Page 1
NVTFS005N04C
Power MOSFET
40 V, 5.6 mW, 69 A, Single N−Channel
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
• Low Capacitance to Minimize Driver Losses
• NVTFWS005N04C − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 2, 3, 4)
Power Dissipation
(Notes 1, 2, 3)
R
q
JC
Continuous Drain
Current R
(Notes 1, 3, 4)
Power Dissipation
(Notes 1, 3)
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
= 25°C unless otherwise noted)
J
Parameter
q
JC
q
JA
L(pk)
= 4.6 A)
Steady
State
Steady
State
TA = 25°C, t
Parameter Symbol Value Unit
TC = 25°C
TC = 100°C 39
TC = 25°C
TC = 100°C 16
TA = 25°C
TA = 100°C 12
TA = 25°C
TA = 100°C 1.6
= 10 ms
p
Symbol Value Unit
DSS
GS
I
D
P
D
I
D
P
D
I
DM
TJ, T
stg
S
E
AS
T
L
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
40 V
±20 V
69
50
17
3.1
297 A
−55 to
+175
42 A
103 mJ
260 °C
3.0
47.7
A
W
A
W
°C
°C/W
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V
(BR)DSS
40 V
G (4)
R
MAX ID MAX
DS(on)
5.6 mW @ 10 V
N−Channel
D (5 − 8)
69 A
S (1, 2, 3)
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
1
S
XXXX
S
AYWWG
S
G
G
D
D
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
January, 2019 − Rev. 1
1 Publication Order Number:
NVTFS005N04C/D
Page 2
NVTFS005N04C
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
DSS
GSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
V
= 40 V
DS
VDS = 0 V, VGS = 20 V − − 100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Drain−to−Source On Resistance R
Forward Transconductance g
V
GS(TH)
DS(on)
FS
VGS = VDS, ID = 40 mA
VGS = 10 V, ID = 35 A − 4.7 5.6
VDS = 15 V, ID = 35 A − 53 − S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Total Gate Charge Q
C
iss
oss
rss
G(TH)
GS
GD
G(TOT)
VGS = 0 V, f = 1.0 MHz,
V
= 25 V
DS
VGS = 10 V, VDS = 32 V, ID = 35 A
VGS = 10 V, VDS = 32 V, ID = 35 A − 16 − nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(on)
d(off)
r
f
VGS = 10 V, VDS = 32 V,
I
= 35 A
D
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 35 A
S
VGS = 0 V, dlS/dt = 100 A/ms,
I
= 35 A
S
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
40 − − V
TJ = 25°C − − 10 mA
TJ = 125°C − − 250
2.5 − 3.5 V
− 1000 −
− 530 −
− 22 −
− 3.2 −
− 5.7 −
− 2.7 −
− 11 −
− 72 −
− 24 −
− 8 −
TJ = 25°C − 0.87 1.2
TJ = 125°C − 0.75 −
− 36 −
− 17 −
− 18 −
− 16 − nC
mW
pF
nC
ns
V
ns
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2
Page 3
NVTFS005N04C
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
60
, DRAIN CURRENT (A)
D
I
40
20
VGS = 10 V
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
7.0
6.5
6.0
5.5
9 V
8 V
4.0 V
2
7.0 V
6.0 V
5.6 V
5.2 V
4.8 V
4.4 V
TJ = 25°C
= 35 A
I
D
120
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
310
0
6.0
5.5
5.0
4.5
TJ = 25°C
TJ = 25°C
TJ = 125°C
4.5
TJ = −55°C
5.0 5.5
VGS = 10 V
6.04.03.53.0
5.0
4.5
, DRAIN−TO−SOURCE RESISTANCE (mW)
4.0
DS(on)
R
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
3
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
6
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
= 35 A
I
D
50 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
4.0
3.5
, DRAIN−TO−SOURCE RESISTANCE (mW)
3.0
1098754
10 30
DS(on)
R
40 60
50 70
8020
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100K
10K
1K
100
, LEAKAGE (nA)
10
DSS
I
1
15012510075250−25−50
0.1
10 20
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
40353025155
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
Page 4
NVTFS005N04C
TYPICAL CHARACTERISTICS
10K
1K
100
C, CAPACITANCE (pF)
VGS = 0 V
T
f = 1 MHz
10
1K
100
t
d(off)
t
t, TIME (ns)
d(on)
10
1
Figure 9. Resistive Switching Time Variation
10
9
8
C
C
ISS
OSS
7
Q
6
GS
Q
GD
5
4
3
2
= 25°C
J
C
RSS
3525155
403020100
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
48
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
VGS = 0 V
t
r
10
t
f
VGS = 10 V
= 32 V
V
DS
I
= 35 A
D
, SOURCE CURRENT (A)
S
I
1
TJ = 125°C
TJ = 25°C TJ = −55°C
100101
V
RG, GATE RESISTANCE (W)
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
VDS = 32 V
= 25°C
T
J
I
= 35 A
D
1412620
0.90.8 1.00.70.60.50.40.3
16
1000
100
10
VGS ≤ 10 V
Single Pulse
TC = 25°C
, DRAIN CURRENT(A)
1
D
I
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
R
Limit
DS(on)
Thermal Limit
Package Limit
Safe Operating Area
10 ms
0.5 ms
1 ms
10 ms
100
100
10
(A)
PEAK
I
1
0.1
10001010.1
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4
T
= 25°C
J(initial)
T
= 100°C
J(initial)
0.00001 0.01
Figure 12. I
0.0001
PEAK
vs. Time in Avalanche
0.001
Page 5
100
R(t) (°C/W)
0.1
Duty Cycle = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
Single Pulse
NVTFS005N04C
TYPICAL CHARACTERISTICS
0.01
10010.010.00001 0.001
PULSE TIME (sec)
1000100.10.00010.000001
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NVTFS005N04CTAG 05NC WDFN8
(Pb−Free)
NVTFWS005N04CTAG 05NW WDFN8
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1500 / Tape & Reel
1500 / Tape & Reel
†
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5
Page 6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
1
SCALE 2:1
0.05
E2
G
0.10 C
0.10 C
8X
C
A0.10 B
C
4X
E3
1234
TOP VIEW
SIDE VIEW
b
L
14
8
BOTTOM VIEW
D1
78
D2
2X
C
0.20
D
A
B
2X
56
E
E1
0.20 C
c
A
DETAIL A
e/2
K
M
5
L1
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
4X
q
A1
6X
e
DETAIL A
C
SEATING
PLANE
0.75
DATE 23 APR 2012
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
DIM MIN NOM
MILLIMETERS
A 0.70 0.75
A1 0.00 −−−
b 0.23 0.30
c 0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
E3 0.23 0.30 0.40
e 0.65 BSC
G 0.30 0.41
K 0.65 0.80
L 0.30 0.43
L1 0.06 0.13
M 1.40 1.50
q 0 −−−
3.30 BSC
3.30 BSC
_
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
1.60
12
_
INCHES
MIN NOM
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.130 BSC
0.116 0.120
0.078 0.083
0.130 BSC
0.116 0.120
0.058 0.063
0.009 0.012 0.016
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.055 0.059
0 −−−
_
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
0.063
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
0.57
8X
0.650.42
PITCH
2.30
4X
0.66
3.60
12
_
GENERIC
MARKING DIAGRAM*
1
XXXXX
AYWWG
G
XXXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON30561E
WDFN8 3.3X3.3, 0.65P
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
0.47
2.37
3.46
DIMENSION: MILLIMETERS
PAGE 1 OF 1
© Semiconductor Components Industries, LLC, 2019
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