ON Semiconductor NVMFS5H600NL User Manual

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Page 1

MOSFET – Power, Single

N-Channel

60 V, 1.3 mW, 250 A

NVMFS5H600NL

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Notes 1, 3)

Power Dissipation R

Continuous Drain Current R (Notes 1, 2, 3)

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(Note 1)

(Notes 1, 2)

= 26 A)

L(pk)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

= 25°C unless otherwise noted)

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 160

TC = 25°C

TC = 100°C 63

TA = 25°C

TA = 100°C 22

TA = 25°C

TA = 100°C 1.3

= 10 ms

, 2 oz. Cu pad.

DSS

stg

60 V

±20 V

250

160

3.3

900 A

−55 to + 175

170 A

338 mJ

260 °C

0.80

°C

°C/W

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(BR)DSS

60 V

G (4)

MAX ID MAX

DS(ON)

1.3 mW @ 10 V

1.7 mW @ 4.5 V

D (5)

S (1,2,3)

N−CHANNEL MOSFET

250 A

MARKING DIAGRAM

S S S

D 5H600L AYWZZ

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

5H600L = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

October, 2019 − Rev. 2

1 Publication Order Number:

NVMFS5H600NL/D

Page 2

NVMFS5H600NL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

= 60 V

TJ = 25 °C 10

TJ = 125°C 250

VDS = 0 V, VGS = 20 V 100 nA

60 V

34.3

mV/°C

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 50 A 1.1 1.3

VGS = 4.5 V ID = 50 A 1.4 1.7

VDS =15 V, ID = 50 A 280 S

1.2 2.0 V

−5.0 mV/°C

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Output Charge Q

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

ISS

OSS

RSS

OSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz, VDS = 30 V

VGS = 0 V, VDD = 30 V 100

VGS = 4.5 V, VDS = 30 V; ID = 50 A 40

VGS = 10 V, VDS = 30 V; ID = 50 A 89

VGS = 4.5 V, VDS = 30 V; ID = 50 A

6680

1230

6.5

3.0 V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

VGS = 4.5 V, VDS = 30 V,

= 50 A, RG = 2.5 W

130

160

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V,

= 50 A

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 50 A

TJ = 25°C 0.77 1.2

TJ = 125°C 0.63

60 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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Page 3

NVMFS5H600NL

TYPICAL CHARACTERISTICS

250

225

200

175

150

125

100

, DRAIN CURRENT (A)

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

3.7

3.3

2.9

2.5

2.1

1.7

1.3

0.9

, DRAIN−TO−SOURCE RESISTANCE (mW)

0.5

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

DS(on)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

VGS = 10 V

= 50 A

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Voltage

Temperature

10 V to 3.4 V

VGS = 2.6 V

TJ = 25°C

= 20 A

3.2 V

3.0 V

2.8 V

1.00.50

10987652

1000000

15012510075250−25−50

500

450

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

, DRAIN−TO−SOURCE RESISTANCE (mW)

0.8

DS(on)

VDS = 10 V

TJ = 25°C

Figure 4. On−Resistance vs. Drain Current and

100000

10000

1000

, LEAKAGE (nA)

100

DSS

Figure 6. Drain−to−Source Leakage Current

TJ = 25°C

TJ = 125°C

Gate Voltage

TJ = 175°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

vs. Voltage

TJ = −55°C

VGS = 4.5 V

VGS = 10 V

4.03.02.52.01.51.00.50

3.5

130110 1509070503010

55453525155

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Page 4

NVMFS5H600NL

TYPICAL CHARACTERISTICS

1E+4

1E+3

1E+2

C, CAPACITANCE (pF)

1E+1

1000

100

t, TIME (ns)

Figure 9. Resistive Switching Time Variation

ISS

OSS

RSS

VGS = 0 V

= 25°C

f = 1 MHz

6050403020100

, GATE−TO−SOURCE VOLTAGE (V)

20 50 80

VDS = 30 V

= 25°C

= 50 A

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total

Charge

RG, GATE RESISTANCE (W)

d(off)

VGS = 4.5 V

= 30 V

= 50 A

d(on)

100101

100

, SOURCE CURRENT (A)

TJ = 125°C

0.1

, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = 25°C

TJ = −55°C

Figure 10. Diode Forward Voltage vs. Current

vs. Gate Resistance

9070604030100

0.90.80.70.60.50.40.3

1000

(A)

100

500 ms

1 ms

= 25°C

10 ms

J(initial)

= 100°C

DRAIN CURRENT (A)

Limit

DS(on)

Thermal Limit

PEAK

Package Limit

1001010.1

100E−6 10E−3

1E−3

VDS (V) TIME IN AVALANCHE (s)

Figure 11. Safe Operating Area Figure 12. I

vs. Time in Avalanche

PEAK

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Page 5

NVMFS5H600NL

†

100

50% Duty Cycle

20%

10%

(t) (°C/W)

0.1

Single Pulse

0.01

0.010.001 10.0001 0.10.00001 100.000001

PULSE TIME (sec)

Figure 13. Thermal Characteristics

DEVICE ORDERING INFORMATION

Device Marking Package Shipping

NVMFS5H600NLT1G 5H600L DFN5

NVMFS5H600NLT3G 5H600L DFN5

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NVMFS5H600NL 650 mm2, 2 oz., Cu Single Layer Pad

100 1000

1500 / Tape & Reel

(Pb−Free)

5000 / Tape & Reel

(Pb−Free)

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Page 6

DFN5 5x6, 1.27P

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

2 X

0.20 C

0.10 C

0.05

PIN 5

(EXPOSED PAD)

1234

TOP VIEW

SIDE VIEW

A0.10 B

BOTTOM VIEW

DETAIL A

e/2 e

0.475

2 X

SOLDERING FOOTPRINT*

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

DETAIL A

RECOMMENDED

4.5600.495

1.530

4 X

3.200

SEATING

PLANE

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

A1 0.00 −−−

D1 4.70 4.90 D2 3.80 4.00

E1 5.70 5.90 E2 3.45 3.65

L1 0.125 REF

MILLIMETERS

A 0.90 1.00 b 0.33 0.41

c 0.23 0.28 D 5.15

5.00 5.30

E 6.15

6.00 6.30

e 1.27 BSC

G 0.51 0.575

K 1.20 1.35 L 0.51 0.575

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80 12

GENERIC

MARKING DIAGRAM*

XXXXXX

AYWZZ

XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some product may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

0.905

0.965

1.000

0.750

DIMENSIONS: MILLIMETERS

1.330

1.270 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON14036D DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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. ON Semiconductor reserves the right to make changes without further notice to any products herein.

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LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

TECHNICAL SUPPORT North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative

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ON Semiconductor NVMFS5H600NL User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual