ON Semiconductor NVMFS6B25NL Users manual

NVMFS6B25NL

-

-

Power MOSFET

100 V, 24 mW, 33 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• NVMFS6B25NLWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain Cur

rent R

q

JC

3)
Power Dissipation

(Notes 1, 2)

R

q

JC

Continuous Drain Cur
rent R

q

JA

3)
Power Dissipation

(Notes 1 & 2)

R

q

JA

Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche

Energy (I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

= 25°C unless otherwise noted)

J

Parameter

(Notes 1, 2,

Steady

State

(Notes 1, 2,

Steady

State

TA = 25°C, t

= 2.0 A)

L(pk)

Parameter Symbol Value Unit

TC = 25°C

TC = 100°C 23

TC = 25°C

TC = 100°C 31

TA = 25°C

TA = 100°C 6

TA = 25°C

TA = 100°C 1.8

= 10 ms

p

Symbol Value Unit

DSS

GS

I

D

P

D

I

D

P

D

I

DM

stg

S

E

AS

T

L

R

q

JC

R

q

JA

2

, 2 oz. Cu pad.

100 V
±16 V

33

62

8

3.6

177 A

−55 to
+ 175

48 A

170 mJ

260 °C

2.4
42

A

W

A

W

°C

°C/W

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V

(BR)DSS

100 V

G (4)

R

MAX ID MAX

DS(ON)

24 mW @ 10 V

39 mW @ 4.5 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

33 A

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

6B25NL = NVMFS6B25NL
6B25L W= NVMFS6B25NLWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

D

S

6B25xx

S

AYWZZ

S

G

D

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information on
page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2015

July, 2017 − Rev. 1

1 Publication Order Number:

NVMFS6B25NL/D

NVMFS6B25NL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 80 V

DS

TJ = 25°C 10

TJ = 125°C 250

VDS = 0 V, VGS = 16 V 100 nA

100 V

64

mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage
Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

V

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V

VGS = 4.5 V 31 39

ID = 20 A

1.0 3.0 V

−5.4 mV/°C

19.8 24
mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C

C

ISS
OSS
RSS

VGS = 0 V, f = 1 MHz, VDS = 25 V

905
302

23

pF

VGS = 4.5 V, VDS = 50 V; ID = 25 A 6.4

Total Gate Charge Q

Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V

G(TOT)

G(TH)

GS
GD
GP

VGS = 10 V, VDS = 50 V; ID = 25 A

13.5

1.8

3.6

1.8

3.7 V

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t
Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 4.5 V, VDS = 50 V,

= 25 A, RG = 1.0 W

I

D

9.6
79

18.3
73

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

V

SD

VGS = 0 V,

IS = 25 A

RR

a
b
RR

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 20 A

S

TJ = 25°C 0.91 1.2

TJ = 125°C 0.81

40.4

24.5

15.9

50 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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2

NVMFS6B25NL

TYPICAL CHARACTERISTICS

30

VGS = 10 V

to 5 V

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0.5 1.5

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

38
36
34
32
30
28
26
24
22
20
18

, DRAIN−TO−SOURCE RESISTANCE (mW)

16

DS(on)

R

489

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

4.5 V

610753

Voltage

2.0

ID = 20 A

= 25°C

T

J

2.5

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

2.6 V

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

R

0

40

35

30

25

20

15

10

3.01.00

VDS = 10 V

TJ = 25°C

5

TJ = 25°C

10 15

TJ = 125°C

20 30 40 4535

TJ = −55°C

3

VGS = 4.5 V

VGS = 10 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

54210

5025

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

R

2.4
ID = 20 A

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

= 10 V

V

GS

50

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

100K

10K

1K

100

, LEAKAGE (nA)

DSS

I

10

15012510075250−25−50

1

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3

TJ = 150°C

TJ = 125°C

TJ = 85°C

55453525155

75

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

958565175