ON Semiconductor NVMFS5C406N User Manual

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Page 1

MOSFET - Power, Single

N-Channel

40 V, 0.8 mW, 353 A

NVMFS5C406N

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• NVMFS5C406NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

(BR)DSS

40 V

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MAX ID MAX

DS(ON)

0.8 mW @ 10 V

353 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R (Notes 1, 3)

Power Dissipation R

Continuous Drain Current R (Notes 1, 2, 3)

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature Range

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

(Note 1)

(Notes 1, 2)

= 32.5 A)

L(pk)

= 25°C unless otherwise noted)

Symbol Value Unit

TC = 25°C

Steady

State

Steady

State

TA = 25°C, t

TC = 100°C 249

TC = 25°C

TC = 100°C 90

TA = 25°C

TA = 100°C 37

TA = 25°C

TA = 100°C 1.9

= 10 ms

TJ, T

DSS

stg

40 V

±20 V

353

179

3.9

900 A

−55 to +175

149 A

439 mJ

260 °C

°C

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

, 2 oz. Cu pad.

0.84

38.7

°C/W

D (5,6)

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING DIAGRAM

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX = 5C406N

XXXXXX = (NVMFS5C406N) or XXXXXX = 406NWF XXXXXX = (NVMFS5C406NWF)

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

S S S

XXXXXX

AYWZZ

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

January, 2021 − Rev. 2

1 Publication Order Number:

NVMFS5C406N/D

Page 2

NVMFS5C406N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

= 40 V

TJ = 25 °C 10

TJ = 125°C 250

VDS = 0 V, VGS = 20 V 100 nA

40 V

16.7

mV/°C

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Threshold Temperature Coefficient V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

VGS = VDS, ID = 280 mA

VGS = 10 V ID = 50 A 0.64 0.8

VDS =15 V, ID = 50 A 190 S

2.0 4.0 V

−8.0 mV/°C

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz, VDS = 20 V

VGS = 10 V, VDS = 20 V; ID = 50 A 110

VGS = 10 V, VDS = 20 V; ID = 50 A

7288

4530

150

4.7 V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

VGS = 10 V, VDS = 32 V,

= 50 A, RG = 2.5 W

116

133

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V,

= 50 A

VGS = 0 V, dIS/dt = 100 A/ms,

= 50 A

TJ = 25°C 0.78 1.2

TJ = 125°C 0.64

120 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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NVMFS5C406N

TYPICAL CHARACTERISTICS

500

450

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS = 7 V to 10 V

2.0 2.5

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

8 7

6 5

4 3

2 1

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.0 VGS = 10 V

1.8

= 50 A

1.6

1.4

1.2

1.0

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

0.8

DS(on)

0.6

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

50 175

Figure 5. On−Resistance Variation with

Temperature

5.0 V

TJ = 25°C

= 50 A

15012510075250−25−50

500

450

400

350

300

250

200

150

, DRAIN CURRENT (A)

100

3.01.51.00.50

109876543

1.0

0.9

0.8

0.7

0.6

0.5

, DRAIN−TO−SOURCE RESISTANCE (mW)

0.4

DS(on)

100000

10000

1000

100

, LEAKAGE (nA)

DSS

VDS = 10 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

5.04.03.0

VGS = 10 V

155 305

6.02.0 5.54.53.52.5

TJ = 25°C

255205105555

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ = 150°C

TJ = 125°C

TJ = 85°C

TJ = 25°C

10 20

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

6.0

40353025155

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Page 4

NVMFS5C406N

TYPICAL CHARACTERISTICS

1E+5

1E+4

1E+3

1E+2

C, CAPACITANCE (pF)

VGS = 0 V T f = 1 MHz

1E+1

1000

100

ISS

OSS

= 25°C

RSS

3525155

403020100

, GATE−TO−SOURCE VOLTAGE (V)

30 60

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

1000

VGS = 10 V

= 32 V

= 50 A

d(off)

d(on)

VGS = 0 V

100

VDS = 20 V

= 50 A

= 25°C

9070504020100

t, TIME (ns)

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

1000

100

VGS ≤ 10 V Single Pulse TC = 25°C

, DRAIN CURRENT (A)

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)

Figure 11. Maximum Rated Forward Biased

vs. Gate Resistance

Limit

DS(on)

Thermal Limit Package Limit

Safe Operating Area

10 ms

0.5 ms 1 ms 10 ms

100

, SOURCE CURRENT (A)

0.1

100101

TJ = 125°C

TJ = 25°C TJ = −55°C

, SOURCE−TO−DRAIN VOLTAGE (V)

0.90.8 1.00.70.60.50.40.3

Figure 10. Diode Forward Voltage vs. Current

1000

= 25°C

100

DRAIN CURRENT (A)

PEAK

10001010.1

0.00001 0.01

Figure 12. I

J(initial)

0.0001

PEAK

= 100°C

J(initial)

0.001

vs. Time in Avalanche

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Page 5

100

(t) (°C/W)

0.1

NVMFS5C406N

TYPICAL CHARACTERISTICS

50% Duty Cycle

20% 10%

2% 1%

0.01

Single Pulse

1E−021E−03 1E+001E−04 1E−011E−05 1E+011E−06

PULSE TIME (sec)

1E+02 1E+03

Figure 13. Thermal Characteristics

DEVICE ORDERING INFORMATION

Device Marking Package Shipping

NVMFS5C406NT1G 5C406N DFN5

(Pb−Free)

NVMFS5C406NWFT1G 406NWF DFN5

(Pb−Free, Wettable Flanks)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

1500 / Tape & Reel

†

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Page 6

DFN5 5x6, 1.27P

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

2 X

0.20 C

0.10 C

0.05

PIN 5

(EXPOSED PAD)

1234

TOP VIEW

SIDE VIEW

A0.10 B

BOTTOM VIEW

DETAIL A

e/2 e

0.475

2 X

SOLDERING FOOTPRINT*

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

DETAIL A

RECOMMENDED

4.5600.495

1.530

4 X

3.200

SEATING

PLANE

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

MILLIMETERS

A 0.90 1.00

A1 0.00 −−−

b 0.33 0.41 c 0.23 0.28

D 5.15

5.00 5.30

D1 4.70 4.90 D2 3.80 4.00

E 6.15

6.00 6.30

E1 5.70 5.90 E2 3.45 3.65

e 1.27 BSC G 0.51 0.575 K 1.20 1.35

L 0.51 0.575

L1 0.125 REF

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80 12

GENERIC

MARKING DIAGRAM*

XXXXXX

AYWZZ

XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some product may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

0.905

0.965

1.000

0.750

DIMENSIONS: MILLIMETERS

1.330

1.270 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON14036D DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

. ON Semiconductor reserves the right to make changes without further notice to any products herein.

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LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

TECHNICAL SUPPORT North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative

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ON Semiconductor NVMFS5C406N User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual