ON Semiconductor NVMFS5885NL User Manual

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Page 1

NVMFS5885NL

MOSFET – Power, Single

N-Channel

60 V, 15 mW, 39 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVMFS5885NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R 2, 3)

Power Dissipation R

J−mb

Continuous Drain Current R

Power Dissipation R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (T I

L(pk)

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

(Notes 1,

J−mb

(Notes 1, 2, 3)

(Notes 1 &

(Notes 1 & 3)

= 25°C, VDD = 50 V, VGS = 10 V,

= 18 A, L = 0.3 mH, RG = 25 W)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Mounting Board (top) − Steady

State (Notes 2, 3)

Junction−to−Ambient − Steady State (Note 3)

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm

= 25°C unless otherwise noted)

Symbol Value Unit

Tmb = 25°C

Steady

State

Steady

State

TA = 25°C, t

Tmb = 100°C 28

Tmb = 25°C

Tmb = 100°C 27

TA = 25°C

TA = 100°C 7.2

TA = 25°C

TA = 100°C 1.8

= 10 ms

, 2 oz. Cu pad.

DSS

J−mb

stg

60 V

"20 V

10.2

3.7

179 A

−55 to 175

46 A

49 mJ

260 °C

2.8

°C

°C/W

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(BR)DSS

60 V

G (4)

MAX ID MAX

DS(ON)

15 mW @ 10 V

21 mW @ 4.5 V

D (5,6)

S (1,2,3)

N−CHANNEL MOSFET

39 A

MARKING DIAGRAM

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

S S S

XXXXXX

AYWZZ

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

July, 2019 − Rev. 3

1 Publication Order Number:

NVMFS5885NL/D

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NVMFS5885NL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

= 60 V

VDS = 0 V, VGS = ± 20 V ±100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Drain−to−Source On Resistance R

GS(TH)

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 15 A 11.6 15 mW

VGS = 4.5 V, ID = 15 A 15.2 21

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

iss

oss

rss

G(TOT)

G(TH)

G(TOT)

VGS = 0 V, f = 1 MHz,

= 25 V

VGS = 4.5 V, VDS = 48 V, ID = 15 A

VGS = 10 V, VDS = 48 V, ID = 15 A 21 nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 4.5 V, VDS = 48 V,

= 15 A, RG = 2.5 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V,

IS = 15 A

VGS = 0 V, dIs/dt = 100 A/ms,

= 15 A

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperatures.

60 V

TJ = 25°C 1.0 mA

TJ = 125°C 10

1.5 2.5 V

1340

125

1.1

4.0

6.3

TJ = 25°C 0.8 1.2

TJ = 125°C 0.7

5.0

16 nC

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NVMFS5885NL

TYPICAL CHARACTERISTICS

TJ = 25°C

, DRAIN CURRENT (A)

10 V

012345

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

6.5 V

4.5 V

4.0 V

3.6 V

VGS = 3.2 V

Figure 1. On−Region Characteristics

0.030

ID = 15 A

= 25°C

0.025

0.020

0.015

VDS ≥ 10 V

, DRAIN CURRENT (A)

2345

TJ = 25°C

TJ = 125°C

TJ = −55°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.020 TJ = 25°C

0.018

0.016

0.014

0.012

VGS = 4.5 V

VGS = 10 V

0.010

, DRAIN−TO−SOURCE RESISTANCE (W)

0.005 2345678910

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.6 VGS = 15 V

= 4.5 A

2.2

1.8

1.4

1.0

0.6

50 25 0 25 50 75 100 125 150 175

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.010

, DRAIN−TO−SOURCE RESISTANCE (W)

0.008 5 10152025303540

DS(on)

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

TJ = 150°C

1000

, LEAKAGE (nA)

DSS

100

10 20 30 40 50 60

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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NVMFS5885NL

TYPICAL CHARACTERISTICS

1600

1400

iss

VGS = 0 V TJ = 25°C

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

oss

rss

0 102030405060

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

100

t, TIME (ns)

d(off)

d(on)

VDD = 48 V

= 4.5 V

= 15 A

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

, GATE−TO−SOURCE VOLTAGE (V)

0246810121416182022

VDS = 48 A

= 15 A

= 25°C

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage vs. Total

Charge

VGS = 0 V

= 25°C

, SOURCE CURRENT (A)

0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

1000

100

VGS = 10 V Single Pulse TC = 25°C

10 ms

100 ms

1 ms

10 ms

, DRAIN CURRENT (A)

0.1

Limit

DS(on)

Thermal Limit Package Limit

0.01

0.1 1 10 100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

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Page 5

NVMFS5885NL

TYPICAL CHARACTERISTICS

100

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

JA(t)

0.01

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

DEVICE ORDERING INFORMATION

NVMFS5885NLT1G V5885L DFN5

NVMFS5885NLWFT1G 5885LW DFN5

NVMFS5885NLT3G V5885L DFN5

NVMFS5885NLWFT3G 5885LW DFN5

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Single Pulse

PULSE TIME (sec)

Figure 12. Thermal Response

Device Marking Package Shipping

1500 / Tape & Reel

(Pb−Free)

1500 / Tape & Reel

(Pb−Free)

5000 / Tape & Reel

(Pb−Free)

5000 / Tape & Reel

(Pb−Free)

†

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Page 6

DFN5 5x6, 1.27P

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

2 X

0.20 C

0.10 C

0.05

PIN 5

(EXPOSED PAD)

1234

TOP VIEW

SIDE VIEW

A0.10 B

BOTTOM VIEW

DETAIL A

e/2

0.475

2 X

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

4 X

DETAIL A

RECOMMENDED

SOLDERING FOOTPRINT*

4.5600.495

1.530

SEATING

PLANE

3.200

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

MILLIMETERS

A 0.90 1.00

A1 0.00 −−−

b 0.33 0.41 c 0.23 0.28

D 5.15

5.00 5.30

D1 4.70 4.90 D2 3.80 4.00

E 6.15

6.00 6.30

E1 5.70 5.90 E2 3.45 3.65

e 1.27 BSC G 0.51 0.575 K 1.20 1.35

L 0.51 0.575

L1 0.125 REF

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80 12

GENERIC

MARKING DIAGRAM*

XXXXXX

AYWZZ

XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some product may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

0.905

0.965

1.000

0.750

DIMENSIONS: MILLIMETERS

1.330

1.270 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON14036D DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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Europe, Middle East and Africa Technical Support:

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ON Semiconductor NVMFS5885NL User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual