ON Semiconductor ESD7371, SZESD7371 User Manual

ESD7371,
SZESD7371 Series

ESD Protection Diode

Ultra−Low Capacitance

The ESD7371 Series is designed to protect voltage sensitive
components that require ultra−low capacitance from ESD and
transient voltage events. Excellent clamping capability, low
capacitance, high breakdown voltage, high linearity, low leakage, and
fast response time make these parts ideal for ESD protection on
designs where board space is at a premium. It has industry leading
capacitance linearity over voltage making it ideal for RF applications.
This capacitance linearity combined with the extremely small package
and low insertion loss makes this part well suited for use in antenna
line applications for wireless handsets and terminals.

Features

• Industry Leading Capacitance Linearity Over Voltage

• Low Capacitance (0.7 pF Max, I/O to GND)

• Stand−off Voltage: 5.3 V

• Low Leakage: < 1 nA

• Low Dynamic Resistance < 1 W

• IEC61000−4−2 Level 4 ESD Protection

• 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• RF Signal ESD Protection

• RF Switching, PA, and Antenna ESD Protection

• Near Field Communications

• USB 2.0, USB 3.0

MAXIMUM RATINGS (T

IEC 61000−4−2 (ESD) (Note 1) 20 kV
IEC 61000−4−5 (ESD) (Note 2) 3.0 A
Total Power Dissipation (Note 3) @ TA = 25°C

Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range TJ, T

Lead Solder Temperature − Maximum
(10 Second Duration)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Non−repetitive current pulse at T

2. Non−repetitive current pulse at T

3. Mounted with recommended minimum pad size, DC board FR−4

= 25°C unless otherwise noted)

A

Rating

= 25°C, per IEC61000−4−2 waveform.

A

= 25°C, per IEC61000−4−5 waveform.

A

Symbol Value Unit

°P

°

stg

300
400mW°C/W

−55 to
+150

260 °C

°C

D

R

q

JA

T

L

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MARKING

DIAGRAMS

2

1

1

Cathode

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

SOD−323

CASE 477

2

SOD−523

CASE 502

SOD−923

CASE 514AB

X, XX = Specific Device Code
M = Date Code

PIN CONFIGURATION

AND SCHEMATIC

1

ORDERING INFORMATION

12

Anode

AG

AE M

2

AG

M

M

© Semiconductor Components Industries, LLC, 2014

August, 2018 − Rev. 3

1 Publication Order Number:

ESD7371/D

ESD7371, SZESD7371 Series

See Application Note AND8308/D for further description of survivability specs.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

V

I

PP

V

RWM

I

V

I

Maximum Reverse Peak Pulse Current
Clamping Voltage @ I

C

Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V

R

Breakdown Voltage @ I

BR

Test Current

T

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Parameter

PP

T

RWM

VCV

BR

V

RWM

Uni−Directional

I

I

F

I

V

R

F

I

T

I

PP

V

RWM

BR
R

C
C
J

DYN

= 25°C unless otherwise specified)

A

5.3 V
IT = 1 mA 7.0 V
V

= 5.3 V < 1.0 50 nA

RWM

IPP = 1 A 11 15 V
IPP = 3 A 14 20 V
VR = 0 V, f = 1 MHz

V

= 0 V, f < 1 GHz

R

0.43

0.39

0.7

0.7
TLP Pulse 0.45

pF

W

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Working Voltage V
Breakdown Voltage (Note 4) V
Reverse Leakage Current I
Clamping Voltage (Note 5) V
Clamping Voltage (Note 5) V
Junction Capacitance C

Dynamic Resistance R

Symbol Conditions Min Typ Max Unit

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.

5. Non−repetitive current pulse at T

= 25°C, per IEC61000−4−5 waveform.

A

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2

ESD7371, SZESD7371 Series

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

I (A)

1.E−08

1.E−09

1.E−10

1.E−11

1.E−12
0123456789101112

V (V)

Figure 1. IV Characteristics Figure 2. CV Characteristics

2
0

−2

−4

−6

dB

−8

−10

−12

−14
1E8 1E9 1E10

FREQUENCY (Hz)

Figure 3. RF Insertion Loss Figure 4. Capacitance over Frequency

2E10

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

CAPACITANCE (pF)

0.2

0.1
0

0123456

V

(V)

bias

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

CAPACITANCE (pF)

0.4

0.2

0.0

0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5

FREQUENCY

16
14

12
10

8
6

TLP CURRENT (A)

4
2
0

0 2 4 6 8 101214161820

VOLTAGE (V)

Figure 5. Positive TLP I−V Curve

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8

6

4

2

0

(kV)

(kV)

(kV)

IEC

IEC

IEC

EQUIVALENT V

EQUIVALENT V

EQUIVALENT V

3

−14

−12

−10

−8

−6

TLP CURRENT (A)

−4

−2
0

02468101214161820

VOLTAGE (V)

Figure 6. Negative TLP I−V Curve

8−16

6

(kV)

4

2

EQUIVALENT V

0

IEC