ON Semiconductor NVTFS5C460NL User Manual

MOSFET – Power, Single

N-Channel

40 V, 4.8 mW, 74 A

NVTFS5C460NL

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVTFS5C460NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Notes 1, 2, 3, 4)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 3, 4)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature
Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

q

JC

(Notes 1, 2, 3)

q

JA

(Notes 1, 3)

= 4.6 A)

L(pk)

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter Symbol Value Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm

4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.

= 25°C unless otherwise noted)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 42

TC = 25°C

TC = 100°C 25

TA = 25°C

TA = 100°C 13

TA = 25°C

TA = 100°C 1.6

= 10 ms

p

P

P

I

TJ, T

E

R

q

R

q

2

, 2 oz. Cu pad.

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

JC

JA

stg

40 V

±20 V

74

50

19

3.1

321 A

−55 to
+175

42 A

104 mJ

260 °C

3.0

47.7

A

W

A

W

°C

°C/W

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V

(BR)DSS

40 V

G (4)

R

MAX ID MAX

DS(on)

4.8 mW @ 10 V

7.6 mW @ 4.5 V

N−Channel

D (5 − 8)

S (1, 2, 3)

74 A

MARKING DIAGRAM

1

WDFN8

(m8FL)

CASE 511AB

XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

1

S

XXXX

S

AYWWG

S
G

G

D
D
D
D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2019

December, 2019 − Rev. 2

1 Publication Order Number:

NVTFS5C460NL/D

NVTFS5C460NL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

V

= 40 V

DS

TJ = 25°C 10 mA

TJ = 125°C 250

VDS = 0 V, VGS = 20 V 100 nA

40 V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Drain−to−Source On Resistance R

V

GS(TH)

DS(on)

VGS = VDS, ID = 40 mA

VGS = 10 V, ID = 35 A 4 4.8 mW

1.2 2.0 V

VGS = 4.5 V, ID = 35 A 6.1 7.6

Forward Transconductance g

FS

VDS = 15 V, ID = 35 A 72 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

iss

oss

rss

G(TH)

GS

GD

G(TOT)

1300

VGS = 0 V, f = 1.0 MHz,

V

= 25 V

DS

530

22

2.5

VGS = 10 V, VDS = 20 V, ID = 35 A

4.7

3

VGS = 10 V, VDS = 20 V, ID = 35 A 11 nC

pF

nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

r

d(off)

f

VGS = 10 V, VDS = 20 V,

I

= 35 A

D

9.2

97

17

4.4

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 35 A

S

VGS = 0 V, dlS/dt = 100 A/ms,

I

= 35 A

S

TJ = 25°C 0.86 1.2

TJ = 125°C 0.75

29

14

14

12 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

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NVTFS5C460NL

TYPICAL CHARACTERISTICS

100

90

80

70

60

50

40

30

, DRAIN CURRENT (A)

D

I

20

10

0

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

14

12

10

8

4.0 V

VGS = 4.5 V to 10 V

1.2

0.8 1.6 2.0 2.4

TJ = 25°C

= 35 A

I

D

3.6 V

3.2 V

2.8 V

100

90

80

70

60

50

40

30

, DRAIN CURRENT (A)

D

I

20

10

2.80.40

0

8

7

6

5

4

TJ = 25°C

TJ = 125°C

VGS = 4.5 V

VGS = 10 V

21

TJ = −55°C

3

40

TJ = 25°C

5

6

4

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

R

2

476

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.0

VGS = 10 V

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

= 35 A

I

D

25 125

50 175

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

3

2

1

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

R

0

1098532

10

15 40

25

205

30 35

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

100K

10K

1K

100

, LEAKAGE (nA)

10

DSS

I

1

150100750−25−50

0.1

TJ = 175°C

TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

10 20

40353025155

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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