ON Semiconductor NTA7002N, NVTA7002N User Manual

NTA7002N, NVTA7002N

MOSFET – Single,

N-Channel, Small Signal,
Gate ESD Protection, SC-75

30 V, 154 mA

Features

• Low Gate Charge for Fast Switching

• Small 1.6 x 1.6 mm Footprint

• ESD Protected Gate

• NV Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Power Management Load Switch

• Level Shift

• Portable Applications such as Cell Phones, Media Players,

Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc.

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current (Note 1)

Power Dissipation
(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Continuous Source Current (Body Diode) I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1)

1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise noted)

J

DSS

GS

Steady State = 25°C I

Steady State = 25°C P

tP v 10 ms

T

R

I

DM

STG

SD

T

D

D

L

q

JA

30 V

"10 V

154 mA

300 mW

618 mA

−55 to
150

154 mA

260 °C

416 °C/W

°C

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R

DS(on)

V

(BR)DSS

30 V 154 mA

Typ @ V

1.4 W @ 4.5 V

2.3 W @ 2.5 V

1

GS

3

N−Channel

ID MAX

(Note 1)

2

PIN CONNECTIONS

SC−75 (3−Leads)

Gate31

Drain

Source

SC−75 / SOT−416

CASE 463

2

(Top View)

3

2

1

STYLE 5

T6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

MARKING DIAGRAM

3

T6 MG

G

1

2

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

© Semiconductor Components Industries, LLC, 2012

May, 2019 − Rev. 5

1 Publication Order Number:

NTA7002N/D

NTA7002N, NVTA7002N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current I

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

Gate−to−Source Leakage Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

DSS

DSS

GSS

GSS

GSS

VGS = 0 V, ID = 100 mA

VGS = 0 V, VDS = 30 V 1.0

VGS = 0 V, VDS = 20 V,

VDS = 0 V, VGS = ±10 V ±25

VDS = 0 V, VGS = ±5 V ±1.0

VDS = 0 V, VGS = ±5 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Drain−to−Source On Resistance R

V

GS(TH)

DS(on)

VDS = VGS, ID = 100 mA

VGS = 4.5 V, ID = 154 mA 1.4 7.0

VGS = 2.5 V, ID = 154 mA 2.3 7.5

Forward Transconductance g

FS

VDS = 3 V, ID = 154 mA 80 mS

CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

C

ISS

OSS

RSS

VDS = 5.0 V, f = 1 MHz,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 5.0 V,

I

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

VGS = 0 V, IS = 154 mA 0.77 0.9 V

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

T = 85 °C

T = 85 °C

V

= 0 V

GS

= 75 mA, RG = 10 W

D

30 V

1.0

±1.0

0.5 1.0 1.5 V

11.5 20

10 15

3.5 6.0

13 ns

15

98

60

mA

mA

mA

mA

mA

W

pF

ns

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2

NTA7002N, NVTA7002N

TYPICAL PERFORMANCE CURVES

0.2

0.18

0.16

0.14

5 V

2.8 V

2.4 V

0.12

0.1

0.08

0.06

DRAIN CURRENT (AMPS)

0.04

D,

I

0.02

0

0

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS

Figure 1. On−Region Characteristics

2.5
VGS = 4.5 V

2

1.5

VGS = 10 V

TJ = 125°C

TJ = 25°C

0.2
VDS = 5 V

0.16

2 V

0.12

0.08

DRAIN CURRENT (AMPS)

0.04

D,

2.0

I

0

0.8 1.6

0.6 1.4 2

1.4 V

1.2 V

1.20.8

1.60.4

TJ = 25°C

TJ = 125°C

1.2

TJ = −55°C

1.81

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

2.5
TJ = 25°C

2

1.5

VGS = 2.5 V

TJ = 25°C

1

TJ = −55°C

DRAIN−TO−SOURCE RESISTANCE (W)

0.5
0 0.15

DS(on),

R

0.05

ID, DRAIN CURRENT (AMPS)

0.1

Figure 3. On−Resistance vs. Drain Current and

Temperature

2

ID = 0.15 A

1.8

1.6

1.4

1.2

0.8

DRAIN−TO−SOURCE

0.6

0.4

DS(on),

R

RESISTANCE (NORMALIZED)

0.2

= 4.5 V

V

GS

1

0

−50 0−25 25

TJ, JUNCTION TEMPERATURE (°C)

50 150

75

1

DRAIN−TO−SOURCE RESISTANCE (W)

0.5

0.2

DS(on),

R

1000

100

, LEAKAGE (nA)

10

DSS

I

1

125100 0

VGS = 4.5 V

0.050 0.150.1

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 125°C

105

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

15

20

25

0.2

30

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

vs. Voltage

3

NTA7002N, NVTA7002N

TYPICAL PERFORMANCE CURVES

25

20

C

iss

C

rss

TJ = 25°C

15

10

C

iss

C, CAPACITANCE (pF)

5

0

10 0 5 105

VDS = 0 V VGS = 0 V

V

V

DS

GS

15

C

oss

C

rss

20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

0.16
VGS = 0 V

0.14

0.12

0.1

= 25°C

T

J

1000

VDD = 5.0 V

= 75 mA

I

D

V

= 4.5 V

GS

t

100

t, TIME (ns)

10

1

1 10 100

d(off)

t

d(on)

t

f

t

r

RG, GATE RESISTANCE (OHMS)

Figure 8. Resistive Switching Time

Variation vs. Gate Resistance

0.08

0.06

0.04

, SOURCE CURRENT (AMPS)

S

0.02

I

0

0.5 0.65
V

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

SD

0.70.55

0.75

0.80.6

Figure 9. Diode Forward Voltage vs. Current

ORDERING INFORMATION

Device Package Shipping

NTA7002NT1G SC−75

3000 / Tape & Reel

(Pb−Free)

NVTA7002NT1G SC−75

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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4

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

3

1

SCALE 4:1

2

3 PL

b

0.20 (0.008) D

M

C

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

−E−

2

3

1

L

STYLE 2:

PIN 1. ANODE

STYLE 5:

PIN 1. GATE

e

−D−

H

E

A1

2. N/C

3. CATHODE

2. SOURCE

3. DRAIN

SC−75/SOT−416

CASE 463−01

ISSUE G

0.20 (0.008) E

A

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

SOLDERING FOOTPRINT*

0.356

0.014

DATE 07 AUG 2015

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

DIM MIN NOM MAX

A 0.70 0.80 0.90

A1 0.00 0.05 0.10

b

0.15 0.20 0.30 0.006 0.008 0.012

C 0.10 0.15 0.25
D 1.55 1.60 1.65
E

0.70 0.80 0.90 0.027 0.031 0.035

e 1.00 BSC
L 0.10 0.15 0.20

H

1.50 1.60 1.70

E

INCHES

MIN NOM MAX

0.027 0.031 0.035

0.000 0.002 0.004

0.004 0.006 0.010

0.061 0.063 0.065

0.04 BSC

0.004 0.006 0.008

0.060 0.063 0.067

GENERIC

MARKING DIAGRAM*

XX M

G

1

XX = Specific Device Code
M = Date Code
G = Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.

1.803

0.071

0.508

0.020

0.787

0.031

1.000

0.039

SCALE 10:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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© Semiconductor Components Industries, LLC, 2019

98ASB15184C

SC−75/SOT−416

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