ON Semiconductor TIP110, TIP111, TIP112, TIP115, TIP116 Service Manual
...
TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)
TIP111, TIP112, TIP116, and TIP117 are Preferred Devices
Plastic Medium-Power
Complementary Silicon
Transistors
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Designed for general-purpose amplifier and low-speed switching
applications.
Features
•High DC Current Gain -
hFE= 2500 (Typ) @ IC
= 1.0 Adc
•Collector-Emitter Sustaining Voltage - @ 30 mAdc
V
CEO(sus)
= 60 Vdc (Min) - TIP110, TIP115
= 80 Vdc (Min) - TIP111, TIP116
= 100 Vdc (Min) - TIP112, TIP117
•Low Collector-Emitter Saturation Voltage -
V
= 2.5 Vdc (Max) @ IC
CE(sat)
= 2.0 Adc
•Monolithic Construction with Built-in Base-Emitter Shunt Resistors
•Pb-Free Packages are Available*
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80-100 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
TO-220AB
CASE 221A
1
2
3
TIP11x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
STYLE 1
TIP11xG
AYWW
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 6
1 Publication Order Number:
See detailed ordering and shipping information in the package
ORDERING INFORMATION
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
TIP110/D
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
MAXIMUM RATINGS
TIP110,
TIP115
60
60
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
- Peak
Base Current
Total Power Dissipation @ TC = 25°C
I
B
P
D
Derate above 25°C
Total Power Dissipation @ TA = 25°C
P
D
Derate above 25°C
Unclamped Inductive Load Energy - Figure 13
Operating and Storage Junction
TJ, T
E
stg
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Symbol
R
q
JC
R
q
JA
TIP111,
TIP116
80
80
5.0
2.0
4.0
50
50
0.4
2.0
0.016
25
–65 to +150
Max
2.5
62.5
TIP112,
TIP117
100
100
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
W/°C
W
W/°C
mJ
°C
Unit
°C/W
°C/W
ORDERING INFORMATION
Device Package Shipping
TIP110 TO-220 50 Units / Rail
TIP110G TO-220
(Pb-Free)
TIP111 TO-220 50 Units / Rail
TIP111G TO-220
(Pb-Free)
TIP112 TO-220 50 Units / Rail
TIP112G TO-220
(Pb-Free)
TIP115 TO-220 50 Units / Rail
TIP115G TO-220
(Pb-Free)
TIP116 TO-220 50 Units / Rail
TIP116G TO-220
(Pb-Free)
TIP117 TO-220 50 Units / Rail
TIP117G TO-220
(Pb-Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
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2
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)
= 30 mAdc, IB = 0) TIP110, TIP115
(I
C
TIP111, TIP116
TIP112, TIP117
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP110, TIP115
(VCE = 40 Vdc, IB = 0) TIP111, TIP116
(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) TIP110, TIP115
(VCB = 80 Vdc, IE = 0) TIP111, TIP116
(VCB = 100 Vdc, IE = 0) TIP112, TIP117
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
Base-Emitter On Voltage
(IC = 2.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Symbol
V
CEO(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
h
fe
C
ob
Min
60
80
100
-
-
-
-
-
-
-
1000
500
-
-
25
-
-
Max
-
-
-
2.0
2.0
2.0
1.0
1.0
1.0
2.0
-
-
2.5
2.8
-
200
100
Unit
Vdc
mAdc
mAdc
mAdc
-
Vdc
Vdc
-
pF
3.0
2.0
1.0
, POWER DISSIPATION (WATTS)
D
P
T
T
C
A
60
40
T
C
20
T
A
0
0
0 20 40 60 80 100 120 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
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3
140
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