OPTEK HCT7000MTXV, HCT7000MTX, HCT7000M Datasheet
Prod uct Bul le tin HCT7000M
Janu ary 1996
N- Channel En hance ment Mode MOS Tran sis tor
Type HCT7000M, HCT7000MTX, HCT7000MTXV
Fea tures
• 200mA I
D
• Ultra small surface mount package
• R
DS(ON)
< 5Ω
• Pin-out compatible with most SOT23
MOSFETS
De scrip tion
The HCT7000M is a high performance
enhancement mode N-channel MOS
transistor chip packaged in the ultra
small 3 pin ceramic LCC package.
Electrical characteristics are similar to
those of the JEDEC 2N7000. The pinout and footprint matches that of most
enhancement mode MOS transistors
built in SOT23 plastic packages.
The HCT7000M is available processed
to TX and TXV levels per MIL-PRF-
19500. Order HCT7000MTX or
HCT7000MTXV. Typical screening and
lot acceptance tests are provided on
page 13-4. TX and TXV products
receive a VGS HTRB at 24 V for 48 hrs.
at 150o C and a VDS HTRB at 48 V for
260 hrs. at 150o C.
Ab so lute Maxi mum Rat ings
Drain- Source Volt age . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate- Source Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40 V
Drain Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Power Dis si pa tion (TA = 25o C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Power Dis si pa tion (T
Op er at ing and Stor age Tem pera ture . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C
Ther mal Re sis tance R
Ther mal Re sis tance R
Notes:
(1) TS = Substrate temperature that the chip carrier is mounted on.
(2) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measurable as an outgoing test.
(1)
= 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
S
∅JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 583o C/W
∅JA
(2)
100o C/W
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
15-36
Types HCT7000M, HCT7000MTX, HCT7000MTXV
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
SYM BOL PA RAME TER MIN MAX UNITS TEST CON DI TION
V
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
V
DS(ON)
G
C
C
C
t(on)
t
DSS
iss
oss
rss
(off)
Drain-Source Voltage 60 V
VGS = 0 V, ID = 10 µA
Gate Threshold Voltage .8 3.0 V VDS = VGS, ID = 1 mA
Gate Leakage
±10
Zero Gate Voltage Drain Current 1
nA
VDS = 0 V, VGS = ±15 V
µ
A VGS = 0 V, VDS = 48 V
On-State Drain Current 75 mA VDS = 10 V, VGS = 4.5 V
Drain-Source on-Resistance 5
Ω
VGS = 10 V, ID = 0.5 A
Drain-Source on-Voltage 2.5 V VGS = 10 V, ID = 0.5 A
Forward Transconductance 100 mS VDS = 10 V, ID = 0.2 A
fs
Input Capacitance 60 pF VDS = 25 V, VGS = 0 V, f = 1MHz
Output Capacitance 25 pF
Reverse Transfer Capacitance 5 pF
Turn-on Time 10 ns
VDD = 15 V, ID = 0.5 A, V
Turn-off Time 10 ns
= 10 V, Rg = 25 Ω
gen
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
15-37
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