ON Semiconductor NVMFS5C420N User Manual

MOSFET – Power, Single

N-Channel

40 V, 1.1 mW, 268 A

NVMFS5C420N

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• NVMFS5C420NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

V

(BR)DSS

40 V

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R

MAX ID MAX

DS(ON)

1.1 mW @ 10 V

268 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current R
(Notes 1, 3)

Power Dissipation
R

q

JC

Continuous Drain
Current R
(Notes 1, 2, 3)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature
Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

q

JC

(Note 1)

q

JA

(Notes 1, 2)

= 24 A)

L(pk)

= 25°C unless otherwise noted)

J

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 190

TC = 25°C

TC = 100°C 75

TA = 25°C

TA = 100°C 30

TA = 25°C

TA = 100°C 1.9

= 10 ms

p

P

P

I

TJ, T

E

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

stg

40 V

±20 V

268

150

43

3.8

900 A

−55 to
+175

125 A

1541 mJ

260 °C

A

W

A

W

°C

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

R

q

JC

R

q

JA

2

, 2 oz. Cu pad.

1.0

39

°C/W

D (5,6)

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX = 5C420N

XXXXXX = (NVMFS5C420N) or
XXXXXX = 420NWF
XXXXXX = (NVMFS5C420NWF)

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

D

XXXXXX

AYWZZ

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2019

September, 2020 − Rev. 0

1 Publication Order Number:

NVMFS5C420N/D

NVMFS5C420N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 40 V

DS

TJ = 25 °C 10

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

40 V

20

mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient V

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

VGS = VDS, ID = 200 mA

VGS = 10 V ID = 50 A 0.9 1.1

VDS = 5 V, ID = 50 A 161 S

2.0 4.0 V

−7.7 mV/°C

mW

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

GP

VGS = 0 V, f = 1 MHz, VDS = 20 V

VGS = 10 V, VDS = 32 V; ID = 50 A 82

VGS = 10 V, VDS = 32 V; ID = 50 A

5340

3500

140

5.3

21

23

4.7 V

pF

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 10 V, VDS = 32 V,

= 50 A, RG = 2.5 W

I

D

22

19

54

20

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 50 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 50 A

S

TJ = 25°C 0.8 1.2

TJ = 125°C 0.65

113

52

61

236 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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