ON Semiconductor NVMFS6H801NL User Manual
MOSFET - Power, Single
N-Channel
80 V, 2.7 mW, 160 A
NVMFS6H801NL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• NVMFS6H801NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
V
(BR)DSS
80 V
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R
MAX ID MAX
DS(ON)
2.7 mW @ 10 V
3.3 mW @ 4.5 V
160 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1, 2)
= 12.2 A)
L(pk)
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 113
TC = 25°C
TC = 100°C 83
TA = 25°C
TA = 100°C 17
TA = 25°C
TA = 100°C 1.9
= 10 ms
p
P
P
I
TJ, T
E
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
stg
80 V
±20 V
160
167
24
3.8
900 A
−55 to
+175
139 A
706 mJ
260 °C
A
W
A
W
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
0.9
39
°C/W
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX = 6H801L
XXXXXX = (NVMFS6H801NL) or
XXXXXX = 801LWF
XXXXXX = (NVMFS6H801NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
XXXXXX
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
March, 2020 − Rev. 0
1 Publication Order Number:
NVMFS6H801NL/D
NVMFS6H801NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 80 V
DS
TJ = 25 °C 10
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
80 V
45.6
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 50 A 2.2 2.7
VGS = 4.5 V ID = 50 A 2.6 3.3
VDS = 8 V, ID = 50 A 240 S
1.2 2.0 V
−5.3 mV/°C
mW
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
Total Gate Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
G(TOT)
VGS = 0 V, f = 1 MHz, VDS = 40 V
VGS = 10 V, VDS = 40 V; ID = 50 A 90
VGS = 4.5 V, VDS = 40 V; ID = 50 A
5126
657
30
8
14
16
3 V
44 nC
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 64 V,
= 50 A, RG = 2.5 W
I
D
25
99
50
20
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 50 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 50 A
S
TJ = 25°C 0.76 1.2
TJ = 125°C 0.61
66
38
28
92 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVMFS6H801NL
TYPICAL CHARACTERISTICS
160
140
120
100
80
60
, DRAIN CURRENT (A)
40
D
I
20
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
7
6
5
4
3
2
3.2 V
VGS = 10 V to 3.4 V
3210
TJ = 25°C
= 50 A
I
D
3.0 V
2.8 V
2.6 V
160
140
120
100
80
60
, DRAIN CURRENT (A)
40
D
I
20
0
4
TJ = 25°C
3
2
1.00.554
TJ = 25°C
TJ = 125°C
1.5 3.5
TJ = −55°C
2.5 4.0
3.02.00
VGS = 4.5 V
VGS = 10 V
, DRAIN−TO−SOURCE RESISTANCE (mW)
DS(on)
R
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
1
0
4
3
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
6
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
VGS = 10 V
= 50 A
I
D
2.0
1.5
1.0
0.5
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
Figure 5. On−Resistance Variation with
Temperature
975
150
, DRAIN−TO−SOURCE RESISTANCE (mW)
108
R
, LEAKAGE (nA)
DSS
I
0.001
0.0001
17512510075250−25−50
DS(on)
1
10 20
30
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
TJ = 175°C
100
TJ = 150°C
10
TJ = 125°C
1
TJ = 85°C
0.1
TJ = 25°C
0.01
25
554535155
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
40
500
7565
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