Silizium-PIN-Fotodiode
Silicon PIN Photodiode
Lead (Pb) Free Product - RoHS Compliant
BP 104 S
BP 104 S
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm
• Kurze Schaltzeit (typ. 20 ns)
• Geeignet für Vapor-Phase Löten und
IR-Reflow-Löten
•SMT-fähig
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BP 104 S Q65110A2626
Bestellnummer
Ordering Code
Features
• Especially suitable for applications from
400 nm to 1100 nm
• Short switching time (typ. 20 ns)
• Suitable for vapor-phase and IR-reflow
soldering
• Suitable for SMT
Applications
• Photointerrupters
• IR remote controls
• Industrial electronics
• For control and drive circuits
2005-03-02 1
Grenzwerte
Maximum Ratings
BP 104 S
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
= 25 ° C
A
Total power dissipation
T
Kennwerte (
Characteristics (
= 25 ° C, Normlicht A, T = 2856 K)
A
T
= 25 ° C, standard light A, T = 2856 K)
A
Bezeichnung
Parameter
V
Fotostrom
= 5 V
R
Photocurrent
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von S
max
Spectral range of sensitivity
S = 10% of S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Symbol
Symbol
T
; T
op
stg
V
R
P
tot
Symbol
Symbol
I
P
λ
S max
Wert
Value
Einheit
Unit
–40…+100 ° C
20 V
150 mW
Wert
Value
Einheit
Unit
55 (≥ 40) nA/lx
850 nm
λ 400 … 1100 nm
A 4.84 mm
2
Abmessung der bestrahlungsempfindlichen
L × B
Fläche
Dimensions of radiant sensitive area
Halbwinkel
L
ϕ±60 Grad
Half angle
Dunkelstrom,
V
= 10 V
R
I
Dark current
Spektrale Fotoempfindlichkeit, λ =850nm
S
Spectral sensitivity
Quantenausbeute, λ =850nm
η 0.90 Electrons
Quantum yield
Leerlaufspannung,
E
=1000lx
V
V
Open-circuit voltage
2005-03-02 2
× W
R
λ
O
2.20 × 2.20 mm × mm
deg.
2 (≤ 30) nA
0.62 A/W
Photon
360 (≥ 280) mV
Kennwerte (TA = 25 ° C, Normlicht A, T = 2856 K)
T
Characteristics (
= 25 ° C, standard light A, T = 2856 K) (cont’d)
A
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
BP 104 S
Einheit
Unit
Kurzschlussstrom, EV= 1000 lx
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
= 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
L
Durchlassspannung,
I
= 100 mA, E = 0
F
Forward voltage
Kapazität,
V
R
= 0 V,
= 1 MHz, E = 0
f
Capacitance
Temperaturkoeffizient von
Temperature coefficient of V
Temperaturkoeffizient von
Temperature coefficient of I
V
O
O
I
SC
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
= 10 V, λ = 850 nm
R
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit
I
SC
t
, t
r
V
F
C
0
TK
V
TK
I
NEP
f
50 µA
20 ns
1.3 V
48 pF
– 2.6 mV/K
0.18 %/K
3.6 × 10
D* 6.1 × 10
–14
12
W
-----------Hz
cm Hz×
--------------------------W
2005-03-02 3
BP 104 S
Relative Spectral Sensitivity
S
= f (λ)
rel
100
S
rel
%
80
60
40
20
0
500 600 700 800 900 nm 1100
400
OHF00078
λ
Dark Current
I
= f (VR), E = 0
R
2
10
nA
Ι
R
1
10
OHF02284
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage
10
µ
Ι
P
2
10
1
10
0
10
-1
10
10
1
0
10
V
= f (Ev)
O
OHF02283
43
10
mVA
3
10
V
O
Ι
P
3
2
10
10
2
10
1
10
0
10
4
lx
10
E
V
Capacitance
C = f (V
), f = 1 MHz, E = 0
R
60
pF
50
40
30
OHF01778
Total Power Dissipation
P
= f (TA)
tot
160
V
O
mW
P
tot
140
120
100
80
60
40
20
0
0
20 40 60 80 ˚C 100
OHF00958
T
A
Dark Current
I
= f (TA), VR = 10 V, E = 0
R
3
10
nA
Ι
R
OHF00082
2
10
1
10
0
10
-1
10
0
2 4 6 8 10 12 14 16 V 20
V
Birectional Characteristics
S
= f (ϕ)
rel
40 30 20 10
50
60
70
80
90
100
20
10
0
10
0
-2
10C10-1100101102V
R
0
ϕ
1.0
0.8
0.6
0.4
0.2
0
20 40 60 80 100 1200.40.60.81.0
0
V
R
OHF01402
-1
10
0
20 40 60 80 ˚C 100
T
A
2005-03-02 4
Maßzeichnung
Package Outlines
BP 104 S
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...0.1
4.5 (0.177)
4.3 (0.169)
0.9 (0.035)
Photosensitive area Cathode lead
2.20 (0.087) x 2.20 (0.087)
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Chip position
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
0.7 (0.028)
1.1 (0.043)
0.9 (0.035)
0...5˚
1.6 (0.063)
±0.2 (0.008)
1.7 (0.067)
GEOY6861
0.2 (0.008)
0.1 (0.004)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
2005-03-02 5
BP 104 S
Lötbedingungen Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
300
˚C
250
T
255 ˚C
240 ˚C
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
217 ˚C
200
10 s min
OHLA0687
260 ˚C
245 ˚C
235 ˚C
+0 ˚C
-5 ˚C
±5 ˚C
+5 ˚C
-0 ˚C
30 s max
150
120 s max
100 s max
Ramp Down
6 K/s (max)
100
Ramp Up
50
3 K/s (max)
25 ˚C
0
0
50 100 150 200 250 300
s
t
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
Attention please! The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may
contain dangerous substances. For information on the types in question please contact our Sales
Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2005-03-02 6
1
, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
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