ON Semiconductor NVMFS5885NL User Manual

NVMFS5885NL

MOSFET – Power, Single

N-Channel

60 V, 15 mW, 39 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVMFS5885NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Cur­rent R
2, 3)

Power Dissipation
R

Y

J−mb

Continuous Drain Cur­rent R

3)

Power Dissipation
R

q

JA

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (T
I

L(pk)

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

(Notes 1,

Y

J−mb

(Notes 1, 2, 3)

(Notes 1 &

q

JA

(Notes 1 & 3)

= 25°C, VDD = 50 V, VGS = 10 V,

J

= 18 A, L = 0.3 mH, RG = 25 W)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Mounting Board (top) − Steady

State (Notes 2, 3)

Junction−to−Ambient − Steady State (Note 3)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm

= 25°C unless otherwise noted)

J

Symbol Value Unit

Tmb = 25°C

Steady

State

Steady

State

TA = 25°C, t

Tmb = 100°C 28

Tmb = 25°C

Tmb = 100°C 27

TA = 25°C

TA = 100°C 7.2

TA = 25°C

TA = 100°C 1.8

= 10 ms

p

P

P

I

E

R

Y

R

q

2

, 2 oz. Cu pad.

DSS

GS

I

D

D

I

D

D

DM

S

AS

T

L

J−mb

JA

stg

60 V

"20 V

39

54

10.2

3.7

179 A

−55 to
175

46 A

49 mJ

260 °C

2.8

41

A

W

A

W

°C

°C/W

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V

(BR)DSS

60 V

G (4)

R

MAX ID MAX

DS(ON)

15 mW @ 10 V

21 mW @ 4.5 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

39 A

MARKING
DIAGRAM

1

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

S
S
S

G

D

D

XXXXXX

AYWZZ

D

D

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2013

July, 2019 − Rev. 3

1 Publication Order Number:

NVMFS5885NL/D

NVMFS5885NL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

V

= 60 V

DS

VDS = 0 V, VGS = ± 20 V ±100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Drain−to−Source On Resistance R

V

GS(TH)

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 15 A 11.6 15 mW

VGS = 4.5 V, ID = 15 A 15.2 21

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

iss

oss

rss

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1 MHz,

V

= 25 V

DS

VGS = 4.5 V, VDS = 48 V, ID = 15 A

VGS = 10 V, VDS = 48 V, ID = 15 A 21 nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

VGS = 4.5 V, VDS = 48 V,

= 15 A, RG = 2.5 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

IS = 15 A

VGS = 0 V, dIs/dt = 100 A/ms,

I

= 15 A

S

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperatures.

60 V

TJ = 25°C 1.0 mA

TJ = 125°C 10

1.5 2.5 V

1340

125

85

12

1.1

4.0

6.3

10

64

18

52

TJ = 25°C 0.8 1.2

TJ = 125°C 0.7

20

15

5.0

16 nC

pF

nC

ns

V

ns

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NVMFS5885NL

TYPICAL CHARACTERISTICS

80

TJ = 25°C

70

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

10 V

0

012345

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

6.5 V

4.5 V

4.0 V

3.6 V

VGS = 3.2 V

Figure 1. On−Region Characteristics

0.030

ID = 15 A

= 25°C

T

0.025

0.020

0.015

J

80

VDS ≥ 10 V

70

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

2345

TJ = 25°C

TJ = 125°C

TJ = −55°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.020
TJ = 25°C

0.018

0.016

0.014

0.012

VGS = 4.5 V

VGS = 10 V

0.010

, DRAIN−TO−SOURCE RESISTANCE (W)

0.005
2345678910

DS(on)

R

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.6
VGS = 15 V

= 4.5 A

I

D

2.2

1.8

1.4

1.0

0.6

50 25 0 25 50 75 100 125 150 175

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

R

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.010

, DRAIN−TO−SOURCE RESISTANCE (W)

0.008
5 10152025303540

DS(on)

R

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

TJ = 150°C

1000

, LEAKAGE (nA)

DSS

I

100

10 20 30 40 50 60

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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