ON Semiconductor NVMFS5113PL User Manual

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Page 1

NVMFS5113PL

MOSFET – Power, Single

P-Channel

-60 V, 14 mW, -64 A

Features

• Low R

• High Current Capability

• Avalanche Energy Specified

• NVMFS5113PLWF − Wettable Flanks Product

• NVM Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current R

Power Dissipation R (Notes 1, 2)

Continuous Drain Current R

Power Dissipation R (Notes 1, 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (T

= 46 A, L = 0.3 mH, RG = 25 W)

L(pk)

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Junction−to−Case − Steady State (Drain)

(Note 2)

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

to Minimize Conduction Losses

DS(on)

= 25°C unless otherwise noted)

Parameter

(Notes 1, 2, 3)

= 25°C, VDD = 50 V, VGS = 10 V,

Parameter Symbol Value Unit

Steady

State

Steady

State

TA = 25°C, t

TC = 25°C

TC = 100°C −45

TC = 25°C

TC = 100°C 75

TA = 25°C

TA = 100°C −7

TA = 25°C

TA = 100°C 1.9

= 10 ms

Symbol Value Unit

DSS

stg

, 2 oz. Cu pad.

−60 V

"20 V

−64

150

−10

3.8

−415 A

−55 to

175

−150 A

315 mJ

260 °C

1.0 °C/W

39 °C/W

°C

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(BR)DSS

−60 V

S (1, 2, 3)

G (4)

DS(on)

14 mW @ −10 V

22 mW @ −4.5 V

D (5, 6)

−64 A

P−Channel

MARKING DIAGRAM

DFN5

CASE 488AA

STYLE 1

A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

S S S

XXXXXX

AYWZZ

ORDERING INFORMATION

See detailed ordering, marking and shipping information on page 5 of this data sheet.

July, 2019 − Rev. 3

1 Publication Order Number:

NVMFS5113PL/D

Page 2

NVMFS5113PL

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V, ID = −250 mA

VGS = 0 V,

= −60 V

TJ = 25°C −1.0 mA

TJ = 125°C −100

VDS = 0 V, VGS = "20 V "100 nA

−60 V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Drain−to−Source On Resistance R

GS(TH)

DS(on)

VGS = VDS, ID = −250 mA

VGS = −10 V, ID = −17 A 10.5 14 mW

−1.5 −2.5 V

VGS = −4.5 V, ID = −5 A 16 22

Froward Transconductance g

VDS = −15 V, ID = −15 A 43 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Plateau Voltage V

iss

oss

rss

G(TOT)

G(TH)

VGS = 0 V, f = 1.0 MHz,

= −25 V

VDS = −48 V,

= −17 A

VGS = −4.5 V 45

VGS = −10 V 83

VGS = −10 V, VDS = −48 V,

= −17 A

4400

505

319

3.5 V

SWITCHING CHARACTERISTICS (Notes 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(on)

d(off)

VGS = −10 V, VDS = −48 V,

= −17 A, RG = 2.5 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V, I

= −17 A

TJ = 25°C −0.79 −1.0

TJ = 125°C −0.65

VGS = 0 V, dls/dt = 100 A/ms,

= −17 A

50 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

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Page 3

NVMFS5113PL

TYPICAL CHARACTERISTICS

60.0

50.0

−6 V to −10 V

40.0

30.0

20.0

, DRAIN CURRENT (A)

−I

10.0

0.0

0.0 1.0 2.0 3.0 4.0 5.0

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = −2.8 V

Figure 1. On−Region Characteristics

0.020

0.018

0.016

0.014

TJ = 25°C

−4.0 V

−3.6 V

−3.2 V

ID = −17 A

= 25°C

120.0

110.0

100.0

, DRAIN CURRENT (A)

−I

VDS = −10 V

90.0

80.0

70.0

60.0

50.0

40.0

30.0

20.0

10.0

0.0 123456

−VGS, GATE−TO−SOURCE VOLTAGE (V)

TJ = 25°C

TJ = 125°C

TJ = −55°C

Figure 2. Transfer Characteristics

0.050 TJ = 25°C

0.045

0.040

0.035

0.030

0.025

VGS = −4.5 V

0.012

, DRAIN−TO−SOURCE RESISTANCE (W)

0.010

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0

DS(on)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

2.10 VGS = −10 V

2.00

1.90

1.80

1.70

1.60

1.50

1.40

1.30

1.20

1.10

1.00

0.90

0.80

0.70

0.60

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

= −17 A

−50 −25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.020

0.015

, DRAIN−TO−SOURCE RESISTANCE (W)

0.010 0 102030405060708090100

DS(on)

−ID, DRAIN CURRENT (A)

VGS = −10 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

100000

10000

, LEAKAGE (nA)

DSS

−I

VGS = 0 V

TJ = 150°C

TJ = 125°C

1000

100

10 20 30 40 50 60

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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Page 4

NVMFS5113PL

TYPICAL CHARACTERISTICS

6000

VGS = 0 V

5000

iss

TJ = 25°C f = 1 MHz

4000

3000

2000

C, CAPACITANCE (pF)

1000

oss

rss

0 102030405060

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1000.0

100.0

t, TIME (ns)

10.0

VDD = −48 V

= −10 V

= −17 A

1.0

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

d(off)

d(on)

10.0

9.0

8.0

7.0

6.0 Q

5.0

4.0

3.0

2.0

, GATE−TO−SOURCE VOLTAGE (V)

1.0

0.0

0 102030405060708090

VDS = −48 A

= −17 A

= 25°C

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage vs. Total

Charge

120

VGS = 0 V

110

100

= 25°C

, SOURCE CURRENT (A)

−I 10

0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.901.00

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

1000

100

VGS ≤ −10 V Single Pulse TC = 25°C

10 ms

100 ms

1 ms

10 ms

, DRAIN CURRENT (A)

0.1

−I

DS(on)

Limit Thermal Limit Package Limit

0.01

0.1 1 10 100

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

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100

= 25°C

J(initial)

= 125°C

, DRAIN CURRENT (A)

PEAK

1.00E−05 1.00E−02

1.00E−04 1.00E−03

TAV, TIME IN AVALANCHE (s)

Figure 12. Avalanche Characteristics

Page 5

NVMFS5113PL

TYPICAL CHARACTERISTICS

100

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

THERMAL RESISTANCE

(°C/W) EFFECTIVE TRANSIENT

JA(t)

0.01

DEVICE ORDERING INFORMATION

NVMFS5113PLT1G V5113L DFN5

NVMFS5113PLWFT1G 5113LW DFN5

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Single Pulse

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

PULSE TIME (sec)

Figure 13. Thermal Response

Device Marking Package Shipping

1500 / Tape & Reel

(Pb−Free)

1500 / Tape & Reel

(Pb−Free)

†

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Page 6

DFN5 5x6, 1.27P

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 2:1

2 X

0.20 C

0.10 C

0.05

PIN 5

(EXPOSED PAD)

1234

TOP VIEW

SIDE VIEW

A0.10 B

BOTTOM VIEW

DETAIL A

e/2

0.475

2 X

SOLDERING FOOTPRINT*

(SO−8FL)

CASE 488AA

ISSUE N

0.20 C

DETAIL A

RECOMMENDED

4.5600.495

1.530

4 X

SEATING

3.200

PLANE

DATE 25 JUN 201

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM MIN NOM

A1 0.00 −−−

D1 4.70 4.90 D2 3.80 4.00

E1 5.70 5.90 E2 3.45 3.65

L1 0.125 REF

MILLIMETERS

A 0.90 1.00 b 0.33 0.41

c 0.23 0.28 D 5.15

5.00 5.30

E 6.15

6.00 6.30

e 1.27 BSC G 0.51 0.575 K 1.20 1.35 L 0.51 0.575

M 3.00 3.40

q 0 −−−

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

3.80 12

GENERIC

MARKING DIAGRAM*

XXXXXX

AYWZZ

XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability

*This information is generic. Please refer to

device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some product may not follow the Generic Marking.

4.530

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

0.905

0.965

1.000

0.750

DIMENSIONS: MILLIMETERS

1.330

1.270 PITCH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:

DESCRIPTION:

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

98AON14036D DFN5 5x6, 1.27P (SO−8FL)

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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ON Semiconductor NVMFS5113PL User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual