OPTEK 4N24AU, 4N23AU, 4N22AU Datasheet
Fea tures
• JANTX, JANTXV qualified per MIL-
PRF-19500/486
• Surface Mountable
• 1 kV Electrical Isolation
• Base contact provided for
conventional transistor biasing
De scrip tion
The 4N22AU, 4N23AU, and 4N24AU
series are DESC qualified, surface
mount optically coupled isolators. High
reliability processing on the devices is
performed in accordance with MIL-PRF19500/486.
Each device in the series consists of an
infrared emitting diode and an NPN
silicon phototransistor mounted in a
hermetically sealed ceramic surface
mount package.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is VCE = 10 V, IF = 40
mA, PD = 275 mW, TA = 25o C. Refer to
MIL-PRF-19500/486 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Input- to- Output Iso la tion Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 1.0 kVDC
(1)
Stor age and Op er at ing Tem pera ture Range. . . . . . . . . . . . . . . . . . -65o C to +125o C
Sol der ing Tem pera ture (va por phase re flow). . . . . . . . . . . . . . . . . . . . . . . . . . 215o C
Sol der ing Tem pera ture (heated collet for 5 sec) . . . . . . . . . . . . . . . . . . . . . . . 260o C
In put Di ode
For ward DC Cur rent (65o C or be low) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA
(2)
Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Peak For ward Cur rent (1 µs pulse width, 300 pps). . . . . . . . . . . . . . . . . . . . . . 1.00 A
Out put Sen sor
Con tinu ous Col lec tor Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Collector- Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Collector- Base Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Emitter- Base Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
(3)
Notes:
(1) Measured with input diode leads shorted together and output leads shorted together.
(2) Derate linearly 0.67 mA/o C above 65o C.
(3) Derate linearly 3.0 mW/o C above 25o C.
Prod uct Bul le tin JANTX4N22AU
Sep tem ber 1996
Sur face Mount Op ti cally Cou pled Iso la tors
Types JANTX, JANTXV, 4N22AU, 4N23AU, 4N24AU
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
15-22
.058 (1.47)
Types JANTX, JANTXV, 4N22AU, 4N23AU, 4N24AU
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
Sym bol Pa rame ter Type Min Typ Max Units Test Con di tions
In put Di ode
V
F
Forward Voltage 0.80 1.30 V I
F
= 10.0 mA
1.00 1.50 V I
F
= 10.0 mA, TA = -55o C
0.70 1.20 V IF = 10.0 mA, TA = 100o C
I
R
Reverse Current
100
µA
VR = 2.0 V
Out put Pho to tran sis tor
V
(BR)CBO
Collector-Base Breakdown Voltage
35 V
IC = 100 µA, IE = 0, IF = 0
V
(BR)CEO
Collector-Emitter Breakdown Voltage 35 V IC = 1.0 mA, IB = 0, IF = 0
V
(BR)EBO
Emitter-Base Breakdown Voltage
4.0 V
IE = 100 µA, I
C =
0, IF = 0
I
C(OFF)
Collector-Emitter Dark Current
100
100
nAµAVCE = 20 V, IB = 0, IF = 0
VCE = 20 V, IB = 0, IF = 0, TA = 100o C
Cou pled
I
C(ON)
On-State Collector Current
4N22AU
0.15
2.50
1.00
1.00
mA
mA
mA
mA
VCE = 5.0 V, IB = 0, IF = 2.0 mA
VCE = 5.0 V, IB = 0, IF = 10.0 mA
VCE = 5.0 V, IB = 0, IF = 10.0 mA, TA = -55o C
VCE = 5.0 V, IB = 0, IF = 10.0 mA, TA = 100
o
C
4N23AU
0.20
6.00
2.50
2.50
mA
mA
mA
mA
VCE = 5.0 V, IB = 0, IF = 2.0 mA
VCE = 5.0 V, IB = 0, IF = 10.0 mA
VCE = 5.0 V, IB = 0, IF = 10.0 mA, TA = -55o C
VCE = 5.0 V, IB = 0, IF = 10.0 mA, TA = 100
o
C
4N24AU
0.40
10.00
4.00
4.00
mA
mA
mA
mA
VCE = 5.0 V, IB = 0, IF = 2.0 mA
VCE = 5.0 V, IB = 0, IF = 10.0 mA
VCE = 5.0 V, IB = 0, IF = 10.0 mA, TA = -55o C
VCE = 5.0 V, IB = 0, IF = 10.0 mA, TA = 100
o
C
V
CE(SAT)
Collector-Emitter Saturation
Voltage
4N22AU
4N23AU
4N24AU
0.30
0.30
0.30
V
IC = 2.5 mA, IB = 0, IF = 20.0 mA
IC = 5.0 mA, IB = 0, IF = 20.0 mA
IC = 10.0 mA, IB = 0, IF = 20.0 mA
h
FE
DC Current Gain 4N22AU
4N23AU
4N24AU
200
300
400
VCE = 5.0 V, IC = 10.0 mA, IF = 0 mA
R
IO
Resistance (Input to Output)
10
11
Ω VIO = ± 1000 Vdc
(1)
C
IO
Capacitance (Input to Output) 5.0 pF VIO = 0.0 V, f = 1.0 MHz
(1)
t
r
Output Rise Time 4N22AU
4N23AU
4N24AU
15.0
15.0
20.0
µs
µs
µs
VCC = 10.0 V, IF = 10.0 mA, RL = 100 Ω
t
f
Output Fall Time 4N22AU
4N23AU
4N24AU
15.0
15.0
20.0
µs
µs
µs
15-23
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