Page 1
MOSFET – Power, Single
N-Channel
40 V, 1.1 mW, 268 A
NVMFS5C420N
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
• Low Q
• NVMFS5C420NWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
to Minimize Conduction Losses
DS(on)
and Capacitance to Minimize Driver Losses
G
V
(BR)DSS
40 V
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R
MAX ID MAX
DS(ON)
1.1 mW @ 10 V
268 A
MAXIMUM RATINGS (T
Parameter
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain
Current R
(Notes 1, 3)
Power Dissipation
R
q
JC
Continuous Drain
Current R
(Notes 1, 2, 3)
Power Dissipation
R
q
JA
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
q
JC
(Note 1)
q
JA
(Notes 1, 2)
= 24 A)
L(pk)
= 25°C unless otherwise noted)
J
Symbol Value Unit
TC = 25°C
Steady
State
Steady
State
TA = 25°C, t
TC = 100°C 190
TC = 25°C
TC = 100°C 75
TA = 25°C
TA = 100°C 30
TA = 25°C
TA = 100°C 1.9
= 10 ms
p
P
P
I
TJ, T
E
DSS
GS
I
D
D
I
D
D
DM
S
AS
T
L
stg
40 V
±20 V
268
150
43
3.8
900 A
−55 to
+175
125 A
1541 mJ
260 °C
A
W
A
W
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
1.0
39
°C/W
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX = 5C420N
XXXXXX = (NVMFS5C420N) or
XXXXXX = 420NWF
XXXXXX = (NVMFS5C420NWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
D
D
XXXXXX
AYWZZ
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
September, 2020 − Rev. 0
1 Publication Order Number:
NVMFS5C420N/D
Page 2
NVMFS5C420N
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
(BR)DSS
T
J
DSS
GSS
VGS = 0 V, ID = 250 mA
/
VGS = 0 V,
V
= 40 V
DS
TJ = 25 °C 10
TJ = 125°C 100
VDS = 0 V, VGS = 20 V 100 nA
40 V
20
mV/°C
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient V
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
VGS = VDS, ID = 200 mA
VGS = 10 V ID = 50 A 0.9 1.1
VDS = 5 V, ID = 50 A 161 S
2.0 4.0 V
−7.7 mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1 MHz, VDS = 20 V
VGS = 10 V, VDS = 32 V; ID = 50 A 82
VGS = 10 V, VDS = 32 V; ID = 50 A
5340
3500
140
5.3
21
23
4.7 V
pF
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
Rise Time t
Turn−Off Delay Time t
d(OFF)
Fall Time t
r
f
VGS = 10 V, VDS = 32 V,
= 50 A, RG = 2.5 W
I
D
22
19
54
20
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= 50 A
S
VGS = 0 V, dIS/dt = 100 A/ms,
I
= 50 A
S
TJ = 25°C 0.8 1.2
TJ = 125°C 0.65
113
52
61
236 nC
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
Page 3
NVMFS5C420N
TYPICAL CHARACTERISTICS
500
450
400
350
300
250
200
150
, DRAIN CURRENT (A)
D
I
100
50
0
0123
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
6.0 V
VGS = 10 V to 8.0 V
5.2 V
4.8 V
4.4 V
4.0 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
8
7
6
5
4
TJ = 25°C
= 50 A
I
D
500
450
400
350
300
250
200
150
, DRAIN CURRENT (A)
D
I
100
50
0
012345
4.0
TJ = 25°C
3.5
3.0
2.5
2.0
TJ = 25°C
TJ = 125°C
TJ = −55°C
6
3
2
1
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
56 7 8 910
DS(on)
R
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS = 10 V
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
DS(on)
R
2.0
1.5
1.0
0.5
= 50 A
I
D
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
1.5
1.0
0.5
, DRAIN−TO−SOURCE RESISTANCE (mW)
0
20 60 140 300
DS(on)
R
100
VGS = 10 V
180 220 260
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1M
TJ = 175°C
100K
10K
1K
, LEAKAGE (nA)
100
DSS
I
10
1
5152535
10 20 30 40
TJ = 125°C
TJ = 85°C
TJ = 25°C
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
Page 4
NVMFS5C420N
TYPICAL CHARACTERISTICS
10K
C
ISS
C
1K
100
10
C, CAPACITANCE (pF)
VGS = 0 V
= 25°C
T
J
f = 1 MHz
1
0 10203040
5152535 1030
OSS
C
RSS
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
t
d(off)
t
f
t
t
d(on)
r
100
10
9
8
7
6
Q
GS
Q
GD
5
4
3
2
, GATE−TO−SOURCE VOLTAGE (V)
1
GS
0
V
020 7090
5040 60 80
VDS = 32 V
= 50 A
I
D
T
= 25°C
J
100
VGS = 0 V
10
t, TIME (ns)
10
VGS = 10 V
V
DS
I
= 50 A
1
1 10 100
D
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10
TC = 25°C
≤ 10 V
V
GS
D
Single Pulse
1
, DRAIN CURRENT (A)
I
R
DS(on)
Limit
10 ms
0.5 ms
1 ms
10 ms
Thermal Limit
0.1
Package Limit
1 10 10000.1
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
= 32 V
1
TJ = 125°C
, SOURCE CURRENT (A)
S
I
0.1
TJ = 25°C
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
TJ = −55°C
Figure 10. Diode Forward Voltage vs. Current
1000
T
= 25°C
J(initial)
100
, (A)
T
PEAK
I
10
1
0.00001 0.001 0.01
Figure 12. I
J(initial)
= 100°C
0.0001
PEAK
vs. Time in Avalanche
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4
Page 5
NVMFS5C420N
†
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10
10%
5%
2%
1
R(t) (°C/W)
0.01
DEVICE ORDERING INFORMATION
NVMFS5C420NT1G 5C420N DFN5
NVMFS5C420NWFT1G 420NWF DFN5
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1%
0.1
Single Pulse
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
Device Marking Package Shipping
1500 / Tape & Reel
(Pb−Free)
1500 / Tape & Reel
(Pb−Free, Wettable Flanks)
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5
Page 6
NVMFS5C420N
PACKAGE DIMENSIONS
0.10 C
0.10 C
C
0.05 c
PIN 5
(EXPOSED PAD)
D
2
D1
1234
TOP VIEW
SIDE VIEW
8X
b
A0.10 B
L
14
E2
G
D2
BOTTOM VIEW
2 X
e/2
e
0.20
A
E1
E
2
A
DETAIL A
K
M
L1
DFN5 5x6, 1.27P
(SO−8FL)
C
CASE 488AA
ISSUE M
B
2 X
0.20 C
4 X
q
c
DETAIL A
A1
C
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
DIM MIN NOM
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15
D1 4.70 4.90
D2 3.80 4.00
E 6.15
E1 5.70 5.90
E2 3.45 3.65
e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575
L1 0.125 REF
M 3.00 3.40
q 0 −−−
STYLE 1:
PIN 1. SOURCE
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.495
2X
0.905
0.965
4X
1.000
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
2X
1.530
1
4.560
3.200
4.530
1.330
1.270
PITCH
DIMENSIONS: MILLIMETERS
MILLIMETERS
5.00 5.30
6.00 6.30
_
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
3.80
12
_
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