ON Semiconductor NVMFS5A160PLZ User Manual

NVMFS5A160PLZ

MOSFET – Power, Single

P-Channel

-60 V, -100 A, 7.7 mW

Features

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• Small Footprint (5 x 6 mm) for Compact Design

• Low R

• NVMFS5A160PLZWF: Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

SPECIFICATION MAXIMUM RATINGS (T

noted) (Notes 1, 2, 3)

Symbol Parameter Value Unit

V

DSS

V

GS

I

D

P

D

I

D

P

D

I

DP

TJ, T

STG

I

S

E

AS

T

L

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R

q

JC

R

q

JA

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.

2. Surface mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

to Minimize Conduction Losses

DS(on)

V

DSS

−60 V

= 25°C unless otherwise

J

G(4)

Drain to Source Voltage −60 V

Gate to Source Voltage ±20 V

Continuous Drain,
Current R
(Notes 1, 3)

Power Dissipation
R

q

JC

q

(Note 1)

JC

,

Steady

T

= 25°C −100 A

C

State

T

= 25°C 200 W

C

Continuous Drain:
Current R
(Notes 1, 2, 3)

Power Dissipation
R

Pulsed Drain
Current

(Note 1, 2)

q

JA

q

JA

Steady
State

PW ≤ 10 ms,
duty cycle ≤ 1%

Operating Junction and Storage Temperature −55 to

Source Current (Body Diode) −100 A

Single Pulse Drain to Source Avalanche En­ergy (L= 1.0 mH, I

L(pk)

= −26 A)

Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)

T

= 25°C −15 A

A

T

= 25°C 3.8 W

A

−400 A

+175

335 mJ

260

°C

°C

XXXXXX = Specific Device Code

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of
this data sheet.

Junction to Case Steady State 0.75

Junction to Ambient Steady State (Note 3) 39

2

, 2 oz. Cu pad.

R

MAX ID MAX

DS(ON)

7.7 mW @ −10 V

−100 A

10.5 mW @ −4.5 V

D(5)

1:Source
2:Source
3:Source
4:Gate
5:Drain

S (1,2,3)

P-CHANNEL MOSFET

DFN5

(SO−8FL)

MARKING DIAGRAM

D
S
S

XXXXXX

S

AYW ZZ

G

D

5A160L(NVMFS5A160PLZ)
160LWF(NVMFS5A160PLZWF)

D

D

°C/W

© Semiconductor Components Industries, LLC, 2017

July, 2019 − Rev. 0

1 Publication Order Number:

NVMFS5A160PLZ/D

NVMFS5A160PLZ

ELECTRICAL CHARACTERISTICS (T

Symbol

Parameter Test Condition Min Typ Max Unit

= 25°C unless otherwise noted)

J

OFF CHARACTERISTICS

V

(BR)DSS

I

DSS

I

GSS

Drain to Source Breakdown Volt­age

Zero Gate Voltage Drain Current VDS = −60 V, V

Gate to Source Leakage Current VGS = ±16 V, V

ID = −1 mA, VGS = 0 V −60

= 0 V

GS

= 0 V ±10

DS

TJ = 25°C −1.0

T

= 100°C

J

(Note 4)

−100

V

mA

mA

mA

ON CHARACTERISTICS (Note 5)

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VDS = −10 V, ID = −1mA −1.2 −2.6 V

Drain to Source On Resistance

VGS = −10 V ID = −50 A 5.8 7.7

VGS = −4.5 V ID = −50 A 7.3 10.5

mW

Forward Transconductance VDS = −10 V, ID = −50 A 119 S

CHARGES, CAPACITANCES & GATE RESISTANCE

V

= 0 V, f = 1 MHz

GS

= −20 V,

V

DS

V

= −10 V, I

GS

V

= −36 V,

DS

= −50 A

D

7700

pF

160

nC

Q

C

C

C

g(tot)

Q

Q

iss

oss

rss

gs

gd

Input Capacitance

Output Capacitance 720

Reverse Transfer Capacitance 540

Total Gate Charge

Gate to Source Charge 24

Gate to Drain Charge 45

SWITCHING CHARACTERISTICS (Note 6)

t

d(on)

t

d(off)

Turn-On Delay Time

t

Rise Time 690

r

Turn-Off Delay Time 645

t

Fall Time 643

f

VDS = −36 V, ID = −50 A,
V

= −10 V,

GS

= 50 W

R

G

50

ns

DRAIN-SOURCE DIODE CHARACTERISTICS

V

SD

t

Q

Forward Diode Voltage V

Reverse Recovery Time

rr

Reverse Recovery Charge 218 nC

rr

GS

V

GS

di/dt = 100 A/ms

= 0 V, I

= 0 V, I

= −50 A −0.83 −1.5 V

S

= −50 A

S

93 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. The maximum value is specified by design at T

5. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.

= 100 °C. Product is not tested to this condition in production.

J

6. Switching characteristics are independent of operating junction temperatures.

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NVMFS5A160PLZ

TYPICAL CHARACTERISTICS

Figure 1. ID − V

Figure 3. R

DS(on)

DS

− V

GS

Figure 2. ID − V

Figure 4. R

DS(on)

GS

− T

J

Figure 5. IS − V

SD

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3

Figure 6. SW Time − I

D

NVMFS5A160PLZ

TYPICAL CHARACTERISTICS

Figure 7. Ciss, Coss, Crss − V

Figure 9. SOA Figure 10. I

DS

Figure 8. VGS − Qg

− T

PEAK

AV

Figure 11. PD − T

C

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4

NVMFS5A160PLZ

TYPICAL CHARACTERISTICS

Figure 12. R

− Pulse Time

q

JA

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5

NVMFS5A160PLZ

ORDERING INFORMATION

Device Marking Package Shipping (Qty / Packing)

NVMFS5A160PLZT1G 5A160L DFN5 5x6, 1.27P (SO−8FL)

NVMFS5A160PLZWFT1G

NVMFS5A160PLZT3G

NVMFS5A160PLZWFT3G

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

160LWF DFN5 5x6, 1.27P (SO−8FL)

(Pb-Free, Wettable Flanks)

5A160L DFN5 5x6, 1.27P (SO−8FL)

160LWF DFN5 5x6, 1.27P (SO−8FL)

(Pb-Free, Wettable Flanks)

(Pb-Free)

(Pb-Free)

1.500 / Tape & Reel

1.500 / Tape & Reel

5.000 / Tape & Reel

5.000 / Tape & Reel

†

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6

DFN5 5x6, 1.27P

8

s

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

1

SCALE 2:1

2 X

0.20 C

0.10 C

0.10 C

C

0.05

c

PIN 5

(EXPOSED PAD)

D

2

D1

1234

TOP VIEW

SIDE VIEW

8X

b

A0.10 B

L

14

E2

G

D2

BOTTOM VIEW

A

B

E1

E

2

A

DETAIL A

e/2

e

K

M

L1

0.475

2 X

2X

2X

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

4 X

q

c

DETAIL A

RECOMMENDED

SOLDERING FOOTPRINT*

4.5600.495

2X

1.530

A1

C

SEATING

PLANE

3.200

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.

DIM MIN NOM

MILLIMETERS

A 0.90 1.00

A1 0.00 −−−

b 0.33 0.41

c 0.23 0.28

D 5.15

5.00 5.30

D1 4.70 4.90
D2 3.80 4.00

E 6.15

6.00 6.30

E1 5.70 5.90
E2 3.45 3.65

e 1.27 BSC
G 0.51 0.575
K 1.20 1.35
L 0.51 0.575

L1 0.125 REF

M 3.00 3.40

q 0 −−−

_

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80
12

_

GENERIC

MARKING DIAGRAM*

1

XXXXXX

AYWZZ

XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

2X

0.905

0.965

1.000

4X

4X

0.750

1

DIMENSIONS: MILLIMETERS

1.330

1.270
PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2018

98AON14036D
DFN5 5x6, 1.27P (SO−8FL)

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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