ON Semiconductor NTMFS5844NL, NVMFS5844NL User Manual

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Page 1

NTMFS5844NL, NVMFS5844NL

MOSFET – Power, Single,

N-Channel

60 V, 61 A, 12 mW

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

• NVMFS5844NLWF − Wettable Flanks Product

• NVMFS Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R 2, 3, 4)

Power Dissipation R

J−mb

Continuous Drain Current R

Power Dissipation R

Pulsed Drain Current

Current Limited by Package (Note 4)

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (T I

L(pk)

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

(Notes 1,

J−mb

(Notes 1, 2, 3)

(Notes 1, 3,

(Notes 1 & 3)

= 25°C, VDD = 50 V, VGS = 10 V,

= 31 A, L = 0.1 mH, RG = 25 W)

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Mounting Board (top) − Steady

State (Notes 2, 3)

Junction−to−Ambient − Steady State (Note 3)

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface.

= 25°C unless otherwise noted)

Symbol Value Unit

Tmb = 25°C

Steady

State

Steady

State

TA = 25°C, t

Tmb = 100°C 43

Tmb = 25°C

Tmb = 100°C 54

TA = 25°C

TA = 100°C 8.0

TA = 25°C

TA = 100°C 1.8

= 10 ms

TA = 25°C I

DmaxPkg

DSS

J−mb

stg

60 V

"20 V

107

11.2

3.7

247 A

80 A

−55 to 175

60 A

48 mJ

260 °C

1.4

°C

°C/W

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(BR)DSS

60 V

G (4)

MAX ID MAX

DS(ON)

12 mW @ 10 V

16 mW @ 4.5 V

D (5)

S (1,2,3)

N−CHANNEL MOSFET

61 A

MARKING DIAGRAM

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

S S S G

XXXXXX

AYWZZ

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

May, 2019 − Rev. 5

1 Publication Order Number:

NTMFS5844NL/D

Page 2

NTMFS5844NL, NVMFS5844NL

3. Surface−mounted on FR4 board using a 650 mm

, 2 oz. Cu pad.

4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = 250 mA

VGS = 0 V,

= 60 V

VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 10 A 10.2 12

VGS = 4.5 V ID = 10 A 13 16

Forward Transconductance g

VDS = 5 V, ID = 10 A 27 S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

Gate Resistance R

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz, VDS = 25 V

VGS = 10 V, VDS = 48 V; ID = 10 A 30

VGS = 4.5 V, VDS = 48 V; ID = 10 A

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 4.5 V, VDS = 48 V,

= 10 A, RG = 2.5 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V,

= 10 A

VGS = 0 V, dIS/dt = 100 A/ms,

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

= 10 A

60 V

TJ = 25 °C 1

TJ = 125°C 100

1.5 2.3 V

6.2 mV/°C

1460

150

1.0

4.0

8.0

3.0 V

0.62

TJ = 25°C 0.79 1.2

TJ = 125°C 0.65

6.0

15 nC

mV/°C

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NTMFS5844NL, NVMFS5844NL

TYPICAL CHARACTERISTICS

10 V

, DRAIN CURRENT (A)

012345

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 5 V

4.0 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

TJ = 25°C

Figure 1. On−Region Characteristics

0.030

ID = 10 A

= 25°C

0.025

0.020

0.015

0.010

VDS ≥ 10 V

, DRAIN CURRENT (A)

12345

TJ = 25°C

TJ = 125°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = −55°C

Figure 2. Transfer Characteristics

0.016

TJ = 25°C

0.014

0.012

0.010

VGS = 4.5 V

VGS = 10 V

, DRAIN−TO−SOURCE RESISTANCE (W)

0.005 24681012

DS(on)

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.5

VGS = 10 V

ID = 10 A

1.5

0.5

−50 −25 0 25 50 75 100 125 150

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

, DRAIN−TO−SOURCE RESISTANCE (W)

0.008

DS(on)

100,000

10,000

, LEAKAGE (nA)

1,000

DSS

175

100

5 10152025303540

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 125°C

10 20 30 40 50 6

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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NTMFS5844NL, NVMFS5844NL

TYPICAL CHARACTERISTICS

1800

1600

1400

iss

VGS = 0 V TJ = 25°C

1200

1000

800

600

C, CAPACITANCE (pF)

400

oss

200

rss

0 102030405060

DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000

VDD = 48 V

= 10 A

= 4.5 V

100

d(off)

d(on)

t, TIME (ns)

, GATE−TO−SOURCE VOLTAGE (V)

0 5 10 15 20 25 3

VDS = 48 V

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage vs. Total

Charge

VGS = 0 V

TJ = 25°C

, SOURCE CURRENT (A)

= 10 A = 25°C

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

1000

VGS = 10 V Single Pulse TC = 25°C

100

100 ms

, DRAIN CURRENT (A)

Limit

DS(on)

Thermal Limit

1 ms

Package Limit

0.1

0.1 1 10 100 VDS, DRAISN VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

0.5 0.6 0.7 0.8 0.9 1.0

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

, SINGLE PULSE DRAIN−TO−

SOURCE AVALANCHE ENERGY (mJ)

25 50 75 100 125 150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

175

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Page 5

NTMFS5844NL, NVMFS5844NL

TYPICAL CHARACTERISTICS

100

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

JA(t)

0.01

Single Pulse

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100

PULSE TIME (sec)

Figure 13. Thermal Response

DEVICE ORDERING INFORMATION

Device Marking Package Shipping

NTMFS5844NLT1G 5844NL DFN5

(Pb−Free)

NVMFS5844NLT1G V5844L DFN5

(Pb−Free)

NVMFS5844NLWFT1G 5844LW DFN5

(Pb−Free)

NVMFS5844NLT3G V5844L DFN5

(Pb−Free)

NVMFS5844NLWFT3G 5844LW DFN5

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

1500 / Tape & Reel

5000 / Tape & Reel

†

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Page 6

DFN5 5x6, 1.27P

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

2 X

0.20 C

0.10 C

0.05

PIN 5

(EXPOSED PAD)

1234

TOP VIEW

SIDE VIEW

A0.10 B

BOTTOM VIEW

DETAIL A

e/2 e

0.475

2 X

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

4 X

DETAIL A

RECOMMENDED

SOLDERING FOOTPRINT*

4.5600.495

1.530

SEATING

PLANE

3.200

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

MILLIMETERS

A 0.90 1.00

A1 0.00 −−−

b 0.33 0.41 c 0.23 0.28 D 5.15

5.00 5.30

D1 4.70 4.90 D2 3.80 4.00

E 6.15

6.00 6.30

E1 5.70 5.90 E2 3.45 3.65

e 1.27 BSC G 0.51 0.575 K 1.20 1.35 L 0.51 0.575

L1 0.125 REF

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80 12

GENERIC

MARKING DIAGRAM*

XXXXXX

AYWZZ

XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some product may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

0.905

0.965

1.000

0.750

DIMENSIONS: MILLIMETERS

1.330

1.270 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON14036D DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor NTMFS5844NL, NVMFS5844NL User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual