ON Semiconductor TIP120, TIP121, TIP122 (NPN), TIP125, TIP126 Specifications

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

Preferred Devices

Plastic Medium−Power Complementary Silicon Transistors

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Designed for general−purpose amplifier and low−speed switching

applications.

Features

• High DC Current Gain −

h

FE

= 2500 (Typ) @ IC = 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 100 mAdc

V

CEO(sus)

= 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127

• Low Collector−Emitter Saturation Voltage −

V

= 2.0 Vdc (Max) @ IC = 3.0 Adc

CE(sat)

= 4.0 Vdc (Max) @ IC = 5.0 Adc

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 65 WATTS

MARKING DIAGRAM

4

TO−220AB

CASE 221A

1

2

3

TIP12x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

STYLE 1

TIP12xG

AYWW

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

September, 2005 − Rev. 6

1 Publication Order Number:

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

TIP120/D

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

Î

MAXIMUM RATINGS

TIP120,

Rating

Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous

ОООООООООООООООО

− Peak Base Current Total Power Dissipation @ TC = 25_C

Derate above 25_C

ОООООООООООООООО

Total Power Dissipation @ TA = 25_C

Symbol

V

CEO

V

CB

V

EB

I

C

ÎÎÎ

I

B

P

ÎÎÎ

D

P

D

TIP125

60 60

ООООООО

Derate above 25_C Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction, Temperature Range

TJ, T

E

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

Symbol

R

q

JC

R

q

JA

TIP121,

TIP126

80 80

5.0

8.0

120

65

0.52

2.0

0.016 50

–65 to +150

Max

1.92

62.5

TIP122,

TIP127

100 100

Unit

Vdc Vdc Vdc Adc

ÎÎ

mAdc

W

W/_C

ÎÎ

W

W/_C

mJ _C

Unit

_C/W _C/W

ORDERING INFORMATION

Device Package Shipping

TIP120 TO−220 50 Units / Rail TIP120G TO−220

(Pb−Free) TIP121 TO−220 50 Units / Rail TIP121G TO−220

(Pb−Free) TIP122 TO−220 50 Units / Rail TIP122G TO−220

(Pb−Free) TIP125 TO−220 50 Units / Rail TIP125G TO−220

(Pb−Free) TIP126 TO−220 50 Units / Rail TIP126G TO−220

(Pb−Free) TIP127 TO−220 50 Units / Rail TIP127G TO−220

(Pb−Free)

50 Units / Rail

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2

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

Î

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

= 100 mAdc, IB = 0) TIP120, TIP125

(I

C

ООООООООООООООООООО

TIP121, TIP126 TIP122, TIP127

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP120, TIP125

ООООООООООООООООООО

(VCE = 40 Vdc, IB = 0) TIP121, TIP126

ООООООООООООООООООО

(VCE = 50 Vdc, IB = 0) TIP122, TIP127

Collector Cutoff Current

ООООООООООООООООООО

(VCB = 60 Vdc, IE = 0) TIP120, TIP125 (VCB = 80 Vdc, IE = 0) TIP121, TIP126

ООООООООООООООООООО

(VCB = 100 Vdc, IE = 0) TIP122, TIP127

Emitter Cutoff Current

ООООООООООООООООООО

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.5 Adc, VCE = 3.0 Vdc)

ООООООООООООООООООО

(IC = 3.0 Adc, VCE = 3.0 Vdc)

Collector−Emitter Saturation Voltage

ООООООООООООООООООО

(IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc)

ООООООООООООООООООО

Base−Emitter On Voltage

(IC = 3.0 Adc, VCE = 3.0 Vdc)

ООООООООООООООООООО

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

ООООООООООООООООООО

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127

ООООООООООООООООООО

TIP120, TIP121, TIP122

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CBO

ÎÎÎ

I

EBO

ÎÎÎ

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

h

fe

ÎÎÎ

C

ob

ÎÎÎ

Min

60

ÎÎ

80

ÎÎ

100

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

1000

ÎÎ

1000

ÎÎ

−

ÎÎ

−

ÎÎ

4.0

ÎÎ

−

ÎÎ

Max

−

Î

−

Î

−

Î

0.5

Î

0.5

Î

0.2

Î

0.2

2.0

Î

−

Î

−

Î

2.0

4.0

Î

2.5

Î

−

Î

300 200

Î

Unit

Vdc

ÎÎ

mAdc

ÎÎ

mAdc

ÎÎ

mAdc

ÎÎ

−

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

−

ÎÎ

pF

ÎÎ

4.0

3.0

2.0

1.0

, POWER DISSIPATION (WATTS)

D

P

T

C

A

80

60

T

C

40

T

20

0

0 20 40 60 80 100 120 160

A

T, TEMPERATURE (°C)

Figure 1. Power Derating

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3

140

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D

MUST BE FAST RECOVERY TYPE, eg:

1

1N5825 USED ABOVE I

≈ 100 mA

B

MSD6100 USED BELOW IB ≈ 100 mA

V

2

approx

+8.0 V

0

V

1

approx

−12 V

, tf ≤ 10 ns

t

r

DUTY CYCLE = 1.0%

25 ms

R

B

D

1

51

for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities.

≈ 8.0 k

+4.0 V

Figure 2. Switching Times Test Circuit

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.1

0.05

0.07

(NORMALIZED)

0.05

0.02

0.03

0.02

0.01

0.01 SINGLE PULSE

0.02

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

r(t), TRANSIENT THERMAL RESISTANCE

TUT

≈ 120

R

V

−30 V

C

5.0

CC

3.0

t

s

PNP NPN

2.0

SCOPE

1.0

t

f

0.7

0.5

t, TIME (s)μ

0.3

0.2 VCC = 30 V

t

r

IC/IB = 250 IB1 = I

0.1

0.07

0.05

0.1

B2

TJ = 25°C

td @ V

BE(off)

= 0

0.2 0.3 0.5 0.7 1.0 2.0 3.0 10

5.0 7.0

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

P

Z

= r(t) R

q

JC(t)

R

= 1.92°C/W MAX

q

JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

− TC = P

J(pk)

t, TIME (ms)

q

JC

1

Z

q

JC(t)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

Figure 4. Thermal Response

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4

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

20

10

5.0

2.0

1.0

0.5

0.2

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.05

0.02

1.0

TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V

CEO

2.0 5.0 20 50 100

3.0 7.0 30 70

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

500 ms

dc

1ms

TIP120, TIP125 TIP121, TIP126 TIP122, TIP127

10

Figure 5. Active−Region Safe Operating Area

10,000

5000 3000

2000

1000

, SMALL−SIGNAL CURRENT GAIN

fe

h

500 300

200

100

50 30

20

10

1.0

TC = 25°C VCE = 4.0 Vdc IC = 3.0 Adc

PNP NPN

20 50 100 200 10002.0 5.0 10

f, FREQUENCY (kHz)

5ms

100 ms

500

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − V limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T < 150_C. T

may be calculated from the data in

J(pk)

Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown

300

TJ = 25°C

200

C

ob

C, CAPACITANCE (pF)

100

70

50

30

0.1

PNP NPN

VR, REVERSE VOLTAGE (VOLTS)

C

ib

2.0 5.0 10 20 100500.2 0.5 1.0

CE

Figure 6. Small−Signal Current Gain

Figure 7. Capacitance

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5

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

NPN

PNP

TIP120, TIP121, TIP122

20,000

10,000

5000

TJ = 150°C

3000 2000

1000

, DC CURRENT GAIN

FE

h

500

300 200

0.1

0.2 0.3 0.5 1.0 2.0 10

3.0

2.6

IC = 2.0 A

25°C

−55 °C

0.7 3.0

IC, COLLECTOR CURRENT (AMP)

4.0 A

6.0 A

20,000

VCE = 4.0 V

10,000

, DC CURRENT GAIN

h

5.0 7.0

Figure 8. DC Current Gain

TJ = 25°C

TIP125, TIP126, TIP127

7000 5000

TJ = 150°C

FE

3000

2000

1000

700

500

300

200

3.0

2.6

0.1

25°C

−55 °C

0.2 0.3 0.5 1.0 2.0 10

IC = 2.0 A

VCE = 4.0 V

0.7 3.0

IC, COLLECTOR CURRENT (AMP)

4.0 A 6.0 A

5.0 7.0

TJ = 25°C

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

V, VOLTAGE (VOLTS)

2.2

1.8

1.4

1.0

3.0

2.5

2.0

1.5

1.0

0.5

0.3

0.5 1.0 2.0 10 30

0.7 5.0

IB, BASE CURRENT (mA)

3.0 7.0

Figure 9. Collector Saturation Region

TJ = 25°C

V

@ IC/IB = 250

BE(sat)

VBE @ VCE = 4.0 V

V

@ IC/IB = 250

CE(sat)

0.1

0.2 0.3 0.5 1.0 2.0 5.0 10

IC, COLLECTOR CURRENT (AMP)

0.7 7.0

3.0

2.2

1.8

1.4

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

20

1.0

0.3

3.0

TJ = 25°C

2.5

2.0

1.5

VBE @ VCE = 4.0 V

V, VOLTAGE (VOLTS)

V

1.0

0.5

0.1 0.2 0.3 0.5 1.0 2.0 5.0 10

Figure 10. “On” Voltages

0.5 1.0 2.0 10 30

0.7 5.0 20

IB, BASE CURRENT (mA)

@ IC/IB = 250

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMP)

3.0 7.0

@ IC/IB = 250

3.00.7 7.0

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6

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AA

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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TIP120/D

7

ON Semiconductor TIP120, TIP121, TIP122 (NPN), TIP125, TIP126 Specifications

Specifications and Main Features

Frequently Asked Questions

User Manual