ON Semiconductor TIP140, TIP141, TIP142, TIP145, TIP146 Service Manual
...
TIP140, TIP141, TIP142,
(NPN); TIP145, TIP146,
TIP147, (PNP)
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low frequency
switching applications.
Features
• High DC Current Gain −
Min hFE= 1000 @ IC
= 5.0 A, VCE = 4 V
• Collector−Emitter Sustaining Voltage − @ 30 mA
V
CEO(sus)
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Pb−Free Packages are Available*
= 60 Vdc (Min) − TIP140, TIP145
= 80 Vdc (Min) − TIP141, TIP146
= 100 Vdc (Min) − TIP142, TIP147
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10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
MAXIMUM RATINGS
Rating Symbol
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current
− Continuous
− Peak (Note 1)
Base Current − Continuous I
Total Power Dissipation
@ TC = 25_C
Operating and St orage
Junction Temperature Range
TJ, T
CEO
CB
EB
I
C
B
P
TIP140
TIP145
D
stg
TIP141
TIP146
60 80 100 Vdc
60 80 100 Vdc
−65 to +150
TIP142
TIP147
5.0 Vdc
10
15
0.5 Adc
125 W
Unit
Adc
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. 5 ms, v 10% Duty Cycle.
R
q
JC
R
q
JA
1.0 °C/W
35.7 °C/W
SOT−93 (TO−218)
CASE 340D
STYLE 1
MARKING DIAGRAM
AYWWG
TIP14x
A = Assembly Location
Y = Year
WW = Work Week
TIP14x = Device Code
x = 0, 1, 2, 5, 6, or 7
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 5
1 Publication Order Number:
Preferred devices are recommended choices for future use
and best overall value.
TIP140/D
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
DARLINGTON SCHEMATICS
NPN
TIP140
TIP141
TIP142
BASE
COLLECTOR
≈ 8.0 k ≈ 40
EMITTER
PNP
TIP145
TIP146
TIP147
BASE
COLLECTOR
≈ 8.0 k ≈ 40
EMITTER
ORDERING INFORMATION
Device Package Shipping
TIP140 SOT−93 (TO−218) 30 Units / Rail
TIP140G SOT−93 (TO−218)
(Pb−Free)
TIP141 SOT−93 (TO−218) 30 Units / Rail
TIP141G SOT−93 (TO−218)
(Pb−Free)
TIP142 SOT−93 (TO−218) 30 Units / Rail
TIP142G SOT−93 (TO−218)
(Pb−Free)
TIP145 SOT−93 (TO−218) 30 Units / Rail
TIP145G SOT−93 (TO−218)
(Pb−Free)
TIP146 SOT−93 (TO−218) 30 Units / Rail
TIP146G SOT−93 (TO−218)
(Pb−Free)
TIP147 SOT−93 (TO−218) 30 Units / Rail
TIP147G SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
http://onsemi.com
2
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
= 30 mA, IB = 0) TIP140, TIP145
(I
C
ООООООООООООООООО
ООООООООООООООООО
TIP141, TIP146
TIP142, TIP147
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP140, TIP145
ООООООООООООООООО
(VCE = 40 Vdc, IB = 0) TIP141, TIP146
ООООООООООООООООО
(VCE = 50 Vdc, IB = 0) TIP142, TIP147
Collector Cutoff Current
ООООООООООООООООО
(VCB = 60 V, IE = 0) TIP140, TIP145
(VCB = 80 V, IE = 0) TIP141, TIP146
ООООООООООООООООО
(VCB = 100 V, IE = 0) TIP142, TIP147
Emitter Cutoff Current (VBE = 5.0 V)
ON CHARACTERISTICS (Note 2)
DC Current Gain
ООООООООООООООООО
(IC = 5.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
ООООООООООООООООО
Collector−Emitter Saturation Voltage
(IC = 5.0 A, IB = 10 mA)
ООООООООООООООООО
(IC = 10 A, IB = 40 mA)
Base−Emitter Saturation Voltage
(IC = 10 A, IB = 40 mA)
ООООООООООООООООО
Base−Emitter On Voltage
(IC = 10 A, VCE = 4.0 Vdc)
ООООООООООООООООО
SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time
Rise Time
Storage Time
ОООООООООООО
(VCC = 30 V, IC = 5.0 A,
ОООООООООООО
IB = 20 mA, Duty Cycle v 2.0%,
IB1 = IB2, RC & RB Varied, TJ = 25_C)
ОООООООООООО
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Symbol
V
CEO(sus)
ÎÎÎ
ÎÎÎ
I
CEO
ÎÎÎ
ÎÎÎ
I
CBO
ÎÎÎ
ÎÎÎ
I
EBO
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
V
BE(sat)
ÎÎÎ
V
BE(on)
ÎÎÎ
t
d
t
r
t
s
t
f
Min
60
ÎÎ
80
ÎÎ
100
ÎÎ
−
−
ÎÎ
−
ÎÎ
−
−
ÎÎ
−
−
ÎÎ
1000
500
ÎÎ
−
ÎÎ
−
−
ÎÎ
−
ÎÎ
−
−
−
−
Typ
−
Î
−
Î
−
Î
−
−
Î
−
Î
−
−
Î
−
−
Î
−
−
Î
−
Î
−
−
Î
−
Î
0.15
0.55
2.5
2.5
Max
−
ÎÎ
−
ÎÎ
−
ÎÎ
2.0
2.0
ÎÎ
2.0
ÎÎ
1.0
1.0
ÎÎ
1.0
2 0
ÎÎ
−
−
ÎÎ
2.0
ÎÎ
3.0
3.5
ÎÎ
3.0
ÎÎ
−
−
−
−
Unit
Vdc
Î
Î
mA
Î
Î
mA
Î
Î
mA
−
Î
Î
Vdc
Î
Vdc
Î
Vdc
Î
ms
ms
ms
ms
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V
2
approx
+12 V
0
V
1
appox.
−8.0 V
, tf ≤ 10 ns
t
r
DUTY CYCLE = 1.0%
25 ms
R
B
D
1
51
+4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
Figure 1. Switching Times Test Circuit
≈ 8.0 k
V
CC
−30 V
R
C
TUT
SCOPE
≈ 40
http://onsemi.com
10
PNP
5.0
2.0
t
s
t
f
NPN
1.0
t, TIME (s)μ
0.5
td @ V
0.2
0.1
0.2
0.5 1.0 3.0 5.0 10 20
BE(off)
t
r
= 0
VCC = 30 V
IC/IB = 250
IB1 = I
B2
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times
3
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