ON Semiconductor SZNUP2124 User Manual

Dual Line CAN/CAN-FD
Bus Protector

SZNUP2124

The SZNUP2124 has been designed to protect both CAN and
CAN−FD transceivers from ESD and other harmful transient voltage
events. This device provides two channels of bidirectional protection
in a single, ultra−compact XDFNW3 1x1 mm package. The
combination of low turn−on voltage and low dynamic resistance
(R

) gives the system designer a low cost option for improving

dyn

system reliability by working in conjunction with transceivers
utilizing advanced internal ESD structures.

Features

• Low Reverse Leakage Current (< 100 nA)

• Low Parasitic Capacitance (< 6 pF) for High Signal Integrity of

CAN−FD Data Rates

• 175°C T

Applications

• IEC Compatibility:

IEC 61000−4−2 (ESD): Level 4
IEC 61000−4−4 (EFT): 50 A (5/50 ns)
IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)

• ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 ms)

• ISO 7637−3, Repetitive Electrical Fast Transient (EFT)

EMI Surge Pulses, 50 A (5/50 ns)

• Flammability Rating UL 94 V−0

• Wettable Flank Package for optimal Automated Optical Inspection

(AOI)

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Automotive Networks

♦ CAN / CAN−FD
♦ Low and High−Speed CAN
♦ Fault Tolerant CAN
♦ LIN

− Rated for High Temperature, Mission Critical

J(max)

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XDFNW3

DUAL BIDIRECTIONAL

VOLTAGE SUPPRESSOR

12

XDFNW3

CASE 521AC

PIN 1

PIN 2

CAN_H

CAN

Transceiver

CAN_L

MARKING DIAGRAM

24M

24 = Specific Device Code
M = Month Code

3

PIN 3

CAN Bus

SZNUP2124

© Semiconductor Components Industries, LLC, 2019

February, 2021 − Rev. 2

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

1 Publication Order Number:

SZNUP2124/D

SZNUP2124

MAXIMUM RATINGS (T

Symbol

PPK Peak Power Dissipation

T

J

T

J

T

L

ESD Human Body Model (HBM)

8/20 ms Double Exponential Waveform (Note 1)

Operating Junction Temperature Range −55 to 175 °C

Storage Temperature Range −55 to 175 °C

Lead Solder Temperature (10 s) 260 °C

IEC 61000−4−2 Specification (Contact)

= 25°C, unless otherwise specified)

J

Rating Value Unit

120

16
28

W

kV
kV

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

1. Non−repetitive current pulse per Figure 1.

ELECTRICAL CHARACTERISTICS (T

= 25°C, unless otherwise specified)

J

Symbol Parameter Test Conditions Min Typ Max Unit

V

RWM

V

V

I

CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND)

DC

Reverse Working Voltage (Note 2) 24 V

Breakdown Voltage IT = 1 mA (Note 3) 26 27 33 V

BR

I

Reverse Leakage Current V

R

Clamping Voltage

C

Maximum Peak Pulse Current

PP

= 24 V 100 nA

RWM

IPP = 1 A (8/20 ms Waveform),
(Note 4)

8/20 ms Waveform (Note 4)

V

= 5 V, f = 1 MHz (Line to GND)

R

Diode Capacitance Matching VR = 0 V, f = 1 MHz (Note 5) 0.25 pF

40 V

3.0 A

10

6.0

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Surge protection devices are normally selected according to the working peak reverse voltage (V

than the DC or continuous peak operating voltage level.

is measured at pulse test current IT.

3. V

BR

4. Pulse waveform per Figure 1.

5. DC is the percentage difference between C

table.

of lines 1 and 2 measured according to the test condition given in the electrical characteristics

J

), which should be equal or greater

RWM

ORDERING INFORMATION

Device Part Orientation

SZNUP2124MXWTAG* Pin 1 − Upper Left

SZNUP2124MXWTBG* Pin 1 − Upper Right

†

Package Shipping

XDFNW3

(Pb−Free)

3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable

†

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2

SZNUP2124

TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

1E−02

1E−03

1E−04

1E−05

1E−06

1E−07

I (A)

1E−08

1E−09

1E−10

1E−11

1E−12

1E−13

−40 −30 −20 −10 0 10 20

V (V)

30 40

Figure 1. IV Characteristics

30

25

55°C

20

25°C

15

10

5

, REVERSE BIAS VOLTAGE (V)

R

V

0

1E−12 1E−10 1E−09 1E−071E−11 1E −08 1E−06

−55°C

IL, LEAKAGE CURRENT (A)

85°C

150°C

Figure 3. IR vs. Temperature Characteristics

10

8

6

C (pF)

4

2

0

−30 −25 −20 −15 −10 −5

0 5 10 15 20 25 30

V

(V)

BIAS

Figure 2. CV Characteristics

100

80

60

40

20

POWER DISSIPATION (%)

0

0 50 75 125 150

25 100

TEMPERATURE (°C)

Figure 4. Steady State Power Derating

110

100

90

80

70

60

50

40

30

20

% OF PEAK PULSE CURRENT

10

0

0 5 15 25

c−t

td = IPP/2

10 20

t, TIME (ms)

Figure 5. Pulse Waveform (8/20 ms)

WAVEFORM
PARAMETERS

= 8 ms

t

r

t

= 20 ms

d

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30

60

50

40

(V)

30

CLAMP

V

20

10

0

01234

I

PP

IO−GND

(A)

Figure 6. Clamping Voltage vs. Peak Pulse Current

(8/20 ms)

3

SZNUP2124

TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

100

80

60

40

VOLTAGE (V)

20

0

−20
140

120100806040200−20

TIME (ns) TIME (ns)

180160 200 180160 200

Figure 7. IEC61000−4−2 +8 kV Contact ESD

Clamping Voltage

20

0

−20

−40

VOLTAGE (V)

−60

−80

−100

140

120100806040200−20

Figure 8. IEC61000−4−2 −8 kV Contact ESD

Clamping Voltage

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