ON Semiconductor NTA7002N, NVTA7002N User Manual
NTA7002N, NVTA7002N
MOSFET – Single,
N-Channel, Small Signal,
Gate ESD Protection, SC-75
30 V, 154 mA
Features
• Low Gate Charge for Fast Switching
• Small 1.6 x 1.6 mm Footprint
• ESD Protected Gate
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Management Load Switch
• Level Shift
• Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc.
MAXIMUM RATINGS (T
Parameter Symbol Value Unit
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature TJ,
Continuous Source Current (Body Diode) I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
= 25°C unless otherwise noted)
J
DSS
GS
Steady State = 25°C I
Steady State = 25°C P
tP v 10 ms
T
R
I
DM
STG
SD
T
D
D
L
q
JA
30 V
"10 V
154 mA
300 mW
618 mA
−55 to
150
154 mA
260 °C
416 °C/W
°C
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R
DS(on)
V
(BR)DSS
30 V 154 mA
Typ @ V
1.4 W @ 4.5 V
2.3 W @ 2.5 V
1
GS
3
N−Channel
ID MAX
(Note 1)
2
PIN CONNECTIONS
SC−75 (3−Leads)
Gate31
Drain
Source
SC−75 / SOT−416
CASE 463
2
(Top View)
3
2
1
STYLE 5
T6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
3
T6 MG
G
1
2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
May, 2019 − Rev. 5
1 Publication Order Number:
NTA7002N/D
NTA7002N, NVTA7002N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current I
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
Gate−to−Source Leakage Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
DSS
DSS
GSS
GSS
GSS
VGS = 0 V, ID = 100 mA
VGS = 0 V, VDS = 30 V 1.0
VGS = 0 V, VDS = 20 V,
VDS = 0 V, VGS = ±10 V ±25
VDS = 0 V, VGS = ±5 V ±1.0
VDS = 0 V, VGS = ±5 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain−to−Source On Resistance R
V
GS(TH)
DS(on)
VDS = VGS, ID = 100 mA
VGS = 4.5 V, ID = 154 mA 1.4 7.0
VGS = 2.5 V, ID = 154 mA 2.3 7.5
Forward Transconductance g
FS
VDS = 3 V, ID = 154 mA 80 mS
CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
C
ISS
OSS
RSS
VDS = 5.0 V, f = 1 MHz,
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
VGS = 4.5 V, VDS = 5.0 V,
I
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
VGS = 0 V, IS = 154 mA 0.77 0.9 V
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
T = 85 °C
T = 85 °C
V
= 0 V
GS
= 75 mA, RG = 10 W
D
30 V
1.0
±1.0
0.5 1.0 1.5 V
11.5 20
10 15
3.5 6.0
13 ns
15
98
60
mA
mA
mA
mA
mA
W
pF
ns
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2
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