 Ix,
v
Normlicht/standard light A,
V
= 5 V
CE
Anstiegszeit/Abfallzeit
Rise and fall time
I
= 1 mA, VCC = 5 V, RL = 1 kΩ
C
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
= I
C
E
= 0.1 mW/cm
e
1)
I
PCEmin
1)
I
PCEmin
1)
PCEmin
× 0.3,
2
ist der minimale Fotostrom der jeweiligen Gruppe.
is the min. photocurrent of the specified group.
Symbol
Symbol
I
PCE min
I
PCE max
I
PCE
t
, t
r
f
V
CEsat
Wert
Value
-2A -2B -3A -3B -4A -4B
16
25
360
20
32
450
25
40
570
32
50
720
40
63
900
50
80
1140
667788µs
150 150 150 150 150 150 mV
Einheit
Unit
µA
µA
µA
Directional Characteristics S
40 30 20 10
50
60
70
80
90
100
2005-07-12 4
ϕ
= f (ϕ)
rel
0
1.0
0.8
0.6
0.4
0.2
0
0
20 40 60 80 100 1200.40.60.81.0
OHF01402
SFH 325, SFH 325 FA
Relative Spectral Sensitivity,
SFH 325
S
= f (λ)
rel
100
%
S
rel
80
70
60
50
40
30
20
10
0
400
500 600 700 800 900 1100
OHF00207
nm
λ
Total Power Dissipation
P
= f (TA)
tot
200
mW
P
tot
160
120
80
OHF00871
Relative Spectral Sensitivity,
SFH 325 FA
100
S
rel
%
80
60
40
20
0
400
S
rel
= f (λ)
OHF00468
nm500 600 700 800 900 1100
λ
Photocurrent
I
= f (VCE), Ee = Parameter
PCE
0
10
mA
Ι
PCE
-1
10
0.5
0.25
0.1
mW
1
cm
mW
cm
mW
cm
mW
cm
OHF01529
2
2
2
2
Photocurrent
I
= f (Ee), VCE = 5 V
PCE
3
10
µ
A
Ι
PCE
2
10
1
10
0
10
-1
10
-3
10
Dark Current
I
= f (VCE), E = 0
CEO
1
10
nA
Ι
CEO
0
10
-1
10
OHF01924
4
3
2
mW/cm
2
E
10
e
OHF01527
0
-2
10
40
0
20 40 60 80 ˚C 100
0
Dark Current
I
= f (TA), V
CEO
3
10
Ι
CEO
2
10
1
10
0
10
-1
10
-25nA0 25 50 75 100
= 5 V, E = 0
CE
T
A
OHF01530
˚C
T
A
-2
10
0
5 10 15 20 25 30 35
Capacitance
C
= f (VCE), f = 1 MHz, E = 0
CE
5.0
C
pF
CE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
-2
10
10-110010110
V
V
CE
OHF01528
V
V
CE
-2
10
-3
10
0 5 10 15 20 25 30 35V
V
CE
Photocurrent
1.6
25
1.4
1.2
1.0
0.8
0.6
0.4
0.2
o
= f (TA), V
0
-25
0 25 50 75 100
CE
= 5 V
OHF01524
C
T
A
I
PCE/IPCE25
Ι
PCE
Ι
PCE
2
2005-07-12 5
Maßzeichnung
Package Outlines
2.8 (0.110)
Collector
(2.4 (0.094))
2.4 (0.094)
2.54 (0.100)
spacing
4.2 (0.165)
3.8 (0.150)
1.1 (0.043)
0.9 (0.035)
Emitter
0.7 (0.028)
(2.85 (0.112))
SFH 325, SFH 325 FA
Collector marking
(2.9 (0.114))
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
(1.4 (0.055))
(R1)
4.2 (0.165)
3.8 (0.150)
(0.3 (0.012))
3.4 (0.134)
3.8 (0.150)
GPLY6068
2005-07-12 6
Empfohlenes Lötpaddesign
Recommended Solderpad Design
Padgeometrie
für verbesserte
Wärmeableitung
Paddesign
for improved
heat dissipation
SFH 325, SFH 325 FA
3.7 (0.146)
3.0 (0.118)
1.2 (0.047)
Cu-Fläche > 16 mm
Cu-area > 16 mm
2
2
Lötstopplack
Solder resist
OHLPY965
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2005-07-12 7
SFH 325, SFH 325 FA
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
300
˚C
250
T
255 ˚C
240 ˚C
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
217 ˚C
200
30 s max
150
120 s max
100 s max
100
Ramp Up
50
3 K/s (max)
25 ˚C
0
0
50 100 150 200 250 300
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
260 ˚C
245 ˚C
235 ˚C
10 s min
Ramp Down
6 K/s (max)
t
OHLA0687
+0 ˚C
-5 ˚C
±5 ˚C
+5 ˚C
-0 ˚C
s
300
C
250
T
200
150
100
235 C
CC... 130100
50
0
0
C... 260
1. Welle
1. wave
ca 200 K/s
50 100 150 200 250
2 K/s
10 s
5 K/s
Zwangskühlung
forced cooling
2005-07-12 8
2. Welle
2. wave
OHLY0598
Normalkurve
standard curve
Grenzkurven
limit curves
2 K/s
s
t
SFH 325, SFH 325 FA
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
1
, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2005-07-12 9
Loading...