ON Semiconductor RB751V40T1 Technical data
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RB751V40T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage – 0.28 Volts (Typ) @ I
• Low Reverse Current
= 1 mAdc
F
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40 V SCHOTTKY
BARRIER DIODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Reverse Voltage V
Reverse Voltage V
Electrostatic Discharge E
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board,
(Note 1.) T
Derate above 25°C
Thermal Resistance Junction to Ambient R
Junction and Storage
Temperature Range
1. FR–5 Minimum Pad
= 25°C
A
P
TJ, T
RM
SD
R
D
JA
stg
40 V
30 Vdc
HBM Class: 1C
MM Class: A
200
1.57mWmW/°C
635 °C/W
–55 to
+150
°C
1
CATHODE
1
SOD–323
CASE 477
PLASTIC
2
ANODE
2
MARKING DIAGRAMS
5E M
5E = Specific Device Code
M = Date Code
ORDERING INFORMATION
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 1
Device Package Shipping
RB751V40T1 SOD–323 3000/Tape & Reel
1 Publication Order Number:
RB751V40T1/D
RB751V40T1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
= 10 µA)
R
Total Capacitance
(V
= 1.0 V, f = 1.0 MHz)
R
Reverse Leakage
(V
= 30 V)
R
Forward Voltage
= 1.0 mAdc)
(I
F
820 Ω
+10 V
50 Ω OUTPUT
PULSE
GENERATOR
0.1 µF
2 k
100 µH
I
F
DUT
= 25°C unless otherwise noted)
A
0.1 µF
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
V
R
V
(BR)R
C
T
I
R
V
F
t
t
r
p
10%
90%
INPUT SIGNAL
30 – – Volts
– 2.0 2.5 pF
– 300 500 nAdc
– 0.28 0.37 Vdc
I
F
t
t
rr
I
R
i
R(REC)
t
= 1 mA
OUTPUT PULSE
(I
= IR = 10 mA; measured
F
at i
R(REC)
= 1 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
is equal to 10 mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
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2
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