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MOSFET – Power, Single
N-Channel
40 V, 4.5 mW, 80 A
NVMFS5C456N
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
• NVMFS5C456NWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1 & 2)
= 5.22 A)
L(pk)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 56
TC = 25°C
TC = 100°C 27
TA = 25°C
TA = 100°C 14
TA = 25°C
TA = 100°C 1.8
= 10 ms
p
P
P
I
E
R
q
R
q
2
, 2 oz. Cu pad.
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
JC
JA
stg
40 V
±20 V
80
55
20
3.6
400 A
−55 to
+ 175
45.5 A
239 mJ
260 °C
2.7
42
A
W
A
W
°C
°C/W
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V
(BR)DSS
40 V
G (4)
R
MAX ID MAX
DS(ON)
4.5 mW @ 10 V
D (5,6)
S (1,2,3)
N−CHANNEL MOSFET
80 A
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX = 5C456N
XXXXXX = (NVMFS5C456N) or
XXXXXX = 456NWF
XXXXXX = (NVMFS5C456NWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
XXXXXX
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
October, 2019 − Rev. 1
1 Publication Order Number:
NVMFS5C456N/D
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NVMFS5C456N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Ty p Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 40 V
DS
TJ = 25 °C 10
TJ = 125°C 250
VDS = 0 V, VGS = 20 V 100 nA
40 V
23
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 250 mA
VGS = 10 V ID = 35 A 3.8 4.5 mV/°C
VDS =15 V, ID = 35 A 57 S
2.5 3.5 V
−6.5 mV/°C
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 10 V, VDS = 32 V; ID = 35 A
1150
600
25
18
3.7
5.7
3.0
4.5 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 10 V, VDS = 32 V,
= 35 A, RG = 1 W
I
D
12
80
26
ns
8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 35 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 35 A
S
TJ = 25°C 0.82 1.2
TJ = 125°C 0.69
33
16
17
18 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVMFS5C456N
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
60
, DRAIN CURRENT (A)
D
I
40
20
0
0123
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
10 V to 8 V
4.0 V
7.0 V
6.0 V
5.6 V
5.2 V
4.8 V
4.4 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
20
18
TJ = 25°C
16
14
12
10
8
6
4
2
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
2.5 3.5 4.5 5.5 6.5 7.5 9.5
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
8.5
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
120
VDS = 3 V
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
0
3.0 3.5 4.0 5.0 5.5
6
VGS = 10 V
5
4
3
2
1
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
10 20 40 50 100
DS(on)
R
TJ = 25°C
TJ = 125°C
30
TJ = −55°C
4.5
60 80 9070
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
6.0
1.9
VGS = 10 V
= 35 A
I
D
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
1.7
1.5
1.3
1.1
0.9
0.7
Figure 5. On−Resistance Variation with
Temperature
100K
10K
1K
, LEAKAGE (nA)
DSS
I
100
10
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3
TJ = 150°C
TJ = 125°C
TJ = 85°C
5152535
10 20 30 40
Figure 6. Drain−to−Source Leakage Current
vs. Voltage