ON Semiconductor NVMFS5C645N User Manual
NVMFS5C645N
Power MOSFET
60 V, 4.6 mW, 92 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• NVMFS5C645NWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
V
(BR)DSS
60 V
www.onsemi.com
R
MAX ID MAX
DS(ON)
4.6 mW @ 10 V
92 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1 & 2)
= 5 A)
L(pk)
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 65
TC = 25°C
TC = 100°C 40
TA = 25°C
TA = 100°C 14
TA = 25°C
TA = 100°C 1.8
= 10 ms
p
P
P
I
E
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
stg
60 V
±20 V
92
79
20
3.7
820 A
−55 to
+175
100 A
185 mJ
260 °C
A
W
A
W
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
1.9
41
°C/W
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX = 5C645N
XXXXXX = (NVMFS5C645N) or
XXXXXX = 645NWF
XXXXXX = (NVMFS5C645NWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
XXXXXX
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
April, 2019 − Rev. 0
1 Publication Order Number:
NVMFS5C645N/D
NVMFS5C645N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 48 V
DS
TJ = 25 °C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
60 V
22.4 mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
Drain−to−Source On Resistance R
V
GS(TH)
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 50 A 3.9 4.6
2.0 4.0 V
−7.3 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 10 V, VDS = 48 V; ID = 25 A 20.4
VGS = 10 V, VDS = 48 V; ID = 25 A
1500
1100
13
4.5
7.8
2.4
5.1 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 10 V, VDS = 48 V,
= 25 A, RG = 2.5 W
I
D
13.2
36.3
27
5.8
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 50 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 50 A
S
TJ = 25°C 0.88 1.2
TJ = 125°C 0.76
44
23
21
40 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS5C645N
TYPICAL CHARACTERISTICS
150
10 V to
4.5 V
125
100
75
50
, DRAIN CURRENT (A)
D
I
25
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
14
13
12
11
10
9
8
7
6
5
, DRAIN−TO−SOURCE RESISTANCE (mW)
4
DS(on)
R
Figure 3. On−Resistance vs. Gate−to−Source
2.0
VGS = 10 V
= 50 A
I
1.8
D
1.6
1.4
1.2
1.0
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.8
DS(on)
R
0.6
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
VGS = 6.0 V
5.0 V
4.5 V
3.02.52.01.51.00.50
TJ = 25°C
= 50 A
I
D
87654 40 45
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
109
150
VDS = 10 V
125
100
75
50
, DRAIN CURRENT (A)
D
I
25
0
45
40
TJ = 25°C
35
30
25
20
15
10
5
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
DS(on)
R
TJ = 25°C
TJ = 125°C
46
VGS = 4.5 V
3530 50252015105
Figure 4. On−Resistance vs. Drain Current and
Voltage
50
150
100,000
10,000
1000
, LEAKAGE (nA)
DSS
I
17512510075250−25−50
100
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Gate Voltage
TJ = 150°C
TJ = 125°C
TJ = 85°C
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
TJ = −55°C
53210
VGS = 10 V
55453525155
www.onsemi.com
3
Loading...