ON Semiconductor TO−220 User Manual

NTP52N10

Power MOSFET
60 Amps, 100 Volts

N−Channel Enhancement Mode TO−220

Features

• Source−to−Drain Diode Recovery Time comparable to a Discrete

Fast Recovery Diode

• Avalanche Energy Specified

• I

DSS

and R

Specified at Elevated Temperature

DS(on)

• Pb−Free Package is Available*

Applications

• PWM Motor Controls

• Power Supplies

• Converters

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Drain−to−Source Voltage (RGS = 1.0 MW)

Gate−to−Source Voltage

− Continuous

− Non−Repetitive (tpv10 ms)

Drain

− Continuous @ T

− Continuous @ T

− Pulsed (Note 1.)

Total Power Dissipation @ TA 25°C
Derate above 25°C

Operating and Storage Temperature Range TJ, T

Single Drain−to−Source Avalanche Energy

− Starting T
(VDD = 50 V, VGS = 10 Vdc,

(pk) = 40 A, L = 1.0 mH, RG = 25 W)

I

L

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

= 25°C

J

= 25°C unless otherwise noted)

C

Rating

25°C

A

100°C

A

Symbol Value Unit

stg

100 Vdc

100 Vdc

"20
"40

60
40

156

214

1.43

−55 to
+175

800 mJ

62.5

260 °C

Watts

0.7

Vdc

Adc

W/°C

°C

°C/W

V

V

R
R

DSS

DGR

V

GSM

I
I

I

DM

P

E

T

q
q

GS

D
D

D

AS

JC
JA

L

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60 AMPERES

100 VOLTS

30 mW @ V

N−Channel

G

4

1

2

3

TO−220

CASE 221A

STYLE 5

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

NTP52N10 TO−220 50 Units / Rail

NTP52N10G TO−220

(Pb−Free)

= 10 V

GS

D

S

MARKING DIAGRAM &

PIN ASSIGNMENT

D

NTP52N10G

AYWW

1

D

S

G

50 Units / Rail

© Semiconductor Components Industries, LLC, 2006

March, 2006 − Rev. 4

1 Publication Order Number:

NTP52N10/D

NTP52N10

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 Vdc, ID = 250 mAdc)

(V

GS

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(V

= 0 Vdc, VDS = 100 Vdc, TJ =25°C)

GS

= 0 Vdc, VDS = 100 Vdc, TJ =125°C)

(V

GS

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS

Gate Threshold Voltage

= VGS, ID = 250 mAdc)

(V

DS

Temperature Coefficient (Negative)

Static Drain−to−Source On−State Resistance

(V

= 10 Vdc, ID = 26 Adc)

GS

= 10 Vdc, ID = 26 Adc, TJ = 125°C)

(V

GS

Drain−to−Source On−Voltage

(V

= 10 Vdc, ID = 52 Adc)

GS

Forward Transconductance (VDS = 26 Vdc, ID = 10 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Transfer Capacitance C

SWITCHING CHARACTERISTICS (Notes 2. & 3.)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

(V

= 80 Vdc, ID = 52 Adc,

DD

= 10 Vdc, RG = 9.1 W)

V

GS

Fall Time t

Gate Charge

(VDS = 80 Vdc, ID = 52 Adc,

V

= 10 Vdc)

GS

BODY−DRAIN DIODE RATINGS (Note 2.)

Diode Forward On−Voltage (IS = 52 Adc, VGS = 0 Vdc)

(IS = 52 Adc, VGS = 0 Vdc, TJ = 125°C)

Reverse Recovery Time

(IS = 52 Adc, VGS = 0 Vdc,

/dt = 100 A/ms)

di

S

Reverse Recovery Stored Charge Q

2. Indicates Pulse Test: P.W. = 300 ms Max, Duty Cycle = 2%.

3. Switching characteristics are independent of operating junction temperature.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

C

t

d(on)

d(off)

Q

Q

Q

V

t

t

t

FS

iss

oss

rss

r

f

tot

gs

gd

SD

rr

a

b

RR

100

−

−

−

−

160

−

−

−

−

5.0
50

− − ±100 nAdc

2.0

−

−

−

2.92

−8.75

0.023

0.050

4.0

−

0.030

0.060

− 1.25 1.45

− 31 − Mhos

− 2250 3150 pF

− 620 860

− 135 265

− 15 25 ns

− 95 180

− 74 150

− 100 190

− 72 135 nC

− 13 −

− 37 −

−

−

1.06

0.95

1.5

−

− 148 −

− 106 −

− 42 −

− 0.66 −

Vdc

mV/°C

mAdc

Vdc

mV/°C

Vdc

Vdc

ns

mC

W

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2

NTP52N10

100

8 V

80

7 V

60

40

20

, DRAIN CURRENT (AMPS)

D

I

0

0

231

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS

VGS = 10 V

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.05

VGS = 10 V

0.04

0.03

0.02

9 V

4 V

4675

TJ = 100°C

TJ = 25°C

4.5 V

TJ = 25°C

6 V

5.5 V

5 V

89

100

80

60

40

20

, DRAIN CURRENT (AMPS)

D

I

0

10

23 6

0.05
TJ = 25°C

0.04

0.03

0.02

VDS ≥ 10 V

TJ = 25°C

TJ = 100°C

45

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

VGS = 10 V

TJ = −55°C

VGS = 15 V

87

0.01

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

R

0

10

30

20 40 50 100

TJ = −55°C

60 70 90

ID, DRAIN CURRENT (AMPS)

80

Figure 3. On−Resistance versus

Drain Current and Temperature

ID = 26 A

2.5
V

= 10 V

GS

2

1.5

1

(NORMALIZED)

0.5

, DRAIN−TO−SOURCE RESISTANCE

0

DS(on)

−50 100500−25 175

R

25

TJ, JUNCTION TEMPERATURE (°C)

125

0.01

, DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on)

R

0

20 40 60 10080

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

10000

, LEAKAGE (nA)

I

VGS = 0 V

TJ = 150°C

1000

100

DSS

10

30 70605040 100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 100°C

80

9075 150

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−To−Source Leakage

Current versus Voltage

3