ON Semiconductor NVMFS4C01N User Manual

NVMFS4C01N

MOSFET – Power, Single

N-Channel, Logic Level
SO-8FL

30 V, 0.67 mW, 370 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

• Low Q

• NVMFS4C01NWF − Wettable Flanks Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

to Minimize Conduction Losses

DS(on)

and Capacitance to Minimize Driver Losses

G

V

(BR)DSS

30 V

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R

MAX ID MAX

DS(ON)

0.67 mW @ 10 V

0.95 mW @ 4.5 V

D (5)

370 A

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Cur­rent R

Power Dissipation
R

Continuous Drain Cur­rent R

3)

Power Dissipation
R

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche
Energy (I

Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

(Notes 1, 3)

q

JC

(Notes 1, 3)

q

JC

(Notes 1, 2,

q

JA

(Notes 1, 2, 3)

q

JA

L(pk)

= 35 A)

= 25°C unless otherwise noted)

J

Symbol Value Unit

TC = 25°C I

Steady

State

Steady

State

TA = 25°C, t

TC = 25°C P

TA = 25°C I

TA = 25°C P

= 10 ms

p

I

E

DSS

GS

D

D

D

D

DM

S

AS

T

L

stg

30 V

"20 V

370 A

161 W

57 A

3.84 W

900 A

−55 to
175

110 A

862 mJ

260 °C

°C

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

Symbol Value Unit

°C/W

JC

JA

0.93

39

R

q

R

q

2

, 2 oz. Cu pad.

G (4)

S (1,2,3)

N−CHANNEL MOSFET

MARKING
DIAGRAM

D

1

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

4C01N = Specific Device Code for

NVMFS4C01N

4C01WF= Specific Device Code of

NVMFS4C01NWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty

S
S

4C01xx

S

AYWZZ

G

D

ORDERING INFORMATION

Device Package Shipping

NVMFS4C01NT1G SO−8 FL

(Pb−Free)

NVMFS4C01NT3G SO−8 FL

(Pb−Free)

NVMFS4C01NWFT1G SO−8 FL

(Pb−Free)

NVMFS4C01NWFT3G SO−8 FL

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1500 /

Tape & Reel

5000 /

Tape & Reel

1500 /

Tape & Reel

5000 /

Tape & Reel

D

D

†

© Semiconductor Components Industries, LLC, 2016

July, 2019− Rev. 2

1 Publication Order Number:

NVMFS4C01N/D

NVMFS4C01N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

V

V

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS

T

J

DSS

GSS

VGS = 0 V, ID = 250 mA

/

VGS = 0 V,

V

= 24 V

DS

TJ = 25 °C 1

TJ = 125°C 100

VDS = 0 V, VGS = 20 V 100 nA

30 V

16.3
mV/°C

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

V

GS(TH)

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

Gate Resistance R

DS(on)

FS

G

VGS = VDS, ID = 250 mA

VGS = 10 V ID = 30 A 0.56 0.67

VGS = 4.5 V ID = 30 A 0.76 0.95

VDS = 3 V, ID = 30 A 183 S

TA = 25 °C 1.0

1.3 2.2 V

5.8 mV/°C

mW

W

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS = 0 V, f = 1 MHz, VDS = 15 V

VGS = 4.5 V, VDS = 15 V; ID = 30 A

VGS = 10 V, VDS = 15 V,

I

= 30 A

D

10144

5073

148

63

18

29

13

139

pF

nC

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

t

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

r

f

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

= 3.0 W

R

G

29

68

53

36

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS = 0 V,

I

= 10 A

S

VGS = 0 V, dIS/dt = 100 A/ms,

I

= 30 A

S

TJ = 25°C 0.73 1.1

TJ = 125°C 0.55

87

43

44

147 nC

V

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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2

NVMFS4C01N

TYPICAL CHARACTERISTICS

400

10 V

350

300

250

200

150

100

, DRAIN CURRENT (A)

D

I

50

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

3.6 V

4.5 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

3.4 V

3.2 V

3.0 V

2.8 V

VGS = 2.6 V

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

, DRAIN−TO−SOURCE RESISTANCE (mW)

0.5
345678910

DS(on)

R

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

ID = 30 A

TJ = 25°C

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

400

350

300

250

200

150

100

, DRAIN CURRENT (A)

D

I

, DRAIN−TO−SOURCE RESISTANCE (mW)

DS(on)

R

VDS = 3 V

TJ = 25°C

TJ = 150°C

50

0

1.5 2 2.5 3 3.5 4

1.5
TJ = 25°C

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0 50 100 150 200 250 300 350 400

TJ = −55°C

VGS = 4.5 V

VGS = 10 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

, NORMALIZED DRAIN−TO−

SOURCE RESISTANCE (W)

DS(on)

R

1.8

1.6

1.4

1.2

1.0

0.8

0.6

VGS = 10 V

= 30 A

I

D

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

150

1251007550250−25−50

175

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100000

10000

1000

, LEAKAGE (nA)

DSS

I

100

10

0 5 10 15 20 25 30

3

TJ = 125°C

TJ = 100°C

TJ = 85°C

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage