ON Semiconductor NVTFS014P04M8L User Manual
MOSFET – Power, Single,
P-Channel
-40 V, 13.8 mW, -49 A
NVTFS014P04M8L
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
• Low Capacitance to Minimize Driver Losses
• NVTFWS014P04M8L − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
to Minimize Conduction Losses
DS(on)
V
(BR)DSS
−40 V
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R
MAX ID MAX
DS(on)
13.8 mW @ −10 V
18.7 mW @ −4.5 V
−49 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 2, 4)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 3, 4)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Notes 1, 2)
q
JA
(Notes 1, 3)
= −6.1 A)
L(pk)
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C −35
TC = 25°C
TC = 100°C 30
TA = 25°C
TA = 100°C −8
TA = 25°C
TA = 100°C 1.6
= 10 ms
p
P
P
I
TJ, T
E
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
stg
−40 V
±20 V
−49
61
−11.3
3.2
224 A
−55 to
+175
−50 A
143 mJ
260 °C
A
W
A
W
°C
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Junction−to−Case − Steady State (Drain)
(Notes 1, 2, 4)
Junction−to−Ambient − Steady State (Note 3)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
3. Surface−mounted on FR4 board using a 650 mm
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
Symbol Value Unit
°C/W
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
2.5
47
P−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
S
XXXX
S
AYWWG
S
G
G
D
D
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
May, 2020 − Rev. 4
1 Publication Order Number:
NVTFS014P04M8L/D
NVTFS014P04M8L
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
V
(BR)DSS/TJ
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
DSS
GSS
VGS = 0 V, ID = −250 mA
VGS = 0 V,
V
= −40 V
DS
TJ = 25°C −1.0 mA
TJ = 125°C −1000
VDS = 0 V, VGS = "20 V "100 nA
−40 V
21 mV/°C
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
V
Coefficient
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = −420 mA
VGS = −10 V, ID = −15 A 10 13.8 mW
−1.0 −2.4 V
5.1 mV/°C
VGS = −4.5 V, ID = −7.5 A 14.6 18.7
Forward Transconductance g
FS
VDS = −1.5 V, ID = −15 A 42 S
CHARGES AND CAPACITANCES
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
iss
oss
rss
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1.0 MHz,
V
= −20 V
DS
VDS = −20 V,
I
= −20 A
D
VGS = −4.5V 12.5
VGS = −10V 26.5
VGS = −10 V, VDS = −20 V,
I
= −30 A
D
1734
682
32
2.6
5.6
3.8
3.2 V
pF
nC
nC
SWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 6)
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t
d(on)
r
d(off)
f
VGS = −4.5 V, VDS = −20 V,
= −30 A, RG = 2.5 W
I
D
11.5
97.4
44.5
38.2
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= −15 A
S
TJ = 25°C −0.86 −1.25
TJ = 125°C −0.74
VGS = 0 V, dIS/dt = 100 A/ms,
I
= −10 A
S
V
34.9
ns
15.8
19.1
16.3 52 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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NVTFS014P04M8L
TYPICAL CHARACTERISTICS
120
VGS = 5.5 V to 10 V
100
80
60
40
, DRAIN CURRENT (A)
D
−I
20
..
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
32
28
24
20
(mW)
16
VGS = 4.8 V
VGS = 4.5 V
VGS = 4.0 V
VGS = 3.6 V
VGS = 3.2 V
VGS = 2.8 V
VGS = 2.6 V
VGS = 2.4 V
TJ = 25°C
ID = −15 A
120
VDS = −3 V
100
80
60
40
, DRAIN CURRENT (A)
D
−I
20
TJ = −55°C
= 25°C
T
J
T
= 125°C
J
0
0123456
−VGS, GATE−TO−SOURCE VOLTAGE (V)
40
30
20
(mW)
V
GS
= −4.5 V
12
, DRAIN−TO−SOURCE RESISTANCE
8
4
DS(ON)
R
2345678910
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
VGS = −10 V
I
= −15 A
D
2
1.5
1
RESISTANCE
0.5
, NORMALIZED DRAIN−TO−SOURCE
DS(ON)
0
R
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
, DRAIN−TO−SOURCE RESISTANCE
DS(ON)
R
10
0
1 1121314151617181
V
GS
= −10 V
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1,E−04
1,E−05
1,E−06
1,E−07
, LEAKAGE (A)
1,E−08
DSS
−I
1,E−09
1,E−10
0 5 10 15 20 25 30 35 40
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
T
= 85°C
J
T
= 125°C
J
T
= 150°C
J
T
= 175°C
J
Figure 5. On−Resistance Variation with
Temperature
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Figure 6. Drain−to−Source Leakage Current
vs. Voltage
3
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