ON Semiconductor NVTFS6H850NL User Manual
NVTFS6H850NL
Power MOSFET
80 V, 8.6 mW, 64 A, Single N−Channel
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
• Low Capacitance to Minimize Driver Losses
• NVTFS6H850NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 2, 3, 4)
Power Dissipation
(Notes 1, 2, 3)
R
q
JC
Continuous Drain
Current R
(Notes 1, 3, 4)
Power Dissipation
(Notes 1, 3)
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
= 25°C unless otherwise noted)
J
Parameter
q
JC
q
JA
L(pk)
= 3.4 A)
Steady
State
Steady
State
TC = 25°C, t
Parameter Symbol Value Unit
TC = 25°C
TC = 100°C 45
TC = 25°C
TC = 100°C 37
TA = 25°C
TA = 100°C 10.4
TA = 25°C
TA = 100°C 1.9
= 10 ms
p
Symbol Value Unit
DSS
GS
I
D
P
D
I
D
P
D
I
DM
TJ, T
stg
S
E
AS
T
L
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
80 V
±20 V
64
73
14.8
3.9
308 A
−55 to
+175
61 A
208 mJ
260 °C
2.0
39
A
W
A
W
°C
°C/W
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V
(BR)DSS
80 V
G (4)
R
MAX ID MAX
DS(on)
8.6 mW @ 10 V
11 m W @ 4.5 V
N−Channel
D (5 − 8)
64 A
S (1, 2, 3)
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
S
XXXX
S
AYWWG
S
G
G
D
D
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
February, 2019 − Rev. 0
1 Publication Order Number:
NVTFS6H850NL/D
NVTFS6H850NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
V
(BR)DSS/TJ
DSS
GSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
V
= 80 V
DS
VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 5)
Drain−to−Source On Resistance
R
DS(on)
VGS = 10 V, ID = 10 A 7.1 8.6 mW
VGS = 4.5 V, ID = 10 A 8.9 11
Gate Threshold Voltage V
Gate Threshold Voltage Temperature
Coefficient
V
GS(TH)/TJ
Forward Transconductance g
GS(TH)
FS
VGS = VDS, ID = 70 mA
VDS = 8 V, ID = 10 A 64.1 S
CHARGES AND CAPACITANCES
Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Total Gate Charge Q
Total Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
iss
rss
oss
G(TOT)
G(TOT)
GS
GD
VGS = 0 V, f = 1.0 MHz
V
= 40 V
DS
VGS = 10 V, VDS = 40 V, ID = 10 A 26 nC
VGS = 4.5 V, VDS = 40 V, ID = 10 A
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Turn−Off Delay Time t
Rise Time t
Fall Time t
t
d(on)
d(off)
VGS = 4.5 V, VDS = 64 V,
= 10 A, RG = 2.5 mW
I
r
f
D
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 10 A
S
VGS = 0 V, dl/dt = 100 A/ms,
I
= 10 A
S
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
80 V
44.2 mV/°C
TJ = 25°C 10 mA
TJ = 125°C 250
1.2 1.6 2.0 V
−5.2 mV/°C
1450 pF
10 pF
182 pF
13
4.0
4.2
9
21
26
5
TJ = 25°C 0.8 1.2
TJ = 125°C 0.7
37
22
15
40 nC
ns
V
ns
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2
NVTFS6H850NL
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
147
023568
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 3.4 V to 10 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
70
VDS = 10 V
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
0.5 1.5 2.5 3.5
0 1.0 2.0 3.0 4.0
TJ = 25°C
TJ = 125°C
TJ = −55°C
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
24
22
20
18
16
14
12
10
8
6
, DRAIN−TO−SOURCE RESISTANCE (mW)
4
34 5 6 7 8 9101010 15 35 40 50
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
TJ = 25°C
= 10 A
I
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
9
8
7
6
5
25 30 45
20
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
VGS = 10 V
= 10 A
I
D
2.0
1.5
, NORMALIZED DRAIN−TO−
1.0
SOURCE RESISTANCE
DS(on)
R
0.5
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
1000
100
10
1
, LEAKAGE (nA)
0.1
DSS
I
0.01
0.001
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3
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
5152535
45 55
65 75
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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