ON Semiconductor NVMFS5113PL User Manual
NVMFS5113PL
MOSFET – Power, Single
P-Channel
-60 V, 14 mW, -64 A
Features
• Low R
• High Current Capability
• Avalanche Energy Specified
• NVMFS5113PLWF − Wettable Flanks Product
• NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain Current R
q
JC
Power Dissipation R
(Notes 1, 2)
Continuous Drain Current R
q
JA
Power Dissipation R
(Notes 1, 2)
Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T
Source Current (Body Diode) I
Single Pulse Drain−to−Source Avalanche
Energy (T
= 46 A, L = 0.3 mH, RG = 25 W)
I
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Junction−to−Case − Steady State (Drain)
(Note 2)
Junction−to−Ambient − Steady State (Note 2)
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
to Minimize Conduction Losses
DS(on)
= 25°C unless otherwise noted)
J
Parameter
(Notes 1, 2, 3)
(Notes 1, 2, 3)
= 25°C, VDD = 50 V, VGS = 10 V,
J
Parameter Symbol Value Unit
q
JC
q
JA
Steady
State
Steady
State
TA = 25°C, t
TC = 25°C
TC = 100°C −45
TC = 25°C
TC = 100°C 75
TA = 25°C
TA = 100°C −7
TA = 25°C
TA = 100°C 1.9
= 10 ms
p
Symbol Value Unit
DSS
GS
I
D
P
D
I
D
P
D
I
DM
stg
S
E
AS
T
L
R
q
JC
R
q
JA
2
, 2 oz. Cu pad.
−60 V
"20 V
−64
150
−10
3.8
−415 A
−55 to
175
−150 A
315 mJ
260 °C
1.0 °C/W
39 °C/W
A
W
A
W
°C
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V
(BR)DSS
−60 V
S (1, 2, 3)
G (4)
R
DS(on)
14 mW @ −10 V
22 mW @ −4.5 V
D (5, 6)
I
D
−64 A
P−Channel
MARKING
DIAGRAM
D
1
DFN5
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
S
S
G
XXXXXX
AYWZZ
D
D
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2019 − Rev. 3
1 Publication Order Number:
NVMFS5113PL/D
NVMFS5113PL
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise noted)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
(BR)DSS
DSS
GSS
VGS = 0 V, ID = −250 mA
VGS = 0 V,
V
= −60 V
DS
TJ = 25°C −1.0 mA
TJ = 125°C −100
VDS = 0 V, VGS = "20 V "100 nA
−60 V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain−to−Source On Resistance R
V
GS(TH)
DS(on)
VGS = VDS, ID = −250 mA
VGS = −10 V, ID = −17 A 10.5 14 mW
−1.5 −2.5 V
VGS = −4.5 V, ID = −5 A 16 22
Froward Transconductance g
FS
VDS = −15 V, ID = −15 A 43 S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
Plateau Voltage V
C
iss
oss
rss
G(TOT)
G(TH)
GS
GD
GP
VGS = 0 V, f = 1.0 MHz,
V
= −25 V
DS
VDS = −48 V,
I
= −17 A
D
VGS = −4.5 V 45
VGS = −10 V 83
VGS = −10 V, VDS = −48 V,
I
= −17 A
D
4400
505
319
4
13
27
3.5 V
pF
nC
SWITCHING CHARACTERISTICS (Notes 4)
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
Fall Time t
d(on)
r
d(off)
f
VGS = −10 V, VDS = −48 V,
= −17 A, RG = 2.5 W
I
D
15
37
54
77
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q
V
SD
RR
a
b
RR
VGS = 0 V,
I
= −17 A
S
TJ = 25°C −0.79 −1.0
TJ = 125°C −0.65
VGS = 0 V, dls/dt = 100 A/ms,
I
= −17 A
s
41
ns
22
19
50 nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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NVMFS5113PL
TYPICAL CHARACTERISTICS
60.0
50.0
−6 V to −10 V
40.0
30.0
20.0
, DRAIN CURRENT (A)
D
−I
10.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = −2.8 V
Figure 1. On−Region Characteristics
0.020
0.018
0.016
0.014
TJ = 25°C
−4.0 V
−3.6 V
−3.2 V
ID = −17 A
= 25°C
T
J
120.0
110.0
100.0
, DRAIN CURRENT (A)
D
−I
VDS = −10 V
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
123456
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
TJ = 125°C
TJ = −55°C
Figure 2. Transfer Characteristics
0.050
TJ = 25°C
0.045
0.040
0.035
0.030
0.025
VGS = −4.5 V
0.012
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
DS(on)
R
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.10
VGS = −10 V
2.00
1.90
1.80
1.70
1.60
1.50
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
DS(on)
R
= −17 A
I
D
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
0.020
0.015
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
0 102030405060708090100
DS(on)
R
−ID, DRAIN CURRENT (A)
VGS = −10 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
10000
, LEAKAGE (nA)
DSS
−I
VGS = 0 V
TJ = 150°C
TJ = 125°C
1000
100
10 20 30 40 50 60
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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