ON Semiconductor NVMFS5H600NL User Manual
MOSFET – Power, Single
N-Channel
60 V, 1.3 mW, 250 A
NVMFS5H600NL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1, 2)
= 26 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 160
TC = 25°C
TC = 100°C 63
TA = 25°C
TA = 100°C 22
TA = 25°C
TA = 100°C 1.3
= 10 ms
p
P
P
I
E
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
60 V
±20 V
250
160
35
3.3
900 A
−55 to
+ 175
170 A
338 mJ
260 °C
0.80
38
A
W
A
W
°C
°C/W
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V
(BR)DSS
60 V
G (4)
R
MAX ID MAX
DS(ON)
1.3 mW @ 10 V
1.7 mW @ 4.5 V
D (5)
S (1,2,3)
N−CHANNEL MOSFET
250 A
MARKING
DIAGRAM
G
S
S
S
D
D
5H600L
AYWZZ
D
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5H600L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
October, 2019 − Rev. 2
1 Publication Order Number:
NVMFS5H600NL/D
NVMFS5H600NL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 60 V
DS
TJ = 25 °C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
60 V
34.3
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 50 A 1.1 1.3
VGS = 4.5 V ID = 50 A 1.4 1.7
VDS =15 V, ID = 50 A 280 S
1.2 2.0 V
−5.0 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Output Charge Q
Total Gate Charge Q
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
OSS
G(TOT)
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 30 V
VGS = 0 V, VDD = 30 V 100
VGS = 4.5 V, VDS = 30 V; ID = 50 A 40
VGS = 10 V, VDS = 30 V; ID = 50 A 89
VGS = 4.5 V, VDS = 30 V; ID = 50 A
6680
1230
30
11
20
6.5
3.0 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 4.5 V, VDS = 30 V,
= 50 A, RG = 2.5 W
I
D
28
130
88
160
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 50 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
TJ = 25°C 0.77 1.2
TJ = 125°C 0.63
72
36
36
60 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVMFS5H600NL
TYPICAL CHARACTERISTICS
250
225
200
175
150
125
100
75
, DRAIN CURRENT (A)
D
I
50
25
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
3.7
3.3
2.9
2.5
2.1
1.7
1.3
0.9
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.5
DS(on)
R
43
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10 V
= 50 A
I
D
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Voltage
50
Temperature
10 V to 3.4 V
VGS = 2.6 V
TJ = 25°C
= 20 A
I
D
3.2 V
3.0 V
2.8 V
1.00.50
10987652
1000000
15012510075250−25−50
500
450
400
350
300
250
200
150
, DRAIN CURRENT (A)
D
I
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
, DRAIN−TO−SOURCE RESISTANCE (mW)
0.8
DS(on)
R
VDS = 10 V
50
0
TJ = 25°C
Figure 4. On−Resistance vs. Drain Current and
100000
10000
1000
, LEAKAGE (nA)
100
DSS
I
10
1
Figure 6. Drain−to−Source Leakage Current
TJ = 25°C
TJ = 125°C
Gate Voltage
TJ = 175°C
TJ = 125°C
TJ = 85°C
TJ = 25°C
vs. Voltage
TJ = −55°C
VGS = 4.5 V
VGS = 10 V
4.03.02.52.01.51.00.50
3.5
130110 1509070503010
55453525155
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