ON Semiconductor RB521S30 User Manual
RB521S30
Sch
ottky Barrier Diode, 30 V
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage 0.5 V (max) @ I
= 200 mA
F
• Low Reverse Current
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current DC I
Peak Forward Surge Current (Note 1) I
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. 60 Hz for 1 cycle.
R
F
FSM
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 2)
T
= 25°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Range
2. FR−5 Minimum Pad.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
P
R
TJ, T
D
q
JA
stg
30 Vdc
200 mA
1.0 A
200
1.57
635
−55 to +125 °C
mW
mW/°C
°C/W
www.onsemi.com
30 V SCHOTTKY
BARRIER DIODE
SOD−523
CASE 502
1
CATHODE
MARKING DIAGRAM
5M MG
12
5M = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device Package Shipping
RB521S30T1G SOD−523
(Pb−Free)
NSVRB521S30T1G SOD−523
(Pb−Free)
RB521S30T5G SOD−523
(Pb−Free)
NSVRB521S30T5G SOD−523
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2
ANODE
G
†
3000/Tape & Reel
3000/Tape & Reel
8000/Tape & Reel
8000/Tape & Reel
© Semiconductor Components Industries, LLC, 2015
September, 2018 − Rev. 11
1 Publication Order Number:
RB521S30T1/D
RB521S30
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
Reverse Leakage (VR = 10 V) I
Forward Voltage (IF = 200 mA) V
1
TA = 125°C
100m
TA = 75°C
10m
1m
100m
TA = 25°C
, FORWARD CURRENT (A)
F
10m
I
TA = −25°C
1m
0 0.1 0.2 0.3 0.4 0.5 0.6
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Characteristics
10m
R
F
− − 30.0
− − 0.50 Vdc
mA
1m
100m
10m
1m
100n
, REVERSE CURRENT (A)
R
I
10n
1n
0
510152025
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 2. Reverse Characteristics
20
18
16
14
12
10
8
6
4
, TOATAL CAPACITANCE (pF)
T
2
C
0
0
51015 30
, REVERSE VOLTAGE (VOLTS)
V
R
Figure 3. Total Capacitance
TA = 125°C
TA = 75°C
TA = 25°C
TA = −25°C
30
2520
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2
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