Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT
Silicon Pin Photodiode with Daylight Filter; in SMT
Lead (Pb) Free Product - RoHS Compliant
BP 104 F
BP 104 FS
BP 104 F BP 104 FS
Wesentliche Merkmale
• Speziell geeignet für Anwendungen bei 950 nm
• Kurze Schaltzeit (typ. 20 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
• BP 104 FS: geeignet für Vapor-Phase Löten
und IR-Reflow Löten
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Gerätefernsteuerungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
Typ
Type
BP 104 F Q62702-P0084
BP 104 FS Q62702-P2627
Bestellnummer
Ordering Code
Features
• Especially suitable for applications of 950 nm
• Short switching time (typ. 20 ns)
• DIL plastic package with high packing density
• BP 104 FS: suitable for vapor-phase and
IR-reflow soldering
Applications
• IR remote control of hi-fi and TV sets, video
tape recorders, dimmers, remote controls of
various equipment
• Photointerrupters
2005-03-14 1
Grenzwerte
Maximum Ratings
BP 104 F, BP 104 FS
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
= 25 ° C
A
Total power dissipation
Kennwerte (T
= 25 ° C, λ = 950 nm)
A
Characteristics
Bezeichnung
Parameter
Fotostrom
Photocurrent
V
= 5 V, Ee = 1 mW/cm
R
2
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Symbol
Symbol
T
; T
op
stg
V
R
P
tot
Symbol
Symbol
I
P
λ
S max
Wert
Value
Einheit
Unit
– 40 … + 100 ° C
20 V
150 mW
Wert
Value
Einheit
Unit
34 (≥ 25) µA
950 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10 % von S
max
Spectral range of sensitivity
S = 10 % of S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area
Halbwinkel
Half angle
Dunkelstrom,
V
= 10 V
R
Dark current
Spektrale Fotoempfindlichkeit
Spectral sensitivity
Quantenausbeute
Quantum yield
Leerlaufspannung,
E
= 0.5 mW/cm
e
2
Open-circuit voltage
λ 800 … 1100 nm
A
L × B
× W
L
4.84 mm
2.20 × 2.20 mm × mm
2
ϕ±60 Grad
deg.
I
R
S
λ
2 (≤ 30) nA
0.70 A/W
η 0.90 Electrons
Photon
V
O
330 (≥ 250) mV
2005-03-14 2
Kennwerte (TA = 25 ° C, λ = 950 nm)
Characteristics (cont’d)
BP 104 F, BP 104 FS
Bezeichnung
Parameter
Kurzschlussstrom, Ee = 0.5 mW/cm
2
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
= 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
L
Durchlassspannung,
I
= 100 mA, E = 0
F
Forward voltage
Kapazität,
V
R
= 0 V,
= 1 MHz, E = 0
f
Capacitance
Temperaturkoeffizient von
Temperature coefficient of V
Temperaturkoeffizient von
Temperature coefficient of I
V
O
O
I
SC
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
= 10 V
R
Nachweisgrenze, VR = 10 V
Detection limit
Symbol
Symbol
I
SC
t
, t
r
f
V
F
C
0
TC
V
TC
I
NEP
Wert
Value
17 µA
20 ns
1.3 V
48 pF
– 2.6 mV/K
0.18 %/K
3.6 × 10
D* 6.1 × 10
–14
12
Einheit
Unit
W
-----------Hz
cm Hz×
--------------------------W
2005-03-14 3
BP 104 F, BP 104 FS
Relative Spectral Sensitivity
S
= f (λ)
rel
100
S
rel
%
80
60
40
20
0
800 900 1000 1200
700
OHF00368
nm
λ
Dark Current
IR = f (V
), E = 0
R
4000
pA
Ι
R
3000
2000
OHFD1781
Photocurrent I
Open-Circuit Voltage
34
10
µ
AmV
Ι
P
2
10
1
10
0
10
-1
10
0
10
Capacitance
C = f (V
), f = 1 MHz, E = 0
R
60
pF
50
40
P
10110
= f (E
V
O
Ι
P
2
), VR = 5 V
e
VO = f (E
OHF01056
2
10
W/cm
µ
E
e
OHF01778
Total Power Dissipation
)
e
10
V
3
10
2
10
1
10
0
10
4
P
= f (T
tot
O
P
)
A
160
mW
tot
140
120
100
80
60
40
20
0
0
20 40 60 80 ˚C 100
Dark Current
IR = f (T
), VR = 10 V, E = 0
A
3
10
nA
Ι
R
2
10
30
1
10
OHF00958
T
A
OHF00082
1000
0
5 10 15 20
0
V
Directional Characteristics
S
= f (ϕ)
rel
40 30 20 10
50
60
70
80
90
100
20
10
0
10
0
V
R
0
ϕ
1.0
0.8
0.6
0.4
0.2
0
0
-2
10C10-1100101102V
20 40 60 80 100 1200.40.60.81.0
V
R
OHF01402
-1
10
0
20 40 60 80 ˚C 100
T
A
2005-03-14 4
Maßzeichnung
Package Outlines
BP 104 F, BP 104 FS
BP 104 F
Cathode marking
4.0 (0.157)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
0.5 (0.020)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
1.8 (0.071)
Approx. weight 0.1 g
3.7 (0.146)
1.2 (0.047)
1.4 (0.055)
Photosensitive area
2.20 (0.087) x 2.20 (0.087)
5.4 (0.213)
4.9 (0.193)
0.8 (0.031)
0.35 (0.014)
0.2 (0.008)
0.7 (0.028)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
0 ... 5˚
5.08 (0.200)
spacing
Chip position
4.5 (0.177)
4.3 (0.169)
1.9 (0.075)
2.2 (0.087)
0.6 (0.024)
0.4 (0.016)
3.0 (0.118)
3.5 (0.138)
GEOY6075
BP 104 FS
1.2 (0.047)
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
1.1 (0.043)
(0...0.004)
0...0.1
4.5 (0.177)
4.3 (0.169)
0.9 (0.035)
Photosensitive area Cathode lead
2.20 (0.087) x 2.20 (0.087)
Chip position
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
0.7 (0.028)
1.1 (0.043)
0.9 (0.035)
0...5˚
1.6 (0.063)
±0.2 (0.008)
1.7 (0.067)
GEOY6861
0.2 (0.008)
0.1 (0.004)
4.0 (0.157)
1.5 (0.059)
3.7 (0.146)
2005-03-14 5
BP 104 F, BP 104 FS
Lötbedingungen BP 104 FS Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
300
˚C
250
T
255 ˚C
240 ˚C
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
217 ˚C
200
30 s max
150
120 s max
100 s max
100
Ramp Up
50
3 K/s (max)
25 ˚C
0
0
50 100 150 200 250 300
Wellenlöten (TTW) BP 104 F (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
300
C
250
T
235 C
200
150
CC... 130100
100
50
C... 260
1. Welle
1. wave
ca 200 K/s
10 s
Zwangskühlung
2 K/s
forced cooling
5 K/s
2. Welle
2. wave
Normalkurve
standard curve
Grenzkurven
limit curves
2 K/s
260 ˚C
245 ˚C
235 ˚C
10 s min
Ramp Down
6 K/s (max)
t
OHLA0687
+0 ˚C
-5 ˚C
±5 ˚C
+5 ˚C
-0 ˚C
s
OHLY0598
0
0
50 100 150 200 250
2005-03-14 6
s
t
BP 104 F, BP 104 FS
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
Attention please! The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
1
, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2005-03-14 7
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