ON Semiconductor NVTFS6H880NL User Manual
MOSFET - Power, Single
N-Channel
80 V, 29 mW, 22 A
NVTFS6H880NL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
• Low Capacitance to Minimize Driver Losses
• NVTFS6H880NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
to Minimize Conduction Losses
DS(on)
V
(BR)DSS
80 V
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R
MAX ID MAX
DS(ON)
29 mW @ 10 V
38 mW @ 4.5 V
22 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 2, 3, 4)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 3, 4)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Notes 1, 2, 3)
q
JA
(Notes 1, 3)
= 1 A)
L(pk)
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 15
TC = 25°C
TC = 100°C 17
TA = 25°C
TA = 100°C 4.7
TA = 25°C
TA = 100°C 1.5
= 10 ms
p
P
P
I
TJ, T
E
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
stg
80 V
±20 V
22
33
6.6
3.1
83 A
−55 to
+175
28 A
70 mJ
260 °C
A
W
A
W
°C
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
Symbol Value Unit
°C/W
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
4.6
49
N−Channel
D (5 − 8)
G (4)
S (1, 2, 3)
MARKING
DIAGRAMS
1
WDFN8
(m8FL)
CASE 511AB
WDFNW8
(Full−Cut m8FL)
CASE 515AN
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
S
XXXX
S
AYWWG
S
G
G
XXXX
AYWWG
G
D
D
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
November, 2020 − Rev. 1
1 Publication Order Number:
NVTFS6H880NL/D
NVTFS6H880NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
DSS
GSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
V
= 80 V
DS
TJ = 25°C 10 mA
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
80 V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
Threshold Temperature Coefficient V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 20 mA
VGS = 10 V ID = 5 A 24 29
VGS = 4.5 V ID = 5 A 30 38
VDS = 8 V, ID = 10 A 31 S
1.2 2.0 V
−5.2 mV/°C
mW
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
G(TOT)
VGS = 0 V, f = 1 MHz, VDS = 40 V
VGS = 10 V, VDS = 40 V; ID = 10 A 9
VGS = 4.5 V, VDS = 40 V; ID = 10A
431
56
4
1
1.7
1.5
3 V
4 nC
pF
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
d(ON)
r
f
VGS = 4.5 V, VDS = 64 V,
= 10 A, RG = 2.5 W
I
D
12
7
9
ns
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
RR
SD
a
b
RR
VGS = 0 V,
I
= 5 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 10 A
S
TJ = 25°C 0.82 1.2
TJ = 125°C 0.68
25
17
8
17 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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NVTFS6H880NL
TYPICAL CHARACTERISTICS
20
15
10
, DRAIN CURRENT (A)
5
D
I
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
60
50
40
30
20
VGS = 10 V to 3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
3210
TJ = 25°C
= 5 A
I
D
20
VDS = 8 V
15
10
, DRAIN CURRENT (A)
5
D
I
0
34
TJ = 25°C
32
30
28
26
24
1.00.554
TJ = 25°C
TJ = 125°C
1.5 3.5
TJ = −55°C
3.02.00
2.5 4.0
VGS = 4.5 V
VGS = 10 V
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
10
0
4
3
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
6
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
VGS = 10 V
= 5 A
I
D
2.0
1.5
1.0
0.5
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
Figure 5. On−Resistance Variation with
Temperature
975
150
, DRAIN−TO−SOURCE RESISTANCE (mW)
108
R
, LEAKAGE (nA)
DSS
I
0.001
0.0001
17512510075250−25−50
22
20
DS(on)
2
3
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100
10
TJ = 175°C
TJ = 150°C
1
TJ = 125°C
0.1
TJ = 85°C
0.01
TJ = 25°C
25
554535155
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
4
51
7565
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